한국정보디스플레이학회:학술대회논문집
- 2005.07b
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- Pages.1320-1322
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- 2005
Microcrystalline Silicon for Thin Film Transistor
- Milovzorov, D. (Corporate R&D Center, SAMSUNG SDI Co., LTD) ;
- Kim, K.B. (Corporate R&D Center, SAMSUNG SDI Co., LTD) ;
- Lisachenko, M. (Corporate R&D Center, SAMSUNG SDI Co., LTD) ;
- Seo, J.W. (Corporate R&D Center, SAMSUNG SDI Co., LTD) ;
- Lee, K.Y. (Corporate R&D Center, SAMSUNG SDI Co., LTD) ;
- Chung, H.K. (Corporate R&D Center, SAMSUNG SDI Co., LTD)
- Published : 2005.07.19
Abstract
Microcrystalline silicon films were deposited on glass substrate by using plasma-enhanced chemical vapor deposition (PECVD) method. The crystalline volume fraction was estimated by means of Raman spectrometer with argon laser as light source. The high hydrogen dilution of silane gas was used for increase in content of crystal silicon phase.
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