• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.671-674
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• 2005

The series parasitic resistances ($R_s$, $R_g$, $R_d$, $R_{sub}$) of BSIM3v3 RF MOSFET macro model were directly extracted from measured S-parameters in the GHz region by using simple 2-port parameter equations. Also, overlap capacitance and junction capacitance parameters were extracted by tuning $S_{11}$, $S_{12}$, and $S_{22}$ respectively while DC-parameters and all parasitic resistances are fixed at previously extracted values. These data are verified to be accurate by observing good correspondence between modeled and measured S-parameters up to 10GHz.

• Journal of the Korean Applied Science and Technology
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• v.14 no.1
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• pp.103-107
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• 1997

This study was carried out to separate and identify the antioxidative substances in persimmon leaves. The antioxidative substances in persimmon leaves were extracted by methanol. The extract was fractionnated by SEP-PAK cartridge colum. From these results five fractions(F-I${\sim}$V) were obtained. Antioxidative activity of each fractions was examined by the DPPH methord. The F-II, III and IV showed antioxidative activity and among them F-II and F-III showed the strongest. Five frations were separated by TLC using ethylacetate : chloroform : formic acid : $H_2O$(8 : 1 : 1 : 1 v /v) as the solvent. From these results were obtained spots of Rf 0.71, 0.35 and 0.25. This spots were scraped from the plate and extracted by methanol. The extracts thuse obtained were used for examination of identify by TLC, UV /VIS-spectrophotometer and HPLC. Among them spot of Rf 0.71 were demonstrated to catechin and the spots of Rf 0.35 and 0.25 was suggested to polyphenol substances.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.545-546
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• 2006

The improved model that external capacitances are connected to a conventional BSIM3v3 RF Macro model with Rg and Rsub is developed in this paper. The extracted external capacitances and resistances are modeled by scalable fitting equations. The modeled S-parameters of $0.13{\mu}m$ NMOSFET agree well with measured ones from 10MHz to 10GHz, verifying the accuracy of the improved model.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.112-118
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• 2001

Magnetic field is commonly used in low temperature processing plasmas to enhance the performance of the plasma reactors. E$\times$B magnetron or surface multipole configuration is the most popular. However, the properties of capacitively coupled rf plasma confined by axial static magnetic field have rarely been studied. With these background, the effect of magnetic field on the characteristics of capacitively coupled 13.56 MHz/40 KHz argon plasma was studied, Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and emissive probe. At low pressure region (~10 mTorr), ion current increases by a factor of 3-4 due to reduction of diffusion loss of charged particles to the wall. Electron temperature slightly increases with magnetic field for 13.56 MHz discharge. However, for 40 KHz discharge, electron temperature decreased from 1.8 eV to 0.8 eV with magnetic field. It was observed that the magnetic field induces large temporal variation of the plasma potential. Particle in cell simulation was performed to examine the behaviors of the space potential. Experimental and simulation results agreed qualitatively.

• 제어로봇시스템학회:학술대회논문집
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• 1996.10a
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• pp.255-258
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• 1996

This paper describes a DC voltage controller for the DC power supply which is constructed using the full-bridged MOS-FET DC-to-RF power inverter and rectifier. The full-bridged MOS-FET DC-to-RF inverter consisting of four MOSFET arrays and an output power transformer has a control function which is able to control the RF output power when the widths of the pulse voltages which are fed to four MOS-FET arrays of the fall-bridged inverter are changed using the pulse width control circuit. The power conversion efficiency of the full-bridged MOS-FET DC-to-RF power inverter was approximately 85 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The RF output voltage from the full-bridged MOS-FET DC-to-RF inverter is fed to the rectifier circuit through the output transformer. The rectifier circuit consists of GaAs schottky diodes and filters, each of which is made of a coil and capacitors. The power conversion efficiency of the rectifier circuit was over 80 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The output voltage of the rectifier circuit was changed from 34.7V to 37.6 V when the duty cycles of the pulse voltages were changed from 30 % to 50 %.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1009-1014
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• 2012

This paper has proposed a 2,500 MHz ~ 2,570 MHz 0.13-${\mu}m$ CMOS RF front-end transmitter for LTE-Advanced systems. The proposed RF front-end transmitter is composed of a quadrature up-conversion mixer and a driver amplifier. The measurement results show the maximum output power level is +6 dBm and the suppression ratio for the image sideband and LO leakage are better than -40 dBc respectively. The fabricated chip consumes 36 mA from a 1.2 V supply voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.489-489
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• 2012

The vibrational distribution of $N_2$ (B, v') in after-glows in $N_2$ RF flowing plasma was investigated. The optical emission of the after-glow was studied as function of distance from plasma. In a tube 2.1 cm, the gas pressure varied 8 Torr with 1000sccm nitrogen gas flowing late.. The discharges were excited by two ring-electrode powered by RF 13.56 MHz 100 Watt. $N_2$ (B, v') vibrational distribution was analyzed to see depends of position in after-glow. Dissociation rate of $N_2$ varied showing maximum in the late after-glow region. We studied $N_2$ RF capacitive flowing plasmas and afterglows by emission spectroscopy and by NO titration to determine the density of N-atoms.

• Journal of Biosystems Engineering
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• v.32 no.4
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• pp.230-236
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• 2007

In this study, a tail rotor system for an agricultural RF controlled helicopter was developed and tested. This study concluded the mechanical development of the 'Agro-heli' by completing the tail rotor system and its radio console. The RF control system was closely related with the tail system for the control of flying attitude. The thrust of the tail system balance off the reaction torque, created by the main rotor. Lifting tests with and without the tail system were compared for estimating the consumption of power. The tail system would use $4{\sim}5%$ of the total power which was in an acceptable range. Flying performance and attitude was visually inspected. It showed reliable and safe control during the distance flying trials and could be adapted for utilization in aerial applications. Aerial application using an RF controlled agricultural helicopter may make precise and timely spraying possible.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.15-20
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• 2007

Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.