• 제목/요약/키워드: RAM-based

검색결과 769건 처리시간 0.021초

RAM 기반 신경망을 이용한 필기체 숫자 분류 연구 (A Study on Handwritten Digit Categorization of RAM-based Neural Network)

  • 박상무;강만모;엄성훈
    • 한국인터넷방송통신학회논문지
    • /
    • 제12권3호
    • /
    • pp.201-207
    • /
    • 2012
  • RAM 기반 신경망은 2진 신경망(Binary Neural Network, BNN)에 복수개의 정보 저장 비트를 두어 교육의 반복 횟수를 누적하도록 구성된 가중치를 가지지 않는(weightless) 신경회로망으로서 한 번의 교육만으로 학습이 이루어지는 효율성이 뛰어난 신경회로망이다. 지도 학습에 기반을 둔 RAM 기반 신경망은 패턴 인식 분야에는 우수한 성능을 보이는 반면, 비지도 학습에 의해 패턴을 구분해야 하는 범주화 연구에는 적합하지 않은 모델로 분류된다. 본 논문에서는 비지도 학습 알고리즘을 제안하여 RAM 기반 신경망으로 패턴 범주화를 수행한다. 제안된 비지도 학습 알고리즘에 의해 RAM 기반 신경망은 입력 패턴에 따라 자율 학습하여 스스로 범주를 생성할 수 있으며, 이를 통해 RAM 기반 신경망이 지도 학습과 비지도 학습이 모두 가능한 복합 모델임을 증명한다. 실험에 사용한 학습 패턴으로는 0에서 9까지의 오프라인 필기체 숫자로 구성된 MNIST 데이터베이스를 사용하였다.

Markov Process 기반 RAM 모델에 대한 파라미터 민감도 분석 (Parametric Sensitivity Analysis of Markov Process Based RAM Model)

  • 김영석;허장욱
    • 시스템엔지니어링학술지
    • /
    • 제14권1호
    • /
    • pp.44-51
    • /
    • 2018
  • The purpose of RAM analysis in weapon systems is to reduce life cycle costs, along with improving combat readiness by meeting RAM target value. We analyzed the sensitivity of the RAM analysis parameters to the use of the operating system by using the Markov Process based model (MPS, Markov Process Simulation) developed for RAM analysis. A Markov process-based RAM analysis model was developed to analyze the sensitivity of parameters (MTBF, MTTR and ALDT) to the utility of the 81mm mortar. The time required for the application to reach the steady state is about 15,000H, which is about 2 years, and the sensitivity of the parameter is highest for ALDT. In order to improve combat readiness, there is a need for continuous improvement in ALDT.

Performance Evaluation of a RAM based Storage System NGS

  • Kang, Yun-Hee;Kung, Jae-Ha;Cheong, Seung-Kook
    • International Journal of Contents
    • /
    • 제5권4호
    • /
    • pp.75-80
    • /
    • 2009
  • Recently high-speed memory array based on RAM, which is a type of solid-state drive (SSD), has been introduced to handle the input/output (I/O) bottleneck. But there are only a few performance studies on RAM based SSD storage with regard to diverse workloads. In this paper, we focus on the file system for RAM based memory array based NGS (Next Generation Storage) system which is running on Linux operating system. Then we perform benchmark tests on practical file systems including Ext3, ReiserFS, XFS. The result shows XFS significantly outperforms other file systems in tests that represent the storage and data requests typically made by enterprise applications in many aspects. The experiment is used to design the dedicated file system for NGS system. The results presented here can help enterprises improve their performance significantly.

RAM(신뢰도, MTBF) 데이터와 AHP 분석을 통한 함정분야 위험평가 방안 (An Objective Method of Risk Evaluation based on RAM(Reliability, MTBF) and AHP Data Analysis for Warship)

  • 함영훈;백용관
    • 한국군사과학기술학회지
    • /
    • 제21권5호
    • /
    • pp.714-721
    • /
    • 2018
  • This study proposes a risk evaluation method based on RAM and AHP data in order to prevent subjectivity of risk assessment. The risk assessment consist of Risk Likelihood(RL) and Risk Consequence(RC) in five levels. However, risk analysis of warships is hard to make a judgment because of small quantity production(Ship), long building period, equipment changes, complexity, various kinds of equipments, etc. The proposed RAM data and AHP analysis method are used to quantify each level quantitatively. RAM(MTBF) date is used to classify the RL, and AHP analysis is used to classify the RC. These scientific and data-based method will increase objectivity as well as efficiency of risk evaluation.

