• Korean Journal of Soil Science and Fertilizer
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• v.31 no.2
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• pp.128-136
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• 1998

Most of total nitrogen in the surface soil exists in organic forms, of which amino acid-N is the major fraction. By-product fertilizers provide soil with humic substances, and humic acid is an essential component of humus. Amino acids(AAs) are easily converted to inorganic-N forms and thus play an important role in N fertility. This experiment was conducted to investigate the contents and distributions of AAs in humic acids which were extracted from the commercial by-product fertilizers of different composting materials. Total contents of AAs in humic acids ranged from 1.2 to 5.6%, of which neutral AAs were the highest with ranges of 0.8~4.5%. AAs contents in fertilizers composted from the plant residues such as leaf litter, sawdust and bark were in an order of neutral>acidic>basic AAs. In contrast, those from animal wastes, such as poultry and pig manures, were in an order of neutral>basic>acidic AAs. Distributions of total, acidic and neutral AAs were in the respective order of leaf litter>sawdust>pig manure>poultry manure>peat, bark>sawdust>leaf litter>peat and leaf litter>sawdust>bark>peat. Distributions of the basic AAs were in the reversed order of the acidic AAs. In bark fertilizer with increasing compost maturity, contents of the acidic AAs were increased in compensation for the decreases in those of neutral and basic AAs. Results demonstrated that distributions of amino acids in humic acid of by-product fertilizers were different from composting raw materials and degrees of humification.

• Journal of the Korean Wood Science and Technology
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• v.36 no.6
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• pp.59-68
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• 2008

This study was carried out to investigate the effects of the Inside end-taping (Inside-ET) and Outside end-taping (Outside-ET) treatments on prevention of drying defects during radiofrequency/vacuum (RF/V) drying domestic yellow poplar log cross section with size of 20~75 mm in thickness and 120~470 mm in diameter. The treatments of Inside-ET and Outside-ET were quite effective for producing sound log cross sections with thinner than 33 mm and smaller than 270 mm in diameter. Even the 60 mm- and 75 mm-thick log cross sections, if the diameter was smaller than 30 cm, it might expect preventing formation of border checks by appropriate end-taping treatments. The positions of the observed border checks differed in diameter ranging at a relative radius about 0.50~0.63 diameter, and it was estimated that it was necessary to select the border position of end-taping treatment properly according to the diameter of log cross sections. It was observed that the radius of 0.3 diameter was the critical location for pretreatment for preventing formation of border checks in the log cross section with middle diameter. There were severe border checks and V-shaped cracks in the log cross section with large diameter. This was because of the severe variation of moisture content along radial direction of natural characteristic of domestic yellow poplar.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.289-293
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• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• Journal of Biomedical Engineering Research
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• v.31 no.3
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• pp.217-226
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• 2010

The lower limb orthosis with a pneumatic rubber actuator, which is intended for the assistance and the enhancement of muscular activities of lower limbs was developed in this study. Compared to other knee extension assistive devices being developed by other researchers, our device is designed especially for the elderly people and intended only for slight assistance so that the subjects can keep their muscular strength. For the effectiveness of system, muscular activities of major muscles in lower limbs during sit-to-stand (STS) and squat motion were measured and analyzed. Subjects were performed the STS and squat motion with and without lower limb orthosis. We made comparison muscular activities between with and without lower limb orthosis. Lower limb orthosis was controlled using muscular stiffness force feedback that is controlled by muscular activities of the measured muscle from force sensor. For analysis of muscular activities, electromyography of the subjects was measured during STS and squat motion, and these were measured using MP 150(BIOPAC Systems, Inc.). Muscles of interest were rectus femoris(RF), vastus lateralis(VL), vastus medialis(VM) and vastus intermedius(VI) muscles in lower limbs of the right side. A biodex dynamometer was used to measure the maximal concentric isokinetic strength of the knee extensors of wearing and not wearing orthosis on right side. The test were performed using the concentric isokinetic mode of test with the velocity set at 60°/s for muscles around the knee joints. The experimental result showed that muscular activities in lower limbs wearing orthosis using muscular stiffness force of a vastus medialis muscle was reduced and knee extension torque of an knee joint wearing lower limb orthosis was increased. With this, we confirmed the effectiveness of the developed lower limb orthosis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Korean Journal of Plant Resources
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• v.24 no.5
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• pp.499-506
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• 2011

The purpose of this study was to search available resources for new natural colorants. The extraction efficiency of colorants from black cowpea seed coats and their storage stability were examined according to the various extraction and storage conditions in this study. The results obtained were as follows: the optical density (O.D.) values of the extracted colorants increased with increasing extract time and temperature. Extraction at pH 4 was seen to be the most efficient among the various pH conditions. The color of the extract solutions were seen to change with variation in pH, for example, anthocyanins display color changes from orange-red, to orange, to blue, to greenish-blue at pH 3.0, 4.0-6.0, 7.0 and 9.0-11.0, respectively. The color changes of the extract solutions over various storage periods were determined using UV/Vis spectra these color changes indicate characteristic absorption patterns and a discoloration index which indicates the rate of absorbance (532 nm/454 nm). Methionine addition influenced the storage stability of the colorant solutions and this addition led to better storage stability than non-addition. In paper chromatography of juice extracted colorant, a long stripe was seen on development. Among three colorants obtained via paper chromatography according to development rate, at least two different colorants were mixed indicated by the appearance, or not, of a shoulder at 552 nm depending on the extent of development.

• KSBB Journal
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• v.21 no.6 s.101
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• pp.422-427
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• 2006

The culture media from Fomitopsis pinicola were extracted by methanol and examined growth inhibition against Helicobacter pylori. The culture media from 8 days fermentation of F. pinicola showed maximum inhibition activity on H. pylori in 0.25 mg as MIC value. The highest activity against H. pylori by MHCS agar diffusion medium by Fp-P1 in 22.7 mm ID among 3 peaks from methanol fraction of 8 days culture media of Fomitopsis pinicola which purified by ion-exchange chromatography. The Fp-P1 from DEAE-Sephadex A-25 have been analysed by TLC as Fp-T1, Fp-T2 and Fp-T3 by ninhydrin staining. Fp-T3 (Rf value : 0.67) was higher activity against H. pylori in 14.4 mm ID. Fp-T3 was identified as single band by HPLC and TLC. It was assumed to aminosugar by BioLC analysis and TLC staining.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.9-17
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• 2010

Recently, there has been much interest in orthogonal frequency division multiplexing (OFDM) for next generation wireless wideband communication systems. OFDM is a special case of multicarrier transmission, where a single data stream is transmitted over a number of lower-rate subcarriers. One of the main reasons to use OFDM is to increase robustness against frequency-selective fading or narrowband interference. However, in the radio systems it is also important to distortion introduced by high power amplifiers (HPA's) such as solid state power amplifier (SSPA) considered in this paper. Since the signal amplitude of the OFDM system is Rayleigh-distributed, the performance of the OFDM system is significantly degraded by the nonlinearity of the HPA in the OFDM transmitter. In this paper, we propose a canonical piecewise-linear (PWL) model based digital predistorter to prevent signal distortion and spectral re-growth due to the high peak-to-average power ratio (PAPR) of OFDM signal and the nonlinearity of HPA's. Computer simulation on an OFDM system under additive white Gaussian noise (AWGN) channels with QPSK, 16-QAM and 64-QAM modulation schemes and modulator/demodulator implemented with 1024-point FFT/IFFT, demonstrate that the proposed predistorter achieves significant performance improvement by effectively compensating for the nonlinearity introduced by the SSPA.