• 한국세라믹학회지
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• 제36권6호
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• pp.655-661
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• 1999

${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

• 한국세라믹학회지
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• 제39권7호
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• pp.693-698
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• 2002

반응소결 탄화규소의 잔류 실리콘 양을 최소화하기 위해 3성분계 탄화규소 분말을 혼합하여 최밀 충전 반음소결 탄화규소를 제조하였다. 기지상의 충전밀도 증가로 인해 반응소결 중 실리콘의 불완전 침윤이 발생하였으며, 이로 인한 잔류 기공은 조대 탄화규소 입자의 표면을 따라 존재함을 확인하였다. 불완전 침윤은 승온 중 분해되지 않고 남은 산화물이 실리콘의 용융 온도 이상에서 분해되어 생긴 고립기공에 의한 것으로 확인되었다. 기지상의 표면에 존재하리라 여겨지는 산화물을 제거하기 위해 침윤전 열처리 및 부식처리를 통해 완전침윤을 달성하였다.

• 정보보호학회지
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• 제9권2호
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• pp.45-58
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• 1999

역할기반 접근제어(RBAC)는 기업을 위한 응용분야에서 특별히 주목을 받고 있는 보안 기술이다. 그 이유는 RBAC이 대규모의 네트워크로 연결된 응용분야에서 보안 관리의 복잡성과 비용을 절감시켜 주기 때문이다. 본 기술 논문은 지금까지 연구된 RBAC의 연구 결과를 소개하고 향후의 과제에 대해 제시하는데 그 목적이 있다. 먼저 RBAC의 출현배경 과 기본 모델의 여러 요소들에 대해 소개한다. 그리고 RBSAC에 관련된 연구동향을 적용시 스템을 중심으로 분석한다. 특별히 Web 환경에서 RBAC의 적용에 초점을맞춘다. Web 환 경 특별히 인트라넷에서의 보안 필요성을 제시하고 여기에 적용된 RBSC(인터라넷-RBAC) 의 내용과 더불어 인트라넷-RBAC의 구현에 대해서도 소개한다. 마지막으로 향후에 추가적 으로 연구되어야할 과제들에 대해 분석한다.

• 한국세라믹학회지
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• 제48권5호
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• pp.373-378
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• 2011

The composite added with surface-coated chopped carbon fiber showed the microstructure of a 3 dimensional discretional arrangements. The fiber reinforced reaction bonded silicon carbide composite, containing the 50 vol% carbon fiber, showed the porosity of < 1 vol%, 3-point bending strength value of 250MPa and fracture toughness of 4.5 $MPa{\cdot}m^{1/2}$. As the content of carbon fiber was increased from 0 vol% to 50 vol% in the composite, fracture strength was decreased due to the increase of carbon fiber, which has a less strength than SiC and molten Si. On the other hand, the fracture toughness was increased with increasing the amount of carbon fiber. According to the polished microstructure, carbon fiber was shown to have a random 3 dimensional arrangement. Moreover, the fiber pull-out phenomenon was observed with the fractured surface, which can explain the increased fracture toughness of the composite containing high content of carbon fiber.

• 한국세라믹학회지
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• 제51권5호
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• pp.459-465
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• 2014

In this study, Si-SiC composites were fabricated using a Si melt infiltration method using ${\beta}$-SiC/C composite powders synthesized by the carbothermal reduction of $SiO_2-C$ precursors made from a TEOS and a phenol resin. The purity of the synthesized SiC-C composite powders was higher than 99.9993 wt% and the average particle size varied from 4 to $6{\mu}m$ with increasing carbon contents of the $SiO_2-C$ precursors. It was found that the Si-SiC composites fabricated in this study consist of ${\beta}$-SiC and residual Si, without any trace of ${\alpha}$-SiC. The 3-point bending strengths of the fabricated Si-SiC composites were measured and found to be higher than 550 MPa, although the density of the fabricated Si-SiC composite was less than $2.9g/cm^3$. The bending strengths and the densities of the fabricated Si-SiC composites were found to decrease with increasing C/Si mole ratios in the SiC-C composite powders. The specific resistivities of the Si-SiC composites fabricated using the SiC-C composite powders were less than $0.018{\Omega}cm$. With increasing C content in the SiC-C composite powders used for the fabrication of Si-SiC composites, the specific resistivity of the Si-SiC composites was found to slightly increase from 0.0157 to $0.018{\Omega}cm$.

• 한국전산유체공학회지
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• 제18권3호
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• pp.67-71
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• 2013

Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.