• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.1
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• pp.49-58
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• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.319-323
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• 2002

1.55 ${\mu}m$multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factors ($\alpha{-factor}$) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width at half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes for which the value of the $\alpha{-factor}$ was small. As injection current increased, the FWHM of the far-field also increased regardless of the a-factor. This phenomenon was explained by reduction of filament spacing as injection current increased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.244.2-244.2
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• 2011

We introduce a novel and robust method for the preparation of nanocomposite multilayers, which allows the excellent photoluminescent (PL) properties as well as the accurate control over the composition and dimensions of multilayers. By exchanging the oleic acid stabilizers of CdSe@ZnS quantum dots (QDs) synthesized in organic solvent with 2-bromo-2-methylpropionic acid (BMPA) in the same solvent, these nanoparticles were be alternately deposited by nucleophilic substitution reaction with highly branched poly(amidoamine) dendrimer (PAMA) through layer-by-layer (LbL) assembly process. Our approach does not need to be transformed into the water-dispersible nanoparticles with electrostatic or hydrogen-bonding groups, which can deteriorate their inherent properties, for the built-up of multilayers. The nanocomposite multilayers including QDs exhibited the strong PL properties achieving densely packed surface coverage as well as long-term PL stability under atmospheric conditions in comparison with those of conventional LbL multilayers based on electrostatic interaction. Furthermore, we demonstrate that the flexible multilayer films with optical properties can be easily prepared using nucleophilic substitution reaction between bromo and amino groups in organic media. This robust and tailored method opens a new route for the design of functional film devices based on nanocomposite multilayers.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.440-444
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• 1996

In this paper, we report an InGaAs/InAlAs multi-quantum well (MQW) avalanche photodiode (APD) showing a performance suitable for 10 Gbps lightwave communications. In designing the device, emphasis is given on the effect of indiffusion of Be dopant from the highly doped field layer into the MQW multiplication region. It is found that a small amount of diffusion can alter the dark current and gain characteristics of the device significantly. A spacer used to restrain such indiffusion is shown effective in reducing dark current (500 nA at a gain of 10) while maintaining a high bandwidth (10 GHz at a gain of 10) devices grown by molecular beam epitaxy.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.1-10
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• 1996

Transparent conducting $SnO_2$-based thin films have been coated on float substrates such as fused quartz, and ceramic fiber cloths such as the Nexel and E-glass cloth from tin alkoxides by the sol-gel technique. Also, thin films of alternating layers of $SnO_2$ and $SiO_2$ have been fabricated by dip coating. The sheet resistance and average visible transmittance of the films were investigated in the aspect of the applications as transparent electrodes such as liquid crystal displays, photo-detectors and solar cells. The Nextel and E-glass cloths coated with antimony-doped tin oxide (ATO) had sheet resistance of as low as $20 \;ohm/{\Box}$ and $120ohm/\;{\Box}$, respectively. The promotion effects of additives as $La_2O_3$ and Pt on the ethanol gas sensing properties of the films were investigated in the aspects of the applications as an alcohol sensor and a breath alcohol checker. Possible evidence of quantum well effects in the oxide multilayers of $SnO_2$ and $SiO_2$ was investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1378-1380
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• 2005

The efficiency and the optical properties of the yellow organic light-emitting devices (OLEDs) were significantly affected by the existence of the multiple quantum well (MQW) structures consisting of N, N'- bis-(1-naphthyl)-N, N'-diphenyl-1,1-biphenyl-4,4'- diamine(NPB)/5,6,11,12 - tetraphenylnaphthacene (rubrene). The maximum efficiency and the luminance of OLEDs with 3-periods of the NPB/rubrene MQWs at 41.6 $mA/cm^2$ were 3.66 cd/A and 1524 $cd/m^2$, respectively, and their Commission Internationale de l'Eclairage chromaticity coordinates were (0.34, 0.55), which indicates a yellow color. These results indicate that the efficiencies of the OLEDs by using MQW emitting layers can be improved.

• Current Optics and Photonics
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• v.1 no.6
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• pp.579-586
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• 2017

In this paper, we theoretically demonstrate that semiconductor optical amplifiers (SOAs) with strong wavelength dependence of gain and phase are capable of all-optical inverted and non-inverted wavelength conversion (WC) over a wide range, with the assistance of an optical filter. First, the gain dynamics and phase dynamics in a common quantum well (QW) SOA with the $In_{0.53}Ga_{0.47}As/In_{0.7322}Ga_{0.2678}As_{0.5810}P_{0.4190}$ material system are found to be strongly dependent on wavelength, which is mainly related to the wavelength dependence of the differential gain and the differential refractive-index change. Second, the wavelength dependence in an all-optical wavelength converter based on the QW SOA cascaded with a detuning band pass filter is studied. Simulations show that the quality of the converted signal has little dependence on the operation wavelength. Both inverted and non-inverted WC can be achieved, over a large wavelength range. Therefore, although the gain and phase change are strongly wavelength-dependent, the effects of this dependence can be erased by appropriate optical filtering.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2903-2908
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• 2010

Protein S-nitrosation is common in cells under nitrosative stress. In order to model proteins with S-nitrosocysteine (CysSNO) residues, we first developed an Amber force field for S-nitrosoethanethiol (EtSNO) and then transferred it to CysSNO. Partial atomic charges for EtSNO and CysSNO were obtained by a restrained electrostatic potential approach to be compatible with the Amber-99 force field. The force field parameters for bonds and angles in EtSNO were obtained from a generalized Amber force field (GAFF) by running the Antechamber module of the Amber software package. The GAFF parameters for the CC-SN and CS-NO dihedrals were not accurate and thus determined anew. The CC-SN and CS-NO torsional energy profiles of EtSNO were calculated quantum mechanically at the level of B3LYP/cc-pVTZ//HF/6-$31G^*$. Torsional force constants were obtained by fitting the theoretical torsional energies with those obtained from molecular mechanics energy minimization. These parameters for EtSNO reproduced, to a reasonable accuracy, the corresponding torsional energy profiles of the capped tripeptide ACE-CysSNO-NME as well as their structures obtained from quantum mechanical geometry optimization. A molecular dynamics simulation of myoglobin with a CysSNO residue produced a well-behaved trajectory demonstrating that the parameters may be used in modeling other S-nitrosated proteins.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.1-8
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• 1990

We made a 12-Laser Diode Array consisting of 12 Graded Index Separate Confinement (GRINSCH) InGaAs/Inp Buried Heterostructure 4 Quantum Well Laser Diodes and examined the potential of controlling lasing operation of each laser diode by the voltage to its electroabsorption region. Using Si V-Groove with 12 V-grooves, a 12-Laser Diode Array, and 12 optical fibers, we investigated the various characteristics of each laser diode by changing the voltage to its electro-absorption region. Finally, we thought over the promising way of implementing optical local area communication between electric circuit boards or between subscribers and a central office using a 12-Laser Diode Array, Si V-groove, and optical fibers.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1280-1282
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• 1993

We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure, using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers, so that it is better suited to explain experimental results. The structure used is an $Al_{0.5}Ga_{0.5}$As/GaAs/$Al_{0.5}Ga_{0.5}As$ single quantum well. In this work, we estimate the theoretical current-voltage characteristics, and then, the dependence of the current-voltage curves on the thickness of undoped spacer layers.