• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1915-1917
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• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 500 [mTorr] and the RF power was varied from 10 [W] to 200 [W]. It was found that the luminance tends to be decreased when argon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon pressure is low and when the RF power is in the range of 30 [W]${\sim}$40 [W].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.125-125
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• 2009

In this paper, we have investigated about MgO thin films on Si(100) substrate by RF magnetron Sputtering. MgO thin films were affected by RF input power, gas pressure, gas composition, and substrate temperatures. So, we focused on most effective RF input power in deposition condition. Thickness of MgO thin films was measured by surface profiler. And structural analysis carried out by X-ray Diffraction(XRD). physical characteristic and thickness of thin films changed with RF input power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.7
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• pp.458-461
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• 2014

TiC thin films were deposited on Si wafer by unbalanced magnetron sputtering (UBMS) system with two targets of graphite and titanium. During the TiC sputtering, the RF power was varied from 100 W to 175 W and the physical and electrical properties of TiC films were investigated. The hardness and rms surface roughness of TiC films were improved with increasing RF power and the maximum hardness about 24 GPa and the minimum rms surface roughness about 1.2 nm were obtained. The resistivity of TiC films was decreased with increasing RF power. Consequently, the physical and electrical properties of TiC film wewe improved with increasing RF power.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.671-676
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• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.133-133
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• 2010

중성입자빔 입사장치(neutral beam injection, NBI)의 중성빔 에너지 효율은 이온원의 수소 이온밀도 분율이 결정한다. 이온원에서 만들어진 $H^+$, $H_2^+$ 그리고 ${H_3}^+$는 중성화 과정(neutralization) 중 해리(dissociation) 때문에 각각 입사 에너지의 1, 1/2 그리고 1/3을 가진 중성입자가 된다. 중성빔 에너지 효율 제고하기 위해서는 이온원의 전체 이온 중 단원자 수소 이온 밀도 증가가 필요하다. 유도결합형 수소 플라즈마 이온원에서 RF 안테나 주파수에 따른 플라즈마 밀도와 단원자 수소 이온 밀도 비율 변화를 관찰하였다. RF 플라즈마에서 가스 압력이 결정하는 전자의 운동량 전달 충돌 주파수 대비 높은 RF 안테나 주파수(13.56 MHz)와 낮은 RF 안테나 주파수(수백 kHz)의 전력을 인가하였으며, Langmuir 탐침, 안테나 V-I 측정기 그리고 QMS(quadrupole mass spectrometer)을 이용하여 플라즈마 특성을 진단하였다. 플라즈마 밀도와 수소 이온 밀도 분율은 플라즈마 가열 메커니즘과 수소 플라즈마 내 반응 메커니즘에 의해 결정된다. 플라즈마 가열 메커니즘에 따른 실험 결과에 대한 RF 안테나 주파수 효과는 플라즈마 트랜스포머 회로 모델을 통해 해석하였으며, 수소 플라즈마 내 반응은 0-D 정상 상태의 입자 및 전력 평형 방정식 결과로 해석하였다.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.3
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

• Proceedings of the KIEE Conference
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• 2000.07d
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• pp.3103-3105
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• 2000

본 논문은 RF/ID 카드를 이용한 도어락 시스템의 개발에 관한 것이다. 기존 기계적 도어락 시스템의 보안과 편리성을 도모하기 위해 전자식 도어락가 현재 널리 쓰이고 있다. 대부분의 도어락 시스템이 버튼식이지만 현재 RF/ID 카드를 많이 쓰는 추세이다. RF/ID카드는 비접촉식으로 보안성과 그 신뢰성이 뛰어나며 안테나 설계와 Tag의 특성에 따라서 그 통신 범위도 작게는 몇Cm에서 크게는 몇십m 까지 된다. 따라서 그 응용 범위 또한 광범위해서 사람. 개체. 물류등의 개체인식에 널리 쓰이고 있다. 본 논문은 이러한 RF/ID 카드를 소규모 도어락 시스템을 요구하는 가정, 또는 오피스텔과 같은 곳에서 쓰일 수 있는 도어락 시스템을 개발하였다.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1695-1697
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• 2003

In this paper the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber a RF power of 13.56MHz was appied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar-I line, luminance were investigated. At this time the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10${\sim}$60m Torr, 10${\sim}$300W respectively.

• Proceedings of the Korean Society of Computer Information Conference
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• 2023.01a
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• pp.167-168
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• 2023

본 논문에서는 저전력 433MHz 주파수 RF 신호가 여러 종류의 벽을 투과할 시 신호에 일어나는 감쇠를 비교한다. 국내에서 기존의 와이파이, 블루투스 같은 고주파수 대역의 RF 신호에 관한 연구 및 실험은 많이 행해지었지만, 한국의 전파 관리법에 의해 성능이 제한된 비면허 주파수인 433MHz 대역의 RF 신호에 관한 연구는 매우 적게 이루어져 있다. 이러한 저주파수 대역 신호의 가장 큰 장점은 장거리 통신에 능하고 벽 투과특성이 뛰어나다는 것이다. 본 논문에서는 실험을 통해 433MHz 대역 RF 신호가 여러 종류의 장애물을 통과 시 신호 세기가 어떻게 변하는지 각각 비교하고 이를 통해 비가시 영역에서 저전력 주파수 통신의 사용 가능성을 확인한다.