• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.173.1-173
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• 2003

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.15-20
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• 2007

We fabricated ZnO thin films on quartz substrate using pulsed laser deposition method and investigated structural and optical properties of ZnO thin films with various substrate temperatures. Regardless of the substrate temperature variation, all ZnO thin films had grown to (002) and the thin film deposited at 400 $^{\circ}C$ exhibited an excellent crystallinity having 0.24$^{\circ}$ of Full-Width-Half-Maximum (FWHM). In the result of photoluminescence property, UV and deep-level emission peaks were observed in all ZnO films and the emission peaks were changed with various substrate temperatures. An highest UV emission was exhibited on the specimen deposited at 400 $^{\circ}C$ and the FWHM of UV peak was 14 nm. The optical transmittance was about 85 % in visible region regardless of the substrate temperature. The comparison result of the bandgap energies obtained from optical transmittance and UV emission centers, the two values were about the same. From these results, it is found that UV emission center has close relationship with near band edge emission of ZnO thin film.

• Journal of the Optical Society of Korea
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• v.7 no.3
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• pp.166-173
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• 2003

This paper presents micromachining results on planar-lightwave-circuit (PLC) chips with Si substrate and the quartz substrate by using Ti:Sapphire femtosecond-pulsed laser. The ablation process with femtosecond laser pulses generates nothing of contamination, molten zone, microcracks, shock wave, delamination and recast layer. We also showed that the micromachine for PLC using femtosecond pulsed lasers is superior to that using nanosecond pulsed lasers. The insertion loss and the optical return loss of the 1 ${\times}$ 8 optical power splitters packaged with micromachined input- and output-port U-grooves were less than 11.0 ㏈ and more than 55 ㏈, respectively. The wavelength dependent loss (WDL) was distributed within $\pm$0.6 ㏈ and the polarization dependent loss (PDL) was less than 0.2 ㏈.

• Journal of Microbiology and Biotechnology
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• v.14 no.5
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• pp.1043-1046
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• 2004

The stability and electrochemical properties of a self-assembled layer of spinach ferredoxin on a quartz substrate and on a highly oriented pyrolytic graphite electrode were investigated. To fabricate the ferredoxin self-assembly layer, dimyristoylphosphatidylcholine was first deposited onto a substrate for ferredoxin immobilization. Surface analysis of the ferredoxin layer was carried out by atomic force microscopy to verify the ferredoxin immobilization. To verify ferredoxin immobilization on the lipid layer and to confirm the maintenance of redox activity, absorption spectrum measurement was carried out. Finally, cyclic-voltammetry measurements were performed on the ferredoxin layers and the redox potentials were obtained. The redox potential of immobilized ferredoxin had a formal potential value of -540 mV. It is suggested that the redox-potential measurement of self-assembled ferredoxin molecules could be used to construct a biosensor and biodevice.

• Bulletin of the Korean Chemical Society
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• v.22 no.3
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• pp.276-280
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• 2001

The self-assembled formation of octadecanethiol (CH3(CH2)17SH) on a gold substrate was studied using a quartz crystal microbalance (QCM) and a scanning tunneling microscope (STM). From the QCM measurements at vario us concentrations of octadecanethiol solutions in hexane and alcohol, the adsorption process of octadecanethiol onto Au was confirmed to consist of two steps as follows: (i) fast but disordered adsorption and (ii) a thermodynamically controlled rearrangement for uniform packing of octadecanethiol. Also, it was revealed that the adsorption rate became faster in ethanol than in hexane since less solubility of octadecanethiol in ethanol could help the formation of the monolayers. At 5 ${\times}$10-7 M solution, the monolayer formation was monitored by STM. The morphology of monolayer region was initially circular (diameter size: 7.26 $\pm$ 2.1 nm) and gradually changed to a stripe type after several minutes. At higher concentration, the self-assembled monolayer was formed immediately after the solution was introduced to a substrate.

