• Title/Summary/Keyword: RC회로

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Design of Boost Converter PFC IC for Unity Power Factor Achievement (단일 역률 달성을 위한 Boost Converter용 PFC IC 설계)

  • Jeon, In-Sun;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Jo, Hyo-Mun;Lee, Jong-Hwa
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.2
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    • pp.60-67
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    • 2010
  • We designed Average Current Control PFC IC which has make the average value of boost inductor current became the shape of sine wave. Designed IC has fixed frequency of 75kHz to meet EMI standard requirement. And also RC compensation loop has been designed into the error amp and the current amp, in order that it has wide bandwidth for high speed control. And we use the oscillator which generates by square wave and triangle wave, and add to UVLO, OVP, OCP, TSD which is in order to operate stability. We simulated by using Spectre of Cadence to verify the unity power factor function and various protection circuits and fabricated in a $1{\mu}m$ High Voltage(20V) CMOS process.

High Power W-band Power Amplifier using GaN/Si-based 60nm process (GaN/Si 기반 60nm 공정을 이용한 고출력 W대역 전력증폭기)

  • Hwang, Ji-Hye;Kim, Ki-Jin;Kim, Wan-Sik;Han, Jae-Sub;Kim, Min-Gi;Kang, Bong-Mo;Kim, Ki-chul;Choi, Jeung-Won;Park, Ju-man
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.22 no.4
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    • pp.67-72
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    • 2022
  • This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

Active-RC Channel Selection Filter with 40MHz Bandwidth and Improved Linearity (40MHz의 대역폭과 개선된 선형성을 가지는 Active-RC Channel Selection Filter)

  • Lee, Han-Yeol;Hwang, Yu-Jeong;Jang, Young-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.10
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    • pp.2395-2402
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    • 2013
  • An active-RC channel selection filter (CSF) with the bandwidth of 40MHz and the improved linearity is proposed in this paper. The proposed CSF is the fifth butterworth filter which consists of a first order low pass filter, two second order low pass filters of a biquad architecture, and DC feedback circuit for cancellation of DC offset. To improve the linearity of the CSF, a body node of a MOSFET for a switch is connected to its source node. The bandwidth of the designed CSF is selected to be 10MHz, 20MHz and 40MHz and its voltage gain is controlled by 6 dB from 0 dB to 24 dB. The proposed CSF is designed by using 40nm 1-poly 8-metal CMOS process with a 1.2V. When the designed CSF operates at the bandwidth of 40 MHz and voltage gain of 0 dB, the simulation results of OIP3, in-band ripple, and IRN are 31.33dBm, 1.046dB, and 39.81nV/sqrt(Hz), respectively. The power consumption and layout area are $450{\times}210{\mu}m^2$ and 6.71mW.

Low Pass Filter Design using CMOS Floating Resister (CMOS Floating 저항을 이용한 저역통과 필터의 설계)

  • 이영훈
    • Journal of the Korea Society of Computer and Information
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    • v.3 no.2
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    • pp.77-84
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    • 1998
  • The continuous time signal system by development of CMOS technology have been receiving consideration attention. In this paper, Low pass filter using CMOS floating resistor have been designed with cut off frequency for speech signal processing. Especially a new floating resistor consisting entirely of CMOS devices in saturation has been developed. Linearity within $\pm$0.04% is achieved through nonlineartiy via current mirrors over an applied range of $\pm$1V. The frequency response exceeds 10MHz, and the resistors are expected to be useful in implementing integrated circuit active RC filters. The low pass filter designed using this method has simpler structure than switched capacitor filter. So reduce the chip area. The characteristics of the designed low pass filter using this method are simulated by pspice program.

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Line Voltage Regulation of Urban Transit Systems Using Supercapacitors (슈퍼커패시터를 이용한 도시형 철도의 가선전압 안정화)

  • Son, Kyoung-Min;Choi, Jae-Ho;Kim, Hyung-Chul
    • The Transactions of the Korean Institute of Power Electronics
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    • v.14 no.6
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    • pp.481-487
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    • 2009
  • This paper proposes a regulation method of DC line voltage for urban transit system fluctuated during the acceleration or deceleration by using supercapacitor. Supercapacitor is modelled electrically under the assumption of three different time constants of RC circuits with variable capacitances depending on the voltage. And its parameters are determined by the experimental measurements. The energy storage system using supercapacitors is installed based on this model, and the proposed model is tested through the simulations and experiments, and the controller for charging and discharging is designed. Finally, it is tested at Kyoungsan test site for the urban light rail road system and the energy saving effect is evaluated economically.

