• Agribusiness and Information Management
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• 제3권1호
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• pp.38-66
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• 2011

The dissemination process of agricultural research and development (R&D) results has somewhat different characteristics from that of typical R&D results. However, these characteristics are not adequately considered on the basis of an examination of the current performance system, the resulting management plans, and strategies for the application and dissemination of the results of agricultural R&D in Korea. The performance evaluation indicator exposed the problem of the inadequate consideration of the characteristics of each of these areas, particularly the lack of unified R&D-related institutions and the inadequacy of the system to monitor outcomes. To address these shortcomings in the agricultural R&D programs in Korea, the policies pertaining to agricultural R&D performance, results management, and dissemination in the U.S. and Japan were examined. Based on these investigations, we proposed strategies to improve the agricultural R&D policies in Korea.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.837-840
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• 2008

This paper studies the current regulator of LED Backlighting system for LCD. The proposed regulator and a typical regulator are introduced. To find out the characteristics of two regulators, Prototype samples of LED Backlighting system are made. Both the proposed regulator and a typical regulator are compared with electrical, thermal and optical characteristics each viewpoint.

• 한국콘텐츠학회논문지
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• 제22권5호
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• pp.383-392
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• 2022

문화기술은 메타버스와 같이 타 산업과의 융·복합화를 통해 새로운 가치 창출에 기여하고 있다. 정부도 문화콘텐츠산업의 경쟁력 확보를 위해 해당 분야의 연구개발에 적극적으로 투자하고 있다. 이에 본 연구에서는 국가연구개발 과제 중 문화기술의 R&D 효율성을 과제 특성별로 비교 분석하였다. 이를 위해 2016-2019년에 수행된 968개 국가연구개발 과제를 대상으로 자료포락분석과 비모수 검정을 하였다. 분석 결과 기술 분류별로는 문화유산, 문화콘텐츠, 생활문화 순으로 R&D 효율성이 높았다. 연구수행 주체별로는 대학, 민간기업, 공공 연구기관 순으로 R&D 효율성이 높았다. 또한, 타 기관과 협력한 경우 협력하지 않은 경우보다 R&D 효율성이 낮았다. 지역별로는 서울 지역에서 수행된 과제가 타 지역의 과제보다 R&D 효율성이 높았다. 즉, 문화기술분야의 국가연구개발 과제 특성에 따라 R&D 효율성 차이가 존재함을 확인하였다. 이는 문화기술에 대한 국가연구개발 과제를 기획할 때 이러한 특성을 고려하여 전략적으로 추진해야 함을 시사한다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1189-1192
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• 2009

Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.940-943
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• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.75-78
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• 2002

Difference in the structure of AC PDP cells makes the cells have various discharge characteristics. Therefore, a ramp-reset must be adjusted for the stable driving of AC PDP. If any ramp-reset can reduce the difference in discharge characteristics between cells, the conditions of the address discharge could become almost the same. It is very important to understand these to design a good driving waveform. In this paper, we proved the mentioned facts with the change of barrier rib heights.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.401-404
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• 2004

Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.69-75
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• 2003

Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

• 한국작물학회:학술대회논문집
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• 한국작물학회 1991년도 추계 학술대회지
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• pp.38-39
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• 1991

• Toxicological Research
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• 제31권2호
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• pp.219-219
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• 2015