Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1993.07b
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- Pages.1280-1282
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- 1993
Numerical Analysis of I-V Curves of RTDs with AlGaAs/GaAs Structure by Self-consistent Method
Self-consistent법에 의한 AlGaAs/GaAs구조 공명터널링 다이오드의 전기적 특성 해석
- Kim, S.J. (electrical eng. of Korea Univ.) ;
- Park, G.Y. (electrical eng. of Korea Univ.) ;
- Yoo, H.S. (electrical eng. of Korea Univ.) ;
- Yi, S.H. (electrical eng. of Korea Univ.) ;
- Choi, B.G. (electrical eng. of Gongjoo University) ;
- Sung, Y.K. (electrical eng. of Korea Univ.)
- 김성진 (고려대학교 전기공학과) ;
- 박근영 (고려대학교 전기공학과) ;
- 유환성 (고려대학교 전기공학과) ;
- 이승환 (고려대학교 전기공학과) ;
- 최복길 (공주대학교 전기공학과) ;
- 성영권 (고려대학교 전기공학과)
- Published : 1993.07.18
Abstract
We investigated theoretically the current-voltage characteristics of resonant tunneling diodes with a single quantum well structure, using a self-consistent method. This method is a numerical analysis which is able to include the effects of the undoped spacer layer and the band bending by charge accumulation and depletion on the contact layers, so that it is better suited to explain experimental results. The structure used is an
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