• Agribusiness and Information Management
• /
• v.3 no.1
• /
• pp.38-66
• /
• 2011

The dissemination process of agricultural research and development (R&D) results has somewhat different characteristics from that of typical R&D results. However, these characteristics are not adequately considered on the basis of an examination of the current performance system, the resulting management plans, and strategies for the application and dissemination of the results of agricultural R&D in Korea. The performance evaluation indicator exposed the problem of the inadequate consideration of the characteristics of each of these areas, particularly the lack of unified R&D-related institutions and the inadequacy of the system to monitor outcomes. To address these shortcomings in the agricultural R&D programs in Korea, the policies pertaining to agricultural R&D performance, results management, and dissemination in the U.S. and Japan were examined. Based on these investigations, we proposed strategies to improve the agricultural R&D policies in Korea.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.837-840
• /
• 2008

This paper studies the current regulator of LED Backlighting system for LCD. The proposed regulator and a typical regulator are introduced. To find out the characteristics of two regulators, Prototype samples of LED Backlighting system are made. Both the proposed regulator and a typical regulator are compared with electrical, thermal and optical characteristics each viewpoint.

• The Journal of the Korea Contents Association
• /
• v.22 no.5
• /
• pp.383-392
• /
• 2022

Culture technology is contributing to the creation of new values through convergence with other industries. The government is also actively investing in R&D in this field to secure competitiveness. In this study, the R&D efficiency of culture technology is analyzed by characteristics. Data envelopment analysis and non-parametric tests are performed on 968 national research projects in 2016-2019. As a result, it is confirmed that there are a difference in R&D efficiency according to the characteristics of national research projects in culture technology sector. This suggests that when planning national research projects for culture technology, these characteristics should be taken into consideration and strategically promoted.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.1189-1192
• /
• 2009

Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07b
• /
• pp.940-943
• /
• 2005

The characteristics of a-Si:H TFTs with silicon oxide as passivation layer were reported. It was studied that the insulating characteristics and step coverage characteristics of low temperature silicon oxide before applying to a-Si:H TFT fabrications. With the optimum deposition conditions considering electrical and deposition characteristics, low temperature silicon oxide was applied to a-Si:H TFTs. The changes in characteristics of a-Si:H TFTs were analyzed after replacing silicon nitride passivation layer with low temperature silicon oxide layer. This low temperature silicon oxide can be adapted to high resolution a-Si:H TFT LCD panels.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.75-78
• /
• 2002

Difference in the structure of AC PDP cells makes the cells have various discharge characteristics. Therefore, a ramp-reset must be adjusted for the stable driving of AC PDP. If any ramp-reset can reduce the difference in discharge characteristics between cells, the conditions of the address discharge could become almost the same. It is very important to understand these to design a good driving waveform. In this paper, we proved the mentioned facts with the change of barrier rib heights.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.401-404
• /
• 2004

Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.2
• /
• pp.69-75
• /
• 2003

Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

• Proceedings of the Korean Society of Crop Science Conference
• /
• 1991.10a
• /
• pp.38-39
• /
• 1991

• Toxicological Research
• /
• v.31 no.2
• /
• pp.219-219
• /
• 2015