Proceedings of the KAIS Fall Conference (한국산학기술학회:학술대회논문집)
- 2004.06a
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- Pages.62-64
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- 2004
Current Gain Enhancement in SiGe HBTs
SiGe HBT의 Current Gain특성 개선
- Song Ohsung (Dept of Materials Science and Eng., The University of Seoul) ;
- Yi Sandon (Dept of Materials Science and Eng., The University of Seoul) ;
- Kim Dugjoong (Dept of Materials Science and Eng., The University of Seoul)
- Published : 2004.06.01
Abstract
초고속 RF IC의 핵심소자인 SiGe에피텍시층을 가진 이종양극트란지스터 (hetero junction bipolar transistor: HBT)를 0.35um급 CMOS공정으로 제작하였다. 이때 IOW
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