• Title/Summary/Keyword: RF 특성

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Effect of Ti-Doped Al2O3 Coating Thickness and Annealed Condition on Microstructure and Electrochemical Properties of LiCoO2 Thin-Film Cathode (Ti 첨가 Al2O3 코팅층의 두께와 열처리 조건이 LiCoO2 양극 박막의 미세구조와 전기화학적 특성에 미치는 영향)

  • Choi, Ji-Ae;Lee, Seong-Rae;Cho, Won-Il;Cho, Byung-Won
    • Korean Journal of Materials Research
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    • v.17 no.8
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    • pp.447-451
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    • 2007
  • We investigated the dependence of the various annealing conditions and thickness ($6\sim45nm$) of the Ti-doped $Al_2O_3$ coating on the electrochemical properties and the capacity fading of Ti-doped $Al_2O_3$ coated $LiCoO_2$ films. The Ti-doped-$Al_2O_3$-coating layer and the cathode films were deposited on $Al_2O_3$ plate substrates by RF-magnetron sputter. Microstructural and electrochemical properties of Ti-doped-$Al_2O_3$-coated $LiCoO_2$ films were investigated by transmission electron microscopy (TEM) and a dc four-point probe method, respectively. The cycling performance of Ti-doped $Al_2O_3$ coated $LiCoO_2$ film was improved at higher cut-off voltage. But it has different electrochemical properties with various annealing conditions. They were related on the microstructure, surface morphology and the interface condition. Suppression of Li-ion migration is dominant at the coating thickness >24.nm during charge/discharge processes. It is due to the electrochemically passive nature of the Ti-doped $Al_2O_3$ films. The sample be made up of Ti-doped $Al_2O_3$ coated on annealed $LiCoO_2$ film with additional annealing at $400^{\circ}C$ had good adhesion between coating layer and cathode films. This sample showed the best capacity retention of $\sim92%$ with a charge cut off of 4.5 V after 50 cycles. The Ti-doped $Al_2O_3$ film was an amorphous phase and it has a higher electrical conductivity than that of the $Al_2O_3$ film. Therefore, the Ti-doped $Al_2O_3$ coated improved the cycle performance and the capacity retention at high voltage (4.5 V) of $LiCoO_2$ films.

Comparison of Growth Characteristics and Ginsenoside Content of Ginseng (Panax ginseng C. A. Meyer) Cultivated with Greenhouse and Traditional Shade Facility (비닐하우스와 관행재배 인삼의 생육특성 및 진세노사이드 함량 비교)

  • Lee, Sung-Woo;Kim, Gum-Sook;Hyun, Dong-Yun;Kim, Yong-Burm;Kim, Jang-Wook;Kang, Seung-Won;Cha, Seon-Woo
    • Korean Journal of Medicinal Crop Science
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    • v.19 no.3
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    • pp.157-161
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    • 2011
  • Growth characteristics, root yield and ginsenoside contents of 3-year-old ginseng in greenhouse shaded by $30^{\circ}$ sloped-curtain made of aluminum were compared to traditional shade facility in order to develop cultural practice for organic ginseng. Light transmittance ratio in greenhouse with $30^{\circ}$ sloped-curtain shade was distinctly lower than that of traditional shade from sunrise to 9 a.m., while its ratio in greenhouse was higher than traditional shade since 9 a.m. due to the reflection of light. Air temperature of greenhouse was $1.3^{\circ}C$ higher than that of traditional shade on the first ten days of August due to more reflected light. Root yield of greenhouse was 44% higher than that of traditional cultivation because of the inflow of reflected light and the decrease of disease of Alternaria and Anthracnose by blocking rainfall. Dry matter partitioning ratio of rhizome and lateral root were increased in ginseng cultivated at greenhouse due to longer survival time in leaf than traditional cultivation. Total ginsenoside contents cultivated at greenhouse was decreased in the part of taproot, while it was increased in the part of lateral and fine root compare to traditional cultivation. Individual ginsenoside contents between greenhouse and traditional cultivation showed significant difference more frequent in fine root than taproot and lateral root. Total ginsenoside contents including $Rb_1$, $Rb_2$, Rc, Rd, Re, Rf, $Rg_1$, and $Rg_2$ in whole root of 3-year-old ginseng did not showed significant difference by greenhouse and traditional cultivation.

