• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.178.1-178.1
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• 2014

본 연구에서는 RF스퍼터링법에 의하여 유리기판에 NiO를 40 nm만큼 증착시킨후, 30분 동안 각각 상온, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$로 후 열처리 하였다. 박막의 전자적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy)와 UV-Spectrometer를 이용하여 =측정하였고, Hall Effect를 이용하여 전기적 특성을 측정하였다. XPS측정결과, $400^{\circ}C$ 후 열처리 한 NiO박막은 NiO 결합인 Ni2+가 줄어 들면서 금속 결합인 Ni0가 증가하면, 상온에서 띠틈이 4.0eV, 3.4eV로 줄어드는 것을 REELS로 확인 했다. 이 값은 UV-Spectrometer를 이용한 광학적 띠틈과 같음을 보였다. Hall Effect측정 결과 $400^{\circ}C$ 후 열처리한 샘플에서 P-type에서 N-type으로 바뀜을 보였으며, 비저항이 낮아지는 경향을 보였다. UV-Spectrometer를 이용한 광학적 특성을 측정해본 결과, 가시광선영역인 380 nm~780 nm에서의 투과율이 75%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여 주었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.589-592
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• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• Journal of the Korean Vacuum Society
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• v.14 no.3
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• pp.159-164
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• 2005

Indium tin oxide (ITO) films were deposited on a glass slide at a thickness of 280 nm by radio frequency(rf) magnetron sputtering from a ceramic target composed of $In_2O_3\;(90\%)\;+\;SnO_2\;(10\%)$. We investigated the effects of the annealing temperature (Ta) between 200 and 350'E for 30 min in air on such properties as thermal stability, surface morphology, and crystal structure of the films. X-ray diffraction spectra revealed that all the films were oriented preferably with [222] direction and [440] direction and the peak intensity increased with increasing annealing temperature. X-ray photoelectron spectroscopy (XPS) showed that the sodium was out-diffused from the glass substrate at the annealing temperature of $350^{\circ}C$. The sodium composition of the ITO film amlealed at $350^{\circ}C\;for\;30\;min\;was\;2.5\%$ at the surface. Also the sodium peak almost disappeared after 3 keV $Ar^+$sputtering for 6 min. The visible transmittance of all ITO films was over $77\%$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.289-289
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• 2010

정상 세포로부터 암과 같은 종양세포를 제거하는 방법으로 암세포가 사멸되는 임계온도 보다 높게 악성조직에 열을 가하는 방법이 연구되어지고 있다 [1]. 전류가 흐를 수 있는 4개의 전기탐침을 종양조직에 삽입하여 국부적으로 열을 발생시키는 발열요법으로 암을 치료하는 연구가 고려되고 있다. 발열요법은 1960년대에 시작하여 우리나라에서는 1985년 연세 암센터에서 capacitive type의 RF heating 또는 전자파에 의한 국소가온법과 방사선치료와 병용으로 이용되고 있다. 주로 이용되는 방법은 Radio frequency heating, Microwave heating, ultrasound heating을 들수 있다. 라디오주파수는 보통 300 MHz 이하의 주파수를 가리킨다. 본 연구에서는 교류파 대신에 직류전원에 의해 열을 발생하는 경우에 관한 연구이다. 전극에 의해 형성되는 전기장에 대한 방정식은 전도매질에서의 DC 응용모드이고, 조직 내에서의 직류 전류에 의해 발생되는 온도 분포를 모델링하는 bioheat 방정식과 연계된 문제이다. 전기장에 의해 발생되는 열의 근원은 resistive heat 또는 Joule 열이다. 본 연구에서는 교류 전류에 의한 RF heating 대신 단순한 모델의 경우로 직류 전류에 의한 열 발생에 관한 이론적 연구를 수행하였다. 종양 조직 내에 삽입된 전극에 22V를 인가하면 60초 이내에 $80^{\circ}C$까지 급속히 증가 된 후, 서서히 $90^{\circ}C$에 까지 도달한다. 4 개의 전극에 대칭적인 전위가 인가 된 경우 $50^{\circ}C$ 이상의 온도 분포를 암 조직의 모양과 유사하게 분포하게 하여 효과적인 치료를 수행 할 수 있는 조건을 제시한다.

