• Electrical & Electronic Materials
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• v.21 no.8
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• pp.3-10
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• 2008

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.6
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• pp.25-29
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• 2017

This paper presents a hetero-integration of electrostatically actuated RF MEMS Switch and step up DC-DC converter on a redistribution layer using commercial PCB process. RF characteristics of Duroid with $56{\Omega}$ impedance GCPW transmission line and that of FR4 with $59{\Omega}$ impedance CPW transmission line were analyzed. From DC to 6GHz, RF characteristics of Duroid were better than that of FR4, insertion loss was 2.08dB lower, return loss was 3.91dB higher, and isolation was 3.33dB higher.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1217-1219
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• 2003

상용화되어 있는 이동통신 기기의 Front-end 부분은 듀플렉서와 필터를 포함하는 수동소자로 구성되어 있다. 듀플렉서의 임피던스 정합선로는 전송선로 이론으로부터 설계하며, 단순하게 ${\lambda}=1/4$ 파장 길이의 정합 선로를 설치하는 것이기 때문에 정합선로를 이용한 듀플렉서 성능을 극대화하기 위한 설계의 융통성이 없는게 현실이다. 이런 문제점을 해결하기 위하여 집중소자(lumped element)인 R L C를 탄성 표면파 듀플렉서 대신 스위치 모들에 적용하게 된다면 여러 가지 다양한 형태의 회로를 구현할 수 있고 회로망 내에 위치하는 집중소자의 정격을 최적화하여 스위치 모듈의 성능을 향상시킬 수 있는 가능성이 있다. 본 연구에서는 $900 MHz{\sim}2.2 GHz$의 대역에서 소형화 집적화에 적용 가능한 디바이스를 개발하기 위하여 고주파, 저진압, 저손실 스위치 모듈의 제조와 구성되는 커패시터와 인덕터의 제조와 특성에 관하여 연구하였다.

• Journal of Satellite, Information and Communications
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• v.6 no.1
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• pp.28-31
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• 2011

In this paper, a new set of structural and sacrificial material that is diamond like carbon (DLC)/photoresist for high performance piezoelectric RF-MEMS switches which are actuated in d33 mode is suggested. To avoid curing problem of photoresist sacrificial layer, DLC structure layer is deposited at room temperature by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. And lead zirconate titanate (PZT) piezoelectric layer is deposited on structure layer directly at room temperature by rf magnetron sputtering system and crystallized by rapid thermal annealing (RTA) equipment. Particular attention is paid to the annealing of PZT film in order to crystallize into perovskite and the variation of mechanical properties of DLC layer as a function of annealing temperature. The DLC layer shows good performance for structure layer in aspect to Young's modulus and hardness. The fabrication becomes much simpler and cheaper with use of a photoresist.

• Journal of Sensor Science and Technology
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• v.19 no.4
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• pp.320-327
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• 2010

In this paper, electrostatically actuated direct contact type RF MEMS switches have been designed and demonstrated. As driving structures of the switch, cantilever, bridge, and torsion spring beam structures are used and the actuation voltage characteristics of the switches have been compared and discussed. The designed RF switches are fabricated with the surface micromachining technology using the electroplated gold and nickel structures. The characteristics of the fabricated switches are measured and analyzed. The switch, which is fabricated using the 510 ${\mu}m$-length bridge structure with the thickness of 1.5 ${\mu}m$, is actuated with 15 V driving voltage. The insertion losses are less than 0.2 dB over the measured frequency ranges from 0 to 20 GHz and the isolations are more than 30 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.26 no.10
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• pp.1567-1570
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• 2022

This paper, we presents a RF protection technique of antenna switch by improving the power handling capability in worst case environment mode for mobile phone applications without critical payment of circuit performances such as insertion loss, isolation and ACBV (AC breakdown voltage). By applying a additional capacitive path located in front of the antenna in cell-phone, it performs the effective reduction of input power in high voltage standing wave ratio (VSWR) condition. Under the all-path off condition which causes a high VSWR, it achieved 37.7dBm power handling level as high as 5.7dB compared to that of conventional one at 2GHz. In addition, insertion loss and isolation performances were 0.31dB and 42.72dB at 2 GHz, respectively which were almost similar to that of the conventional circuit. The proposed antenna switch was fabricated in 130nm CMOS SOI technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.8
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• pp.958-966
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• 2012

This paper presents a compact bluetooth/WiFi dual-mode dual-band RF front-end module(FEM) is realized by low temperature co-fired ceramic(LTCC) technology. The proposed RF front-end module consists of a diplexer, baluns in the LTCC substrate, and an SPDT switch, an SP3T switch on the LTCC substrate. In order to reduce the module size and increase integration level, the proposed diplexer and balun are designed using LC lumped elements. The parasitic elements caused by coupling effect between metal pattern layers and ground plane layer are considered during the design. The fabricated dual-mode RF front-end module has 13 pattern layers including three inner ground layers and it occupies less than $3.0mm{\times}3.7mm{\times}0.66mm$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• Journal of IKEEE
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• v.13 no.3
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• pp.1-6
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• 2009

In this paper, the external matching circuits were designed in order to compensate the efficiency which decreases by human body effect in the internal antenna phone. Comparing the two types of matching circuit, we selected the structure to minimize the switch stress. RF MEMS switch using low voltage was compared with FET switch and measured the performance in the handset. Here, the detection circuit which can couple th reflection power from antenna was added in the handset and we set up the demonstration system that can compensate the loss of hand effect automatically. In this system, when hand effect occurred, the radiation power increased 2.5dB by operation the matching circuit.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.60-68
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• 2001

본 논문에서는 최근 초소형 기술로 각광받고 있는 MEMS(MicroElectroMechanical System) 기술을 이용한 무선통신 분야의 응용을 제고한다. RF ME- MS 기술은 기존의 기술들에 비해 크기나 전력소모, 삽입손실 등에서 우수한 고주파 특성을 갖는 소자 나 부품을 만들 수 있으며 특히 휴대용 단말기에 적 용 가능한 RE 부품들 즉 저손실 전송선로, 스위치, High Q inductor, 안테나 등의 주요 부품에 대한 연 구가 많이 이루어지고 있다.