The Discrimination of Coisis Semen and Coisis lacrima-jobi Semen by the Random Amplified Polymorphic DNAs and Anatomical Characteristics (의이인과 염주의 RAPD분석 및 해부학적 특징에 의한 감별)

  • Lee, Mi-Young;Im, Seung-Hi;Kim, Ho-Kyoung;Han, Keong-Sik;Choi, Yong-Hyu;Ju, Young-Seung;Oh, Seung-Eun;Ko, Byoung-Seob
    • Korean Journal of Medicinal Crop Science
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    • v.10 no.1
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    • pp.17-23
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    • 2002
  • The seeds of Coix lachryma-jobi Linne var. mayuen Stapf. are used as dietary food for obesity and diabetes under the names of Yulmu in Korea and Yiyiren(薏苡仁) in China. It is one of the drugs promoting diuresis to eliminate the wetness-evil from the lower warmer in the traditional Korean medicine. According to ancient textbook of the traditional Korean medicine, it should be applied to patients with phlegm and heat, etc. The establishment of the method for the discrimination of Coisis Semen is very important for the quality control of drugs. Random amplified polymorphic DNA(RAPD) analysis and anatomical characteristics were used for the discrimination of Coix lachryma-jobi $Linn\acute{e}$ var. mayuen $S_{TAPF}$. and C. lachryma-jobi $Linn\acute{e}$. In the RAPD analysis with 20 primers, 8 primers gave informative and reproducible bands with the genomic DNA. From the cluster analysis, the genus Coix were divided into two groups at similarity coefficient of 0.863.

Properties of TiN films prepared by using the DC sputtering and HIPIMS. (DC 스퍼터링과 HIPIMS로 제조한 TiN 박막의 특성 비교)

  • Byeon, In-Seop;Yang, Ji-Hun;Jeong, Jae-Hun;Kim, Seong-Hwan;Jeong, Jae-In
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.102-102
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    • 2016
  • 본 연구에서는 직류 전원(direct current; DC)을 이용한 스퍼터링과 고전력펄스 마그네트론 스퍼터링(high-power impulse magentron sputtering; HIPIMS)의 두 가지 방법과 빗각 증착을 적용하여 제조한 티타늄 질화물(TiN) 박막의 미세구조 변화가 물성에 미치는 영향을 확인하였다. TiN 박막은 99.5%의 Ti 타겟을 사용하고, Ar가스와 $N_2$ 분위기에서 스테인리스(SUS304)와 초경(cdmented carbide; WC-10wt.%Co) 기판위에 코팅하였다. 기판은 알코올과 아세톤으로 초음파 세척을 실시한 후 진공용기에 장착하고 기본 진공도인 ${\sim}2.0{\times}10^{-5}Torr$ 까지 진공배기를 실시하였다. 기판과 타겟 간의 거리는 DC 스퍼터링은 10 cm, HIPIMS 스퍼터링은 8.5 cm 이었다. 진공용기의 압력이 기본 진공도까지 배기되면 Ar 가스를 ${\sim}10^{-2}Torr$로 주입한 후 기판에 라디오 주파수(radio frequency; RF) 전원으로 약 -800 V의 전압을 인가하여 글로우 방전을 발생시키고 약 30 분간 청정을 실시하였다. 기판의 청정이 끝난 후 기본 진공도까지 배기한 후 Ar와 $N_2$ 가스를 ${\sim}10^{-3}Torr$로 주입하여 TiN 코팅을 실시하였다. 빗각의 크기는 $45^{\circ}$$-45^{\circ}$이며, TiN 박막의 총 두께는 약 $2.5{\sim}4.0{\mu}m$ 로 유지하였다. 공정조건에 따라 TiN 박막의 주상정은 형태와 기울어진 각도가 다른 것을 확인하였다. DC 스퍼터링으로 제조된 TiN 박막은 기판홀더에 약 -100 V 의 bias 전압을 인가하면 인가하지 않은 박막에 비해 치밀한 박막의 성장과 경도 값도 증가하는 사실을 확인하였다. 또한 빗각을 적용하고 bias 전압을 인가하지 않은 시편에서 박리현상이 일어났다. HIPIMS로 제조한 TiN 박막은 bias 전압을 인가한 박막과 인가하지 않은 박막의 주상정 형상과 경도 값에 큰 차이가 없었으며, 박막의 박리현상은 모든 시편에서 일어나지 않았다. DC 스퍼터링으로 제조한 TiN 박막은 bias 전압을 인가하지 않으면 색상이 노란색이 아닌 갈색으로 나타났으며, HIPIMS으로 제조한 박막은 bias 전압 인가 유무에 상관없이 노란색 색상을 나타냈다. 앞서 설명한 DC 스퍼터링과 HIPIMS의 공정조건에 따라 나타난 박막의 경도, 색상, 물성변화 차이는 DC 스퍼터링보다 높은 HIPIMS의 이온화율에서 기인한 것으로 생각된다. 본 연구결과를 이용하면 다양한 형태의 박막 구조 제어가 가능하고 이러한 미세구조 제어를 통해서 박막의 물성도 제어가 가능할 것으로 판단된다.

