• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.190-190
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• 2010

본 연구에서는 Ti이 도핑된 ZnO의 성장 및 후처리 과정에 따른 구조적, 전기적, 자기적 특성에 관하여 보고한다. ZnTiO 박막은 Pt/SiO2/Si기판에 $500^{\circ}C$, 20 mTorr에서 RF 마그네트론 스퍼터법과 DC 마그네트론 스퍼터법으로 코스퍼터링을 통하여 증착 하였다. 그리고 박막 성장 후 질소분위기에서 $600{\sim}900^{\circ}C$($50^{\circ}$ step)에서 급속 열처리 공정(RTA)을 이용하여 후열처리에 따른 특성변화를 관찰하였다. 구조적 특성변화를 확인하기 위하여 XRD 측정을 하였으며, Ti이 Zn와 치환되어 성장 한 것을 관측하였다. 한편 자기적 특성 확인을 위한 SQUID 측정 결과, ZnTiO 박막에서 강자성 특성인 자기-이력곡선을 확인하였다. 또한 강유전 특성 분석을 위한 I-V 측정에서 ZnTiO 박막에서 강유전 특성인 전류-이력 현상을 관측하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.449-451
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• 2001

This study presents a study on modified algorithm to operating train simulation of AT feeding systems. In this study equivalent impedance is constructed by $Z_c,\;Z_r,\;Z_f,\;Z_{cr},\;Z_{rf},\;Z_{fc}$. The train current flows through the all auto-transformer corresponding to track impedance. To calculate train voltage from analyzing the railway systems, the algorithm is based on the K. C. L, K. V. L, superposition and circuit separation method. Multi-train's voltages are determined by calculating the catenary voltage at each train's position and adding up these train's voltage drop. Case studies use a field operational data, show that the proposed method is easily applied.

• 반도체디스플레이기술학회지
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• 제16권1호
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• pp.70-74
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• 2017

To research the electrical properties of ZnS thin films with various annealing conditions, ZnS was prepared by RF magnetron sputtering system and annealed in a vacuum for 10 minutes. All films were analyzed by the XRD, PL and I-V measurement system. The XRD pattern of ZnS film annealed at $100^{\circ}C$ was shifted to lower 2 theta because of the formation of a depletion region at the interface between a substrate and ZnS thin film, and the capacitance was abruptly increased. However, the pattern of XRD of ZnS film annealed at $100^{\circ}C$ with a Schottky contact was showed the amorphous structure, and the current-voltage characteristics were non-linearly observed by the Schottky contact.

• 한국컴퓨터정보학회:학술대회논문집
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• 한국컴퓨터정보학회 2017년도 제56차 하계학술대회논문집 25권2호
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• pp.131-132
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• 2017

본 연구에서는 열처리 온도에 따른 전도 특성을 조사하기 위하여 RF magnetron sputtering을 이용해서 Si기판 위에 SBN 박막을 증착시킨 후, SBN 박막에 $650{\sim}800[^{\circ}C]$의 온도 범위에서 열처리를 하였다. $650[^{\circ}C]$에서 열처리된 박막의 경우 표면 거칠기는 약 0.42[nm]로 나타났으며, -5~+5[V]의 전압 범위에서 누설전류밀도는 $10-5[A/cm^2]$ 이하로 안정된 값을 나타내었다.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권9호
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• pp.527-532
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with dc bias voltage of -10V showed lower discharge voltage and lower erosion rate byion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardement during deposition process.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2004년도 춘계학술대회
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• pp.62-64
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• 2004

초고속 RF IC의 핵심소자인 SiGe에피텍시층을 가진 이종양극트란지스터 (hetero junction bipolar transistor: HBT)를 0.35um급 CMOS공정으로 제작하였다. 이때 IOW $V_{BE}$영역에서의 Current Gain의 선형성을 향상시키기 위하여 Capping 실리콘의 두께를 200과 300${\AA}$으로 나누고 EDR (Emitter Drive-in RTA)의 온도와 시간을 900$\~$1000C, 0$\~$30sec로 각각 변화시키면서 최적조건을 알아보았다. 실험범위 내에서의 최적공정조건은 300${\AA}$의 capping 실리콘과 975C-30sec의 EDR조건이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.218.2-218.2
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• 2013

In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.

• Journal of Magnetics
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• 제10권3호
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• pp.99-102
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• 2005

Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.556-558
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• 1996

PLS 2-GeV linac has 11 sets of high power klystron-modulator system as a main RF source for the beam acceleration. The modulators can provide 200-MW peak pulsed power(400-kV, 500-A) with a pulse width of $7.5{\mu}s$(ESW), a maximum pulse repetition rate of 120-Hz at the full power level. The DC power supply provides a 25-kV, 7-Adc and the charging system consists of a charging inductor, charging capacitor, and the diode for reverse current protection. The charged PFN voltage by a LC resonant charging method has two times of the DC high voltage and the pulsed power is delivered to the load by a thyratron switch. To reduced the press of high voltage lit thyratron switch, the command charging is the best method. In this article, the high voltage switch for the command charging method is tested to the start work and the system is presented with the experiment results of the trigger and operational characteristics.