• Journal of Electrical Engineering and Technology
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• v.11 no.6
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• pp.1763-1768
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• 2016

This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length ($L_{GS}$) and aperture length ($L_{AP}$). We analyze DC and RF parameters inducing on-state current ($I_{on}$), threshold voltage ($V_t$), breakdown voltage ($V_B$), transconductance ($g_m$), gate capacitance ($C_{gg}$), cut-off frequency ($f_T$), and maximum oscillation frequency ($f_{max}$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.89-91
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• 2003

In this paper, using a Langmuir probe Ar gas characteristic of electrodeless fluorescent lamp which used an inductively coupled plasma were investigated. The RF output changed into 5-50W in 13.56MHz. At this time internal plasma voltage of the chamber and probe current were measured while changing in -70V - +70V with a supply voltage by Langmuir probe. If pressure of Ar gas was increased, the electric current tended to decrease. Also, an electric current was increased according to an increase of a RF output.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.691-691
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• 2013

최근 휴대용 전자기기의 전원으로서 가장 널리 사용되고 있는 리튬 이차 전지는 우수한 에너지 밀도, 낮은 자가방전 속도로 인한 비 메모리 효과, 높은 작동전압으로 다양한 전자기기뿐만 아니라 미래형 자동차산업 및 항공산업 분야에서도 점차 사용 빈도가 증가하고 있다. 현재 리튬 이차 전지의 음극물질로 널리 사용되고 있는 흑연의 경우 초기 용량 감소가 크고 이론적인 최대용량(372 mAhg-1, LiC6)이 낮다는 문제가 있어 다양한 대체물질의 연구가 진행되고 있다. 그 중에서도 Si는 Li과 반응하여 Li4.4Si합금을 형성하며 높은 이론용량을 갖고 상용화된 전지의 전압(~3.7 V)보다 0.3 V정도 밖에 낮지 않기때문에 재료의 개발과 함께 바로 사용화 할 수 있다는 장점이 있다. 그러나 Si의 경우 금속 자체로 사용되는 경우 Li 이온이 삽입되어 Li4.4Si형성 시에 310%의 부피 팽창을 일으키게 되어 분쇄반응(pulverization)을 일으키고 충 방전에 따라 급격한 용량 감소를 야기한다. 본 연구에서는 이러한 문제점을 해결하기 위하여 RF 마그네트론 스퍼터링을 이용하여 보다 간단한 방법으로 Si층 사이에 수 나노의 Al층을 삽입하여 Si 입자의 부피 팽창으로부터 오는 응력을 상쇄시켜 높은 방전 용량 특성과 우수한 수명 특성을 동시에 구현하였다.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.48-53
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• 2002

Ferroelectric $Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{1-x}Ti_x]_{0.98}Nb_{0.02}O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on $(La_{0.5}Sr_{0.5})CoO_3$(LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole%. The crystallinity and electrical properties of the thin films with various composition ratio were investigated. The thin films deposited at the substrate temperature of $500^{\circ}C$ and the power of 80 W were crystallized to a perovskite phase after rapid thermal annealing(RTA) at $650^{\circ}C$ for 10 seconds in air. A PNZST thin films with Ti of 10 mole% showed the good crystallinity and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about $20\;{\mu}C/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2{\times}10^9$ switching cycles was less than 10%.

• Journal of Positioning, Navigation, and Timing
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• v.4 no.4
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• pp.173-180
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• 2015

In this study, an algorithm that detects a spoofing signal for a GPS L1 signal was proposed, and the performance was verified through RF spoofing signal simulation. The proposed algorithm determines the reception of a spoofing signal by detecting a correlation distortion of GPS L1 C/A code caused by the spoofing signal. To detect the correlation distortion, a detection criterion of a spoofing signal was derived from the relationship among the Early, Prompt, and Late tap correlation values of a receiver correlator; and a detection threshold was calculated from the false alarm probability of spoofing signal detection. In this study, an RF spoofing environment was built using the GSS 8000 simulator (Spirent). For the RF spoofing signal generated from the simulator, the RF spoofing environment was verified using the commercial receiver DL-V3 (Novatel Inc.). To verify the performance of the proposed algorithm, the RF signal was stored as IF band data using a USRP signal collector (NI) so that the data could be processed by a CNU software receiver (software defined radio). For the performance of the proposed algorithm, results were obtained using the correlation value of the software receiver, and the performance was verified through the detection of a spoofing signal and the detection time of a spoofing signal.