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The characteristics of bismuth magnesium niobate multi layers deposited by sputtering at room temperature for appling to embedded capacitor (임베디드 커패시터로의 응용을 위해 상온에서 RF 스퍼터링법에 의한 증착된 bismuth magnesium niobate 다층 박막의 특성평가)

  • Ahn, Jun-Ku;Cho, Hyun-Jin;Ryu, Taek-Hee;Park, Kyung-Woo;Cuong, Nguyen Duy;Hur, Sung-Gi;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.62-62
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    • 2008
  • As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

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Relationship Between Annealing Temperature and Structural Properties of BaTiO3 Thin Films Grown on p-Si Substrates (p-Si 기판에 성장한 BaTiO3 박막의 어닐링온도와 구조적 특성과의 관계)

  • Min, Ki-Deuk;Kim, Dong-Jin;Lee, Jong-Won;Park, In-Yong;Kim, Kyu-Jin
    • Korean Journal of Materials Research
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    • v.18 no.4
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    • pp.222-227
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    • 2008
  • In this study, $BaTiO_3$ thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the $BaTiO_3$ thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from $500-1000^{\circ}C$. XRD results showed that the highest crystal quality was obtained from the samples annealed at $600-700^{\circ}C$. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to $600^{\circ}C$; and 80 nm grains were obtained at $700^{\circ}C$. The surface roughness of the $BaTiO_3$ thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was $700^{\circ}C$. XPS results demonstrated that the binding energy of each element of the thin-film-type $BaTiO_3$ in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at $1000^{\circ}C$. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to $700^{\circ}C$. All of the results obtained in this study clearly demonstrate that an annealing temperature of $700^{\circ}C$ results in optimal structural properties of $BaTiO_3$ thin films in terms of their crystal quality, surface roughness, and composition.

Enhanced Properties of Epoxy Molding Compound by Plasma Polymerization Coating of Silica (실리카의 플라즈마 중합 코팅에 의한 에폭시 봉지재의 물성 향상 연구)

  • Roh, J.H.;Lee, J.H.;Yoon, T.H.
    • Journal of Adhesion and Interface
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    • v.2 no.2
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    • pp.1-10
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    • 2001
  • Silica for Epoxy Molding Compound (EMC) was coated via plasma-polymerization with RF plasma (13.56 MHz) as a function of treatment time, power and pressure. 1,3-diaminopropane, allylamine, pyrrole, 1,2-epoxy-5-hexene, allylmercaptan or allylalcohol were utilized for plasma polymerization coating and adhesion of coated silica was evaluated by measuring flexural strength. CTE and water absorption of EMC were also measured, and fracture surface of flexural specimen was analyzed by SEM in order to elucidate the failure mode. The plasma polymer coated silica was analyzed by FT-IR and reactivity of plasma polymer coating with epoxy resin was evaluated with DSC in order to investigate the adhesion mechanism. The EMC prepared from the silica coated with 1,3-diaminopropane or allylamine exhibited high flexural strength, low CTE, and low water absorption compared with the control sample, and also exhibited 100% cohesive failure mode. These results can be attributed to the chemical reaction between the functional groups in the plasma polymer coating and epoxy resin, and also consistent with the results from FT-IR and DSC analysis.

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Graphoepitaxy of ZnO layers grown on periodic structured Si substrates (주기적 표면 구조의 SiO$_2$ 기판을 이용한 ZnO박막의 Graphoepitaxy)

  • Jung, Jin-U;Ahn, Hyeon-Cheol;Lee, Chang-Yong;Kim, Gwang-Hui;Choi, Seok-Cheol;Lee, Tae-Hun;Park, Seung-Hwan;Jung, Mi-Na;Jung, Myeong-Hun;Lee, Ho-Jun;Yang, Min;Yao, Takafumi;Chang, Ji-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.1
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    • pp.1042-1045
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    • 2005
  • The feasibility of graphoepitaxial growth of compound semiconductor has been studied. Two kinds of substrates were prepared; one is smooth substrate, the other one is a periodic structured substrate. ZnO film was deposited on both substrates by sputtering, and thermal treatment was performed to improve the crystal quality and investigate the effect of the periodic structure. Atomic force microscopy (AFM) and photoluminescence (PL) were used to characterize the samples. As a result, very similarchange, the improvement of crystallinity, has been observed from both samples, except the sample annealed at the highest temperature. It implies the periodic structure affects the crystallinity of the films, and the graphoepitaxy of compound semiconductors is possible by using appropriate surface structure.

