• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.236-244
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• 2003

In this paper, RF and IF circuits for mobile terminals which have usually been implemented using expensive BiCMOS processes are designed using CMOS circuits, and a Tx CMOS RF/IF single chip for PCS applications is designed. The designed circuit consists of an IF block including an IF PLL frequency synthesizer, an IF mixer, and a VGA and an RF block including a SSB RF mixer and a driver amplifier, and performs all transmit signal processing functions required between digital baseband and the power amplifier. The phase noise level of the designed IF PLL frequency synthesizer is -114dBc/Hz@100kHz and the lock time is less than $300{\mu}s$. It consumes 5.3mA from a 3V power supply. The conversion gain and OIP3 of the IF mixer block are 3.6dB and -11.3dBm. It consumes 5.3mA. The 3dB frequencies of the VGA are greater than 250MHz for all gain settings. The designed VGA consumes 10mA. The designed RF block exhibits a gain of 14.93dB and an OIP3 of 6.97dBm. The image and carrier suppressions are 35dBc and 31dBc, respectively. It consumes 63.4mA. The designed circuits are under fabrication using a $0.35{\mu}m$ CMOS process. The designed entire chip consumes 84mA from a 3V supply, and its area is $1.6㎜{\times}3.5㎜$.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.218-224
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• 2006

RF sputtering process was applied to produce thin hydroxyapatite(HAp) films on Ti-6Al-4V alloy substrates. The effects of different heat treatment conditions on the hardness between HAp thin films and Ti-6Al-4V alloy substrates were studied. Before deposition, the Ti-6Al-4V alloy substrates were heat treated for 1h at $850^{\circ}C\;under\;3.0{\times}10^{-3}torr$, and after deposition, the HAp thin films were heat treated for 1h at $400^{\circ}C,\;600^{\circ}C\;and\;800^{\circ}C$ under the atmosphere, and analyzed FESEM-EDX, FTIR, XRD, nano-indentor, micro-vickers hardness, respectively. Experimental results represented that the surface defects of thin films decreased by relaxation of internal stress and control of substrate structure followed by heat treatment of substrates before the deposition, and the HAp thin films on the heat-treated substrates had higher hardness than none heattreated substrates before the deposition, and the hardness properties of HAp thin films and Ti-6Al-4V alloy substrates appeared independent behavior, and the hardness of HAp thin films decreased by formation of $VTiO_3(OH),\;{\theta}-Al_{0.32}V_2O_5,\;Al_{0.33}V_2O_5$.

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1905-1913
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• 2006

The researches about the hardware and the software implementing ubiquitous sensor network have great rush in recent years. This paper deals the development of a sensor node with the dual interface which also has an RF wireless interface while has an Bluetooth interface used widely in present. This sensor node includes a Atmeg32 microcontroller, a Bluetooth module, a RF module. a temperature-humidity sensor. and I also develop the F/Ws controlling each modules with C language using GCC compiler. The sensor node developed can reaches 15m with Bluetooth interface and 60m with RF interface. It works stably with the voltage above 5V and it consumes currents 21mA average in idle mode, 63mA average in active mode.

• IEIE Transactions on Smart Processing and Computing
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• v.3 no.4
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• pp.221-225
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• 2014

Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2022.11a
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• pp.390-391
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• 2022

Recently, SpaceX, private enterprise dealing in space development company, has reported a plan for launching of low earth orbit satellites via Starlink Business, and launched 900 satellites until now. Concretely, it plans tp operate Ku/Ka band satellite, and launch 7,518 of V band satellites for broadband communication. Therefore, wireless communication service for ship will be provided, and various solutions will be offered through the low earth orbit satellites. In this work, we investigated RF characteristics of coplanar waveguide employing periodic 3D coupling structures, and examined its potential for a development of marine radio communication FISoC (fully-integrated system on chip) semiconductor device.

• Journal of the Korean Society of Radiology
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• v.12 no.2
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• pp.123-131
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• 2018

This study compared PENELOPE with measured values from low energy peak to high energy peak to reduce peak to compton ratio and continuum background spectrum using $^{60}Co$, $^{137}Cs$ and mixed volume source. In addition, the change in backscattering and compton edge efficiency was compared with that of PENELOPE through changes in the vicinity of low energy. The results from the mixed volume source are applied to the soil samples to determine how much the minimum detection limits of the soil samples are reduced in the suppression and unsuppressed mode. The compton suppression of the low energy region of $^{60}CO$ (1,173 keV) was considerable, and the Compton edge RF for the $^{137}Cs$ (661 keV) peak was 2.8. In particular, the $^{60}Co$ source emits coincidence gamma rays of 1,173.2 keV and 1,332.5 keV, so compton inhibition was reduced by approximately 21%. RF of compton edges of 1,173 keV and 1,332 keV emitted from a $^{60}Co$ source was 3.2 and 3.4, and the peak to compton edge ratio was improved to 8: 1. And Compared with Penelope, the uncertainty was well within 2%. In compton unsuppressed mode, MDA values of 661 keV, 1,173 keV and 1,332 keV were 0.535, 0.173 and 0.136 Bq/kg, respectively, but decreased in compton suppressed mode to 0.121, 0.00826 and 0.00728 Bq/kg. Thus, Compton suppressed could reduce the background radioactivity and the radioactivity contained in the detector itself.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.671-674
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• 2005

The series parasitic resistances ($R_s$, $R_g$, $R_d$, $R_{sub}$) of BSIM3v3 RF MOSFET macro model were directly extracted from measured S-parameters in the GHz region by using simple 2-port parameter equations. Also, overlap capacitance and junction capacitance parameters were extracted by tuning $S_{11}$, $S_{12}$, and $S_{22}$ respectively while DC-parameters and all parasitic resistances are fixed at previously extracted values. These data are verified to be accurate by observing good correspondence between modeled and measured S-parameters up to 10GHz.

• Journal of the Korean Applied Science and Technology
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• v.14 no.1
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• pp.103-107
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• 1997

This study was carried out to separate and identify the antioxidative substances in persimmon leaves. The antioxidative substances in persimmon leaves were extracted by methanol. The extract was fractionnated by SEP-PAK cartridge colum. From these results five fractions(F-I${\sim}$V) were obtained. Antioxidative activity of each fractions was examined by the DPPH methord. The F-II, III and IV showed antioxidative activity and among them F-II and F-III showed the strongest. Five frations were separated by TLC using ethylacetate : chloroform : formic acid : $H_2O$(8 : 1 : 1 : 1 v /v) as the solvent. From these results were obtained spots of Rf 0.71, 0.35 and 0.25. This spots were scraped from the plate and extracted by methanol. The extracts thuse obtained were used for examination of identify by TLC, UV /VIS-spectrophotometer and HPLC. Among them spot of Rf 0.71 were demonstrated to catechin and the spots of Rf 0.35 and 0.25 was suggested to polyphenol substances.