One-Chip and Control System Design of Low Cost for Micro-stepping Drive of 5-Phase Stepping Motor (5상 스테핑 모터의 마이크로스텝 구동을 위한 저가형 전용 칩 및 제어시스템 설계)

  • 김명현;김태엽;안호균;박승규
    • The Transactions of the Korean Institute of Power Electronics
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    • v.9 no.1
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    • pp.88-95
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    • 2004
  • Micro stepping method is adopted in order to eliminate effectively the resonant phenomena and to increase the positional resolution. Exist micro-step method by using Sinusoidal waveform, drive circuit is complex by using micro controller and ROM, it have fault on cost Increase. This paper proposed trapezoidal current wave form for simple control circuit and micro stepping method by using a low cost controller. This paper proposed method verify by using CPLD(EPM9320RC208-15) of low cost. This paper make experiment that comparison of exist method and proposed method. This paper obstruct a escape of motor by using high speed detect.

Design of Broadband 12 ㎓ Active Frequency Doubler using PHEMT (PHEMT를 이용한 광대역 12 ㎓ 능동 주파수 체배기 설계)

  • 전종환;강성민;최재홍;구경헌
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.6
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    • pp.560-566
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    • 2004
  • In this paper, active frequency doubler with broadband characteristics from 6 ㎓ to 12 ㎓ was designed and fabricated using PHEMT. The designed frequency multiplier has a bias point near pinch-off and a proposed series RC circuit between bias line and input matching network far the improvement of stability. With 0 ㏈m input power, second harmonic of 1.7 ㏈m at 12 ㎓ -27.5 ㏈c suppression of 6 ㎓ fundamental, -18 ㏈c suppression of 18 ㎓ 3rd harmonic, and the 3 ㏈ output bandwidth of 1,8 ㎓ have been measured.

Unequal Multi-Section Power Divider using CPW and Offset Coupled Transmission Lines (CPW와 Offset 결합 전송선로를 이용한 비대칭 다단 분배기)

  • Choi, Jong-Un;Yoon, Young-Chul;Sung, Gyu-Je;Kim, Young
    • Journal of Advanced Navigation Technology
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    • v.23 no.4
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    • pp.309-315
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    • 2019
  • This paper proposes an implementation of unequal power divider with 1:3 and 1:4 splitting ratio in multi-section structure using CPW and offset coupled transmission line. The power divider consists of a multi-section transmission line and a circuit with parallel capacitors and resistors. A multi-section transmission line was implemented by decomposing a ${\lambda}/4$ single transmission line terminated by an arbitrary impedance and converging it with a multi-section transmission line shorter than $90^{\circ}$ electrical length, and RC parallel circuits were connected between transmission lines to obtain reflection coefficient of output port and isolation characteristics between the output port. In this way, it was confirmed that the transmission lines at the unequal power divider designed at 2 GHz were shorter than ${\lambda}/4$ and implemented at least 27% less than the conventional ones, and that the broadband characteristics could be obtained.

Accuracy Evaluation of the FinFET RC Compact Parasitic Models through LNA Design (LNA 설계를 통한 FinFET의 RC 기생 압축 모델 정확도 검증)

  • Jeong, SeungIk;Kim, SoYoung
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.11
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    • pp.25-31
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    • 2016
  • Parasitic capacitance and resistance of FinFET transistors are the important components that determine the frequency performance of the circuit. Therefore, the researchers in our group developed more accurate parasitic capacitance and resistance for FinFETs than BSIM-CMG. To verify the RF performance, proposed model was applied to design an LNA that has $S_{21}$ more than 10dB and center frequency more than 60GHz using HSPICE. To verify the accuracy of the proposed model, mixed-mode capability of 3D TCAD simulator Sentaurus was used. $S_{21}$ of LNA was chosen as a reference to estimate the error. $S_{21}$ of proposed model showed 87.5% accuracy compared to that of Sentaurus in 10GHz~100GHz frequency range. The $S_{21}$ accuracy of BSIM-CMG model was 56.5%, so by using the proposed model, the accuracy of the circuit simulator improved by 31%. This results validates the accuracy of the proposed model in RF domain and show that the accuracies of the parasitic capacitance and resistance are critical in accurately predicting the LNA performance.

Comparison of equivalent-circuit-model based SOC estimation using the EKF (등가회로 모델링 구성에 따른 확장칼만필터(EKF) 기반 SOC 추정성능 비교분석)

  • Lee, Hyun-jun;Park, Jong-hoo;Kim, Jong-hoon
    • Proceedings of the KIPE Conference
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    • 2014.11a
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    • pp.56-57
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    • 2014
  • 본 논문에서는 $LiCoO_2$ 원통형(cylindrical)셀을 확장칼만필터(extended Kalman filter; EKF) 추정알고리즘에 적용 시 등가회로모델 차이에 따른 SOC(State-of-charge) 추정성능의 비교 분석을 진행하였다. 첫 번째, 등가회로 모델의 성능을 좌우하는 RC-ladder의 개수에 따른 SOC 추정성능의 차이를 비교하였고, 두 번째, 모델 단순화에 따른 불가피한 모델의 에러를 줄이고자 사용되는 노이즈 모델(noise model) 및 데이터 리젝션(data rejection)의 유무에 따른 SOC 추정성능을 비교분석 하였다.

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