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Implementation of unmanned cow estrus detection system for improving impregnation rate (번식률 향상을 위한 무인 발정발현 관찰시스템 구현)

  • Kim, Suc-June;Jee, Sun-Ho;Cho, Hyun-Chan;Kim, Chun-Su;Kim, Hyeon-Shup
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.9
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    • pp.6236-6246
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    • 2015
  • In the paper, we reduce non-pregnant conditions and improve impregnation rate by unmanned estrus detection and decide proper time for artificial insemination. It is too hard to detect estrus only by using activities, we develop unmanned estrus detection system that consist of RF activity sensors, cow management program and estrus detection algorithm that uses information of activities and breeding. We verify performance by experiments in four similar scale stockbreeding farmhouse. Each stockbreeding farmhouse breeds 87, 81, 93, 82 cows and expected estrus cows are 14, 19, 15, 17. In expected estrus cow, we fail in weak estrus detection - 3, 2, 1, 3 cows, but detect successfully normal estrus - 11, 17, 14, 14 cows. After artificial insemination, 10, 17, 13, 14 cows became pregnant successfully confirming that proposed unmanned estrus detection system is effective for deciding proper time for artificial insemination in normal estrus.

Etching properties of $Na_{0.5}K_{0.5}NbO_2$ thin film using inductively coupled plasma (유도결합 플라즈마를 이용한 $Na_{0.5}K_{0.5}NbO_2$ 박막의 식각 특성)

  • Kim, Gwan-Ha;Kim, Kyoung-Tae;Kim, Jong-Gyu;Woo, Jong-Chang;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.116-116
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    • 2007
  • 21 세기에 접어들면서 인터넷을 통한 정보 통신의 발달과 개인 휴대용 이동 통신기기의 활발한 보급에 따라 휴대형 전자기기들의 소형화와 고성능화로 나아가고 있다. 이러한 전자기기에 사용될 IC의 내장 메모리 또한 집적화 및 고속화, 저 전력화가 이루어져야 한다. 이러한 전자기기들에 필수적인 압전 세라믹스 부품 중 압전 부저 및 기타 음향 부품등을 각종 전자기기와 무선 전화기에 채택함으로써 압전 부품에 대한 수요와 생산이 계속 증가할 것으로 전망된다. 이처럼 압전 세라믹스를 이용한 그 응용 범위는 대단히 방대하며, 현재 모든 압전 부품들은 PZT 계열 재료로 만들어지고 있고, 차후 모두 비납계열 재료로 대체될 것이 확실시된다. Pb의 환경오염은 이미 오래전부터 큰 문제점으로 인식되고 있었으며 그 일례로 미국의 캘리포니아 주에서는 1986년부터 약 800종의 유해물질, 그 중에서도 Pb 사용을 300ppm 이하로 규제하는 Proposition 65를 제정하여 실행하고 있다. 그리고 2003년 2월에 EU (European Union) 에서 발표한 전자산업에 관한 규제 사항중 하나인 위험물질 사용에 관한 지칭 (Restriction of Hazardous Substance, RoHS) 에 의하면, 2006 년 7월부터 전기 전자 제품에 있어서 위험 물질인 Pb을 포함한 중금속 물질(카드늄, 수은, 6가 크롬, 브롬계 난연재)의 사용을 금지한다고 발표하였다. 비록 전자세라믹 부품에 함유된 Pb는 예외 사항으로 두었지만 대체 가능한 물질이 개발되면 전자세라믹 부품에서도 Pb의 사용을 금지한다고 규정하였다. 더욱이 일본은 2005 년부터 Pb 사용을 금지시켰다. 이와 같이 Pb가 환경에 미치는 영향 때문에 비납계 강유전 물질 및 압전 세라믹스 재료에 대한 연구가 전 세계적으로 활발히 진행되고 있다. 본 연구에서는 비납계 강유전체의 patterning을 위해서, NKN 박막을 고밀도 플라즈마원인 ICP를 이용하여 식각 mechanism을 연구하고, 식각변수에 따른 식각 공정을 최적화에 대하여 연구하였다. 가스 혼합비에 따라 식각 할때 700 W의 RF 전력과 - 150 V의 직류 바이어스 전압을 인가하였고, 공정 압력은 2 Pa, 기판 온도는 $23^{\circ}C$로 고정하였다. 식각 속도는 Tencor사의 Alpha-step 500을 이용하여 측정되었으며 식각 시 NKN 박막 표면과 라디칼과의 화학적인 반응을 분석하고 식각 메커니즘을 규명하기 위하여 XPS(x-ray photoelectron spectroscopy)를 사용하였다.

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