• The Journal of the Acoustical Society of Korea
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• v.18 no.1
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• pp.10-15
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• 1999

We have studied a method to design and fabricate the Intermediate Frequency(IF) band pass filter with low shape factor which is used for CDMA base station on the 35°Y-cut X-propagation Quartz substrate. In order to fabricate a device of the low shape factor for the IF SAW filter on this substrate, we employed apodization weighted type interdigital transducer(IDT) as an input and withdrawal weighted type IDT as an output by using impulse modelling method. Also, using the Kaiser-Bessel window function, we have adopted 2200pairs and 1000pairs of input and oueut IDT respectively to minimize the effect of ripple. Furthermore, the width and the space of IDT finger are 3.6 ㎛ and 3.5 ㎛ respectively. Thus, we can have optimal results when the IDT thickness is 6000Å in consideration of the ratio of SAW's wavelength while it's aperture is 2mm for impedance matching. The fabricated SAW filter for CDMA had the property of almost 115.2MHz of a center frequency, less then 1.27MHz of bandwidth, less than 1.3 of shape factor, - l5dB of out band attenuation insertion loss and -45dB of rejection band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.17-17
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• 2010

Polycrystalline $CuInS_2$ thin films were performed from S/In/Cu Stacked elemental layer(SEL) method with post annealing. In thin method, the thin films were annealed in Vacuum of $10^{-3}$ torr or in S ambient. $CuInS_2$ thin films were manufctured by using the evaporation and the annealing with vacuum quartz furnace of sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate the annealing temperature and characteristics thereof were investigated. The physical properties of the thin film were investigated under various fabrication conditions including the substrate temperature annealing time by XRD, FE-SEM, and Hall measurement system.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.213-213
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• 2000

Direct laser vaporization of transition-metal(Co, Ni)/graphite composite pellet produced single wall carbon naotubes(SWNT) in the condensing vapor in a heated flow cylinder-type tube furnace, Transition metal/graphite composite pellet target was made by mixing graphite, Co, and Ni in 98:1:1 atomic weight ratios, pressing the mixed powder, and curing it. The target was placed in a tube furnace maintained at 1200$^{\circ}C$ and Ar inert collision gas continuously flowed into the tube. The 2nd harmonic, 532nm wavelength light from Nd-YAG laser was used to vaporize the tube. The carbon nanotubes produced by the laser vaporization were accumulated on quartz tube wall. The raw carbon nanotube materials were purified with surfactants(Triton X-100) in a ultrasonicator. These carbon nanotubes were analyzed using SEM, XRD, and Raman spectroscopic method. The carbon nanotube growth on the Ni-patterned Si substrate was investigated by the CVD process. Transition-metal, Ni and CH4 gas were used as a catalyst and a reactant gas, respectively. The structure and the phonon frequencies of the carbon nanotubes formed on the patterned Si substrate were measured by SEM and Raman spectrometer.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.619-623
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• 2006

Selective vapor deposition of conductive poly(3,4-ethylenedioxythiophene) (PEDOT), thin films has been carried out on self assembled monolayers patterned oxide substrate. Since the 3,4-ethylenedioxythiophene(EDOT) monomer can be polymerized only in the presence of oxidant such as $FeCl_3$, the PEDOT thin film is selectively deposited on patterned $FeCl_3$, which only adsorbs on the partly removed SAMs region due to the inability of $FeCl_3$ to adsorb on SAMs. Therefore, the partly removed SAMs can act as an adsorption layer for the $FeCl_3$ and also as a glue layer for the deposition of PEDOT, resulting in the significantly increased adhesion of PEDOT to $SiO_2$ substrate. The use of UV lithography and Cr patterned quartz mask provided the formation of SAMs patterns on oxide substrates, which allowed for the selective deposition of conductive PEDOT thin films.$^{oo}The$ new process was successfully developed for the selective deposition of PEDOT thin films on SAMs patterned oxide substrate, providing a new way for the patterning of vapor phase deposition of PEDOT thin films with accurate alignment and addressing the inherent adhesion issues between PEDOT and dielectrics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.872-875
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• 2003

Carbon nitride($CN_x$) thin films were deposited on quartz substrates using reactive RF magnetron sputtering system at uarious deposition conditions and investigated dielectric characteristics. Samples for capacitance measurements were of the MIM(Metal-Insulator-Metal) type devices. Aluminum film electrodes were prepared by a vacuum thermal evaporation method before and after the deposition of carbon nitride films. Capacitances were measured by a FLUKE PM6306 RCL Meter at room temperature. Current-voltage(I-V) characteristics and resistivity were measured by a CATS CA-EDA semiconductor test and analyzer. The carbon nitride films showed ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ etc. peaks through Raman and FTIR. Observed surface of film and side structure using SEM(Scanning Electron Microscope), and measured thickness of film by ${\alpha}-step$. We can find that the dielectric constant was the lowest value in 50% nitrogen ratio and the resistivity was the highest value in 70% nitrogen ratio.