• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.48-48
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• 2009

최근 빠른 동작속도와 고 집적도를 얻기 위해 metal oxide semiconductor field effect transistor (MOSFET) 의 크기는 계속 해서 줄어들고 있다. 동시에 게이트의 절연층도 얇아지게 된다. 절연층으로 사용되는 $SiO_2$ 의 두께가 2nm 이하로 얇아 지게 되면 터널링에 의해 누설 전류가 발생하게 된다. 이 문제를 해결하기 위해 $SiO_2$ 를 대체할 고유전체 물질의 연구가 활발하다. 고유전체 물질 중에는 $ZrO_2,\;Al_2O_3,\;HfO_2$ 등이 많이 연구 되어 왔다. 하지만 유전상수 이외에 band gap energy, thermodynamic stability, recrystallization temperature 등의 특성이 좋지 않아 대체 물질로 문제점이 있다. 이를 보안하기 위해 산화물을 합금과 결합시키면 서로의 장점들이 합쳐져 기준들을 만족하는 물질을 만들 수 있고 $HfAlO_3$가 그 중 하나이다. Al를 첨가하는 이유는 문턱전압을 낮추기 위해서다. $HfAlO_3$는 유전상수 18.2, band gap energy 6.5 eV, recrystallization temperature 800 $^{\circ}C$이고 열역학적 특성이 안정적이다. 게이트 절연층은 전극과 기판사이에 적층구조를 이루고 있어 이방성인 드라이 에칭이 필요하고 공정 중 마스크물질과의 선택비가 높아야한다. 본 연구는 $HfAlO_3$박막을 $BCl_3/Ar,\;N_2/BCl_3/Ar$ 유도결합 플라즈마를 이용해 식각했다. 베이스 조건은 RF Power 500 W, DC-bias -100 V, 공정압력 15 mTorr, 기판온도 40 $^{\circ}C$ 이다. 가스비율, RF Power, DC-bias, 공정 압력에 의한 마스크물질과 의 선택비를 알아보았다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.2
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• pp.63-68
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• 2005

Total 12 units of high power klystron-modulator systems as microwave source are under operation for 2.5 GeV electron linear accelerator in Pohang Light Source (PLS) linac. The klystron-modulator system has an important role for the stable operation to improve an availability statistics of overall system performance of klystron-modulator system. RF power and beam power of klystron are precisely measured for the effective control of electron beam. A precise measurement and measurement equipment with good response characteristics are demanded for this. Input power of klystron is calculated from the applied voltage and the current on its cathode. Tiny measurement error severely effects RF output power value of klystron. Therefore, special care is needed to measure precise beam voltage. Capacitive voltage divider (CVD), which divides input voltage as capacitance ratio, is intended for the measurement of a beam voltage of 400 kV generated from the klystron-modulator system. Main parameter to determine standard capacitance in the high arm of CVD is dielectric constant of insulation oil. Therefore CVD should be designed to have a minimum capacitance variation due to voltage, frequency and temperature in the measurement range. This paper will be present and discuss the design concept and analysis of capacitive voltage divider for a pulsed high-voltage measurement, and the empirical relations between capacitance effects and oil temperature variation.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.300-305
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• 1998

Crystallinity and structual properties of the epitaxially grown Pt films on $Al_2O_3$(0001) substrate by rf magnetron sputtering at a substrate temperature of $600^{\circ}C$ were studied by using backscattering spectrometry (BS)/channeling and transmission electron microscopy (TEM) measurements. $MeV^4$He ion BS/channeling results showed that the channeling minimum yield of Pt film with a thickness of 3500$\AA$ was 4%. This indicates an excellent crystallinity of Pt film. When the thickness of Pt film was less than 200 $\AA$, the channeling minimum yield of Pt film increased sharply with the decrease in film thickness. The Pt layer on $Al_2O_3$(0001) substrate grew epitaxially to the direction of (111) with six-fold symmetry. Cross-sectional TEM images also showed that Pt film on $Al_2O_3$(0001) substrate consist of twinned domains to release the strain induced by the lattice mismatch and the surface roughness of the film increased at the twin boundaries where the strain was contcentrated.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1645-1647
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• 1996

