• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.347-356
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• 2001

The issues that influence the packaging of high-speed LiNbO$_{3}$ modulators are discussed, and packaging approaches that result in only minor degradation of the modulator's RF performance are described. The primary problems dealt in this paper, associated with high-speed device packaging, are fallen into the following five categories: die features, pigtailing, suppression of RF package resonance, RF launcher approach, termination approach. By considering factors to influence the modulator performance in packaging, a LiNbO$_{3}$ intensity modulator was fabricated and packaged to have S21 better than -3㏈ upto 10㎓ and S11 below -l5㏈ upto 18㎓.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.386-386
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• 2010

최근의 전자재료들은 산화물 기반의 소자들을 이용하며 이들 소자의 특징은 가시광 영역에서의 높은 투과도와 실리콘 기반의 소자에 비해서 높은 이동도를 나타낸다. 이러한 점을 활용하여 LCD, PDP, 태양전지 등으로의 응용을 위해 활발히 연구되고 있다. 본 연구에서는 비정질임에도 이동도가 $10cm^2/V{\cdot}s$ 정도로 높은 이동도를 가지고 있는 a-IGZO 박막에 대하여 RF magnetron sputtering 법을 이용, 다각도의 연구를 진행하였다. 기판은 Corning 1737 유리기판을 사용하였으며 유기 클리닝 후 즉시 챔버 내부에 장착되었다. IGZO 타겟은 $In_2O_3$, $Ga_2O_3$, ZnO 분말을 각각 1:1:2mol% 조성비로 혼합하여 소결한 타겟을 사용하였으며 AFM, SEM, XRD 투과도를 이용하여 산소의 함량과 RF power에 따른 박막의 변화를 알아보았다. 박막 증착 조건으로는 초기 압력을 $2.0{\times}10^{-6}$ Torr, 증착압력으로 $2.0{\times}10^{-2}$ Torr를 유지하였으며, Ar 과 $O_2$의 비율을 10에서 40%까지 변화시키며 시편을 제작하였다. AFM 분석결과 $O_2$가 첨가될수록 박막의 거칠기가 감소하였으며, XRD 결과 Bragg's 법칙을 만족 하지 않는 비정질 구조임을 확인할 수 있었다. 가시광선 투과 특성은 $O_2$를 첨가한 박막이 첨가하지 않은 박막보다 우수하였으며 그 평균은 85% 이상으로 양호하였다. Hall과 XPS 분석결과 산소함량이 많아질수록 박막의 특성이 절연체의 특성을 가짐을 확인하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.7
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• pp.737-746
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• 2014

Recently, researches about MIMO(Multi-Input Multi-Output) system are being studied actively due to high-capacity and high-speed communication. However, MIMO system has many RF(Radio Frequency) chains according to many array antennas. So, MIMO system has disadvantages such as high-complexity and high-power-consumption. Also, it is impossible to miniaturize the antenna dimension. In order to solve these problems, beamspace MIMO system using ESPAR(Electronically Steerable Parasitic Array Radiator) antenna was proposed. It is possible to reduce the complexity and the power-consumption, because it has single RF chain by using one active antenna and several parasitic elements. In this paper, in order to improve the security, for the first time, chaos communication algorithm is applied to QPSK modulated beamspace MIMO system using ESPAR antenna. We define as chaos QPSK beamspace MIMO system, and evaluate the SER performance. Also, we confirm that QPSK symbols can be made by changing the reactance values of parasitic elements, and evaluate the SER performance of this system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.3
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• pp.632-638
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• 2011

This paper presents on-chip Design-for-Testability (DFT) circuit for radio frequency System-on-Chip (SoC) applications. The proposed circuit measures functional specifications of RF integrated circuits such as input impedance, gain, noise figure, input voltage standing wave ratio (VSWRin) and output signal-to-noise ratio (SNRout) without any expensive external equipment. The RF DFT scheme is based on developed theoretical expressions that produce the actual RF device specifications by output DC voltages from the DFT chip. The proposed DFT showed deviation of less than 2% as compared to expensive external equipment measurement. It is expected that this circuit can save marginally failing chips in the production testing as well as in the RF system; hence, saving tremendous amount of revenue for unnecessary device replacements.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.6
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• pp.689-697
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• 2016

In this paper, we design and implement SPA (Switched Parasitic Antenna) antenna which can control its beampattern using multiple parasitic elements. By applying SPA antenna to wireless communication system and implementing beamforming scheme, we show that SPA antenna can be used to improve the performance of wireless communication systems. SPA antenna consists of a single active antenna and multiple parasitic elements around the active one, and can control its beampattern by switching the parasitic elements. Using this characteristic of the SPA antenna, it is possible to impelemtent beamforming technique with single RF chain, which enables to design low cost, low complexity and low power wireless communication systems. In order to verify the beamforming gain, we measure and analyze the system level performance, such as SNR, PER, and throughput.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.2
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• pp.33-43
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• 2002

현대의 레이다나 통신 시스템에 있어 위상 배열안테나는 필수 구성요소이고 이러한 위상 배열 안테나에는 수 천개의 독립적인 위상제어기가 사용되어지고 있다. 따라서 대량생산이 가능하면서도 성능이 우수한 저손실, 저가격의 True-Time Delay (TTD)를 지원하는 위상천이기가 크게 요구되고 있는 실정이다. 최근 몇 년 동안 MEMS 공정을 이용한 저손실 RF 스위칭 소자와 가변 캐패시터가 성공적으로 개발되었으며 이러한 저손실의 MEMS 스위칭 소자를 이용한 위상천이기 구현이 가능하게 되었다. 본 논문에서는 크기나 전력소모, 삽입손실 등에서 우수한 고주파 특성을 갖는 RF MEMS (Micro-Electro Mechanical System) 스위치에 대해서 간략히 언급하고 이를 이용한 위상천이기와 기존의 위상천이기를 비교 분석하였다.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.248-251
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• 2000

본 논문에서는 SIEMENS사의 BAS125 소자의 I-V curve에서 RF신호를 고려하여 파라미터를 추출하였으며, 바이어스에 독립적인 외부소자를 추출하고, 바이어스에 종속적인 접합캐패시터를 S-parameter를 fitting하여 추출하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.4
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• pp.80-85
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• 2007

The passivation is one of the important technologies for protection of the devies from damage. In this paper, we fabricated $0.1{\mu}m\;{\Gamma}$--gate InAIAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on a GaAs substrate. And then the wafer with MHEMTs was divided into two pieces; one for passivation and another for without passivation experiments. The passivations were done by using both low-k BCB and Si3N4 thin films. DC and RF performances were measured and the results are compared. The MHEMTs with BCB passivation show lower degradation than ones with Si3N4 passivation.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.55-67
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• 2003

본 고에서는 차세대 무선통신용 초소형 단말기 구현에서 RF 시스템의 성능 개선에 크게 기여하게 될 RF 집적형 안테나 기술 현황과 향후 발전 방향이 제시된다. 고성능을 유지하면서 초소형 RF 전치단을 실현하기 위한 능동소자와 안테나가 결합하여 복합 기능을 하는 능동 집적 안테나(AIA, Active Integrated Antenna) 기술 현황, RF 시스템 단일 패키지(RF-SOP, System On Package) 형태에 집적 가능한 안테나 및 미래의 꿈인 RF 시스템 단일 칩 (RF-SOC, System On Chip)을 향한 단일 칩 안테나 (AOC, antenna on chip) 기술 동향 등이 기술된다.