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A gas display device with electron emitter

  • Son, Seung-Hyun;Nam, Mun-Ho;Kim, Jung-Min;Cho, Sung-Hee;Jang, Sang-Hun;Kim, Gi-Young;Han, In-Su;Kim, Dae-Hyun;Cho, Young-Mi;Kim, Chang-Wook;Park, Hyoung-Bin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1253-1256
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    • 2007
  • A display device combining plasma display panel (PDP) and field emission display (FED) is proposed to achieve high luminous efficiency. The device can avoid the main energy loss channels of both PDP (ion loss) and FED (low CL efficiency). $2{\sim}6$”-diagonal test panels with carbon nano-tube (CNT) electron emitter and Xenon ambient gas showed the luminous efficiency of 4.14lm/W and brightness of $263cd/m^2$ at 35V (1kHz, 1% duty), indicating that it is a good candidate for the low voltage driven, highly efficient next generation display.

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Optimization of a-IGZO Thin-Film Transistors for OLED Applications

  • Chung, Hyun-Joong;Yang, Hui-Won;Kim, Min-Kyu;Jeong, Jong-Han;Ahn, Tae-Kyung;Kim, Kwang-Suk;Kim, Eun-Hyun;Kim, Sung-Ho;Im, Jang-Soon;Choi, Jong-Hyun;Park, Jin-Seong;Jeong, Jae-Kyeong;Mo, Yeon-Gon;Kim, Hye-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1097-1100
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    • 2008
  • We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility ($\mu_{FE}$) and subthreshold gate swing (S) are further enhanced by fine-tuning IGZO deposition condition.

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Integrated Gate Driver Circuit Using a-Si TFT with AC-Driven Dual Pull-down Structure

  • Jang, Yong-Ho;Yoon, Soo-Young;Kim, Binn;Chun, Min-Doo;Cho, Hyung-Nyuck;Cho, Nam-Wook;Sohn, Choong-Yong;Jo, Sung-Hak;Choi, Seung-Chan;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.944-947
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    • 2005
  • Highly stable gate driver circuit using a-Si TFT has been developed. The circuit has dual-pull down structure, in which bias stress to the TFTs is relieved by alternating applied voltage. The circuit has been successfully integrated in 4-in. QVGA and 14-in. XGA TFT-LCD with a normal a-Si process, which are stable for over 2,000 hours at $60^{\circ}C$. The enhancement of stability of the circuit is attributed to retarded degradation of pull-down TFTs by AC driving.

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5.0 inch WVGA Top Emission AMOLED Display for PDA

  • Lee, Kwan-Hee;Ryu, Seoung-Yoon;Park, Sang-Il;Ryu, Do-Hyung;Kim, Hun;Song, Seung-Yong;Chung, Bo-Yong;Park, Yong-Sung;Kang, Tae-Wook;Kim, Sang-Chul;Cho, Yu-Sung;Park, Jin-Woo;Kwon, Jang-Hyuk;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.7-10
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    • 2003
  • Samsung SDI has developed a full color 5.0" WVGA AMOLED display with top emission and a super fine pitch of 0.1365mm(l86ppi), the world's highest resolution OLED display ever reported to date. Scan driver circuits and demux circuit were integrated into the display panel, using low temperature poly-Si TFT CMOS technology, and data driver circuit were mounted using COG chips. Peak luminescence was greater than 300cd/ $m^2$ with power consumption of 500mW with 30% of the pixels on illuminated.

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Novel RGB Polymer Dispersed Liquid Crystal Display using Color Pigments.

  • Shim, S.H.;Choi, S.Y.;Baek, D.H.;Kim, W.;Choi, S.E.;Son, G.;Suh, D.H.;Choia, J.W.;Lee, J.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.784-787
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    • 2006
  • We have developed a RGB polymer dispersed liquid crystal film (RGB PDLC). To obtain the color display, color pigments are mixed in the prepolymer. We have presented an electro-optical performance of our cell and analyzed the electro optical properties for varying LC/ pre-polymer ratio and polymer type.

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Complete Assignment of the $^H1$ and $^{13}C$ NMR Spectra of a Sucrose Ester from Euphorbia Lathyris L.

  • Jung, Min-Hwan;Kim, Hyun-Sik;Sangdoo Ahn;Kim, Cheong-Taek;Jin, Mu-Hyun;Yim, Yong-Hyeon;Kim, Young-Kook;Jong hoa Ok
    • Journal of the Korean Magnetic Resonance Society
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    • v.4 no.2
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    • pp.125-132
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    • 2000
  • The detailed $^1$H and $^{13}$ C NMR assignments of a novel sucrose isovaleryl ester isolated from the seed of Euphorbia Lathyris L., were achieved by one-and two-dimensional techniques. The new sucrose ester was characterized as an $\alpha$-D-glucopyranoside, 3,4,6-tris-O-(3-methyl-1-oxobutyl)-$\beta$-D-fructofuranosyl, 2,6-bis(3-methylbutanoate); sucrose 4,7,8,11,12-pentaisovalerate by MS and NMR experiments.

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Microcrystalline Silicon for Thin Film Transistor

  • Milovzorov, D.;Kim, K.B.;Lisachenko, M.;Seo, J.W.;Lee, K.Y.;Chung, H.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1320-1322
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    • 2005
  • Microcrystalline silicon films were deposited on glass substrate by using plasma-enhanced chemical vapor deposition (PECVD) method. The crystalline volume fraction was estimated by means of Raman spectrometer with argon laser as light source. The high hydrogen dilution of silane gas was used for increase in content of crystal silicon phase.

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