Polycrystalline CdTe thin films -have been studied for photovoltaic application because of their high absorption coefficient and optimal band gap energy (1.54 eV) for solar energy conversion. In this study, we prepared CdTe films using RF-magnetron sputtering method and investigated structural, optical and electrical properties with spectrophotometer, XRD, EDX, and resistivity meter. CdTe films at $200\;^{\circ}C$ showed a mixture of zinc blend (Cubic) and wurtzite (hexagonal) phase. On the other hand, the films at $400\;^{\circ}C$ showed highly oriented structure having hexagonal structure. The resistivity of CdTe films deposited on $SiO_2$ substrates was about $10_7\;{\Omega}cm$. The value of resistivity decreased with the increase of the substrate temperature. CdTe were sputtered on CdS thin films prepared by chemical bath deposition for the formation of the heterojunction. I-V characteristics of these cells were measured at a light density of $100mw/cm^2$, AM. 1.0. The present thin film solar cells showed a conversion efficiency of about 5%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.329-334
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• 2008

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.11
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• pp.1176-1183
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• 2003

In this paper, miniature voltage-controlled oscillator(VCO) for 1.6 ㎓ PCS band is designed and implemented using the LTCC technique. Circuit level design using commercial components is performed, and passive L, C elements embedded in LTCC substrate is optimized by simulation tools. Embedded passive components are modeled into equivalent circuits and their circuit parameters are extracted for circuit simulation. Utilizing the designed embedded passive elements and 21 layers LTCC substrate, VCO with 4.0${\times}$4.0${\times}$1.6 ㎣ dimensions is designed and fabricated. Developed VCO operates in 2.7 V with 8.5 ㎃ current consumption. The phase noise performance of VCO is below -112.61 ㏈c/㎐ at 100 ㎑ offset and harmonic suppression characteristics is measured above -30 ㏈.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1502-1504
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• 2003

최근 전자기기의 경박단소화 추세는 전자기기의 크기와 가격의 감소를 이끌었으며 이러한 추세는 앞으로 지속될 것이다. 이와 같은 현상으로 전자기기를 구성하는 요소의 절반이상을 차지하는 단위수동소자의 경우 소형화를 넘어 박막화 및 집적화가 절실히 요구되는 실정이다. 따라서 본 연구에서는 현재 GHz 대역의 휴대용 무선통신 송 수신부 등에 사용되고 있는 기판이 $Al_2O_3$ 기판인 점을 고려하여 기판의 공통화를 위해 $Al_2O_3$ 기판 위에 Ta/$Ta_2O_5$/Ta 구조를 갖는 MIM 박막커패시터를 제작하여 그 특성을 고찰하였다. 모든 박막의 증착은 RF-magnetron reactive sputtering법에 의해 이루어졌으며, 유전체 열처리는 $700^{\circ}C$ 진공상태에서 60 sec 동안 수행하였다. XRD 분석결과, as-deposited $Ta_2O_5$ 박막은 열처리 후에 비정질상에서 결정질상으로 변환되었다. Ta/$Ta_2O_5$/Ta/Ti/$Al_2O_3$ 커패시터의 전기적 특성으로는 C-F, C-V, I-V 를 측정하였다.

• Microbiology and Biotechnology Letters
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• v.8 no.4
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• pp.237-245
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• 1980

Microorganisms growing on Dried-Persimmon have heed isolated ana identified. Fluorescent substance were extracted from a putrefactive Dried-Persimmon after invaded Toxigenic Fungi, and compared with Aflatoxin by Thin layer chromatography and u. v. absorption spectra. The results obtained were summarized as follows: 1) Fungal invasion was frequently appeared at the beginning of storage, and after then Bacteria invasion was followed. 2) Several Genera of microorganisms (Aspergillus sp., Escherichia sp., Mucor sp., Alternaria sp., Penicillium sp. ) were observed in Dried-persimmon during storage. Aspergillus sp., one of all Genus was predominant. 3) Two strains (Aspergillus flavus Group, Penicillium citrimum Series) of 6 Fungi had Fluorescent substance, which was presumed Aflatoxin-like substance. 4) The Rf value of T. L. C. ana λ max of u. v. absorption spectra showed the same value as the standard of Aflatoxin. It is suppose that the Fluorescent substance in Dried-Persimmon is a Aflatoxin-like substance.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1446-1449
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• 1996

