Fabrication of CdTe thin films by sputtering and its application on CdTe/CdS solar cells

Sputtering에 의한 CdTe박막제조 및 CdTe/CdS태양전지에의 응용

  • Jung, H.W. (In-Ha Univ. Dept. of Electrical Eng.) ;
  • Lee, C. (In-Ha Univ. Dept. of Electrical Eng.) ;
  • Kim, S. (National Institute of Technology and Quality) ;
  • Shin, S.H. (National Institute of Technology and Quality) ;
  • Park, K.J. (National Institute of Technology and Quality)
  • 정해원 (인하대학교 전기공학과) ;
  • 이천 (인하대학교 전기공학과) ;
  • 김신 (국립기술품질원 무기화학과) ;
  • 신성호 (국립기술품질원 무기화학과) ;
  • 박광자 (국립기술품질원 무기화학과)
  • Published : 1996.07.22

Abstract

Polycrystalline CdTe thin films -have been studied for photovoltaic application because of their high absorption coefficient and optimal band gap energy (1.54 eV) for solar energy conversion. In this study, we prepared CdTe films using RF-magnetron sputtering method and investigated structural, optical and electrical properties with spectrophotometer, XRD, EDX, and resistivity meter. CdTe films at $200\;^{\circ}C$ showed a mixture of zinc blend (Cubic) and wurtzite (hexagonal) phase. On the other hand, the films at $400\;^{\circ}C$ showed highly oriented structure having hexagonal structure. The resistivity of CdTe films deposited on $SiO_2$ substrates was about $10_7\;{\Omega}cm$. The value of resistivity decreased with the increase of the substrate temperature. CdTe were sputtered on CdS thin films prepared by chemical bath deposition for the formation of the heterojunction. I-V characteristics of these cells were measured at a light density of $100mw/cm^2$, AM. 1.0. The present thin film solar cells showed a conversion efficiency of about 5%.

Keywords