Reliability Design Based on System Performance-Cost Trade-off for Manufacturing facility

  • Hwang, Heung-Suk;Hwang, Gyu-Wan
    • International Journal of Reliability and Applications
    • /
    • 제2권4호
    • /
    • pp.269-280
    • /
    • 2001
  • The objective of this paper is to provide a model for effective implementation of costing RAM management in the design and procurement of production facility considering the system cost-performance trade-off. This research proposes a two-step approach of costing RAM design and test of system RAM for production facility. In Step 1, a static model is proposed to find an initial system configuration to meet the required performance based on system RAM and LCC and analyzes the trade-off relationships between various factors of RAM and LCC. In the second Step, we developed time and failure truncated models for system reliability test and analysis. For the computational purpose, we developed computer programs and have shown the sample results. By the sample test run, the proposed model has shown the possibilities to provide a good method to analyze system performance evaluation for both design and operational phase, This model can be applied to a wide variety of systems not only for costing RAM of the production facilities but also for the other kinds of equipment.

  • PDF

자기부상열차 RAM DATA 관리방안 (Review on RAM Data Management to Urban Maglev Transit)

  • 이창덕;강찬용
    • 한국철도학회:학술대회논문집
    • /
    • 한국철도학회 2007년도 추계학술대회 논문집
    • /
    • pp.191-196
    • /
    • 2007
  • This paper is reviewed RAM(Reliability, Availability and Maintainability) data table utilized for RAM data management to Urban Maglev Transit. As railway systems become more complex, the RAM requirements are reinforced to ensure that a design meets Reliability, Availability, Maintainability criteria. Therefore, it needs the efficient management for RAM data of railway system to meet RAM target. At this study, RAM data management format is suggested to ensure reliability and maintainability based on acquired experience for overseas rolling stock. This RAM data table and FMECA(Failure Mode Effect Criticality Analysis) table are useful to the calculation of MTBF(Mean Time Between Failure), MTBSF(Mean Time Between Service Failure) and Maintainability. Also, this RAM management table will be efficient to improve the RAM evaluation to Urban Maglev Transit.

  • PDF

PMMA-HfOx 유-무기 하이브리드 저항변화 메모리 제작 (Fabrication of PMMA-HfOx Organic-Inorganic Hybrid Resistive Switching Memory)

  • 백일진;조원주
    • 한국전기전자재료학회논문지
    • /
    • 제29권3호
    • /
    • pp.135-140
    • /
    • 2016
  • In this study, we developed the solution-processed PMMA-$HfO_x$ hybrid ReRAM devices to overcome the respective drawbacks of organic and inorganic materials. The performances of PMMA-$HfO_x$ hybrid ReRAM were compared to those of PMMA- and $HfO_x$-based ReRAMs. Bipolar resistive switching behavior was observed from these ReRAMs. The PMMA-$HfO_x$ hybrid ReRAMs showed a larger operation voltage margin and memory window than PMMA-based and $HfO_x$-based ReRAMs. The reliability and electrical instability of ReRAMs were remarkably improved by blending the $HfO_x$ into PMMA. An Ohmic conduction path was commonly generated in the LRS (low resistance state). In HRS (high resistance state), the PMMA-based ReRAM showed SCLC (space charge limited conduction). the PMMA-$HfO_x$ hybrid ReRAM and $HfO_x$-based ReRAM revealed the Pool-Frenkel conduction. As a result of flexibility test, serious defects were generated in $HfO_x$ film deposited on PI (polyimide) substrate. On the other hand, the PMMA and PMMA-$HfO_x$ films showed an excellent flexibility without defect generation.

Integration Process and Reliability for $SrBi_2$ $Ta_2O_9$-based Ferroelectric Memories

  • Yang, B.;Lee, S.S.;Kang, Y.M.;Noh, K.H.;Hong, S.K.;Oh, S.H.;Kang, E.Y.;Lee, S.W.;Kim, J.G.;Shu, C.W.;Seong, J.W.;Lee, C.G.;Kang, N.S.;Park, Y.J.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • 제1권3호
    • /
    • pp.141-157
    • /
    • 2001
  • Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

  • PDF

BCS 모델을 이용한 무기체계 RAM 요구조건 수립 (Establishing RAM Requirement based on BCS model for Weapon Systems)

  • 어성필;김성진;김대용
    • 한국군사과학기술학회지
    • /
    • 제13권1호
    • /
    • pp.67-76
    • /
    • 2010
  • RAM(Reliability, Availability, Maintainability) characteristics of weapon system is a part of Required Operational Capability, must be reasonable and achievable. In this study, we studied the criteria, important factors to establish RAM requirement and reviewed the current process. Then we propose the new process and method to establish the reasonable and achievable RAM requirement by BCS(Baseline Comparison System) model.

Holographic Lithography 방법을 적용한 Chalcogenide-based ReRAM(Resistance RAM) 소자의 개발에 관한 연구 (A Study on the Development of Chalcogenide-based ReRAM{Resistance RAM) Device with Holographic Lithography Method)

  • 남기현;정홍배
    • 한국전기전자재료학회논문지
    • /
    • 제22권12호
    • /
    • pp.1014-1017
    • /
    • 2009
  • In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.