Thin films of diamond-like carbon(DLC) have been deposited using a magnetron plasma-enhanced chemical vapor deposition(PECVD) method with an rf(13.56 MHz) plasma of $C_{3}H_{8}$. From the Langmuir probe I-V characteristics, it can be observed that increasing the magnetic field yields an increase of the temperature($T_e$) and density($N_e$) of electron. At a magnetic field of 82 Gauss, the estimated values of $T_e$ and $N_e$ are approximately $1.5\;{\times}\;10^5$ K(13.5 eV) and $1.3\;{\times}\;10^{11}\;cm^{-3}$, respectively. Such a highly dense plasma can be attributed to the enhanced ionization caused by the cyclotron motion of electrons in the presence of a magnetic field. On the other hand, the negative dc self-bias voltage($-V_{sb}$) decreases with an increasing magnetic field, which is irrespective of gas pressure in the range of $1{\sim}7$ mTorr. This result is well explained by a theoretical model considering the variation of $T_e$. Deposition rates of DLC films increases with a magnetic field. This may be due to the increased mean free path of electrons in the magnetron plasma. Structures of DLC films are examined by using various techniques such as FTIR and Raman spectroscopy. Most of hydrocarbon bonds in DLC films prepared consist of $sp^3$ tetrahedral bonds. Increasing the rf power leads to an enhancement of cross-linking of carbon atoms in DLC films. At approximately 140 W, the maximum film density obtained is about 2.4 $g/cm^3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.73-73
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• 2008

일반적으로 청색 및 자외선 발광다이오드, 레이저 다이오드, UV 감지기 (detector)소자 등의 기술적인 중요성은 ZnO를 기반으로 하는 산화물 반도체와 함께 와이드 밴드갭 반도체 연구가 활발히 진행되고 있다. ZnO의 경우 밴드갭 엔지니어링을 위해 일반적으로 Cd과 Mg을 사용하고 있으며 특히, ZnO에 Mg을 첨가하여 MgZnO 화합물을 첨가할 경우 밴드갭을 3.3eV~7.8eV까지 증가 시킬 수 있고, MgZnO/ZnO 초격자 구조를 이용할 경우 자유 엑시톤 결합에너지를 100meV 이상까지 증가시킬 수 있는 장점을 가지고 있다. 그러나 MgO는 결정구조가 rocksalt 구조를 가지는 입방정 구조이기 때문에 Hexagonal 구조를 가진 ZnO에 첨가될 경우 고용도에 큰 제한을 가지게 된다. 이와 같은 문제점으로 인하여 밴드갭 엔지니어링 기술은 여전히 해결되지 않은 문제점으로 남아 있다. 본 실험에서는 RF 마그네트론 스퍼터링 방법으로 사파이어 기판위에 MgZnO/ZnO 박막을 co-sputtering 시켰다. Targer은 ZnO(99.999%) 와 MgO (99.999%) target을 사용하였고, 스퍼터링 가스는 아르곤과 산소가스를 2:1 비율로 혼합시켜 성장하였다. MgZnO 박막을 성장하기 전 ZnO 층을 ~500 두께로 성장 시켰다. RF-power는 ZnO target을 고정 시키고, MgO targe power를 변화시켜 Mg 농도를 조절 하였다. 실험 결과 MgO target power 가 증가 할수록 반치폭이 증가하고, c-plane을 따라 격자 상수가 감소하는 것을 확인 할 수 있고, UV emission peak intensity가 감소며 단파장쪽으로 blue shift 하고, activation energy 가 증가하는 것을 관찰 할 수 있었다.