Filamentation and α-factor of broad area laser diodes |
Han, Il-Ki
(Nano Devices Research Center Korea Institute of Science and Technology)
Her, Du-Chang (Nano Devices Research Center Korea Institute of Science and Technology) Lee, Jung-Il (Nano Devices Research Center Korea Institute of Science and Technology) Lee, Joo-In (Nanosurface Group, Korea Research Institute of Standards and Science) |
1 | W. P. Latham, W. T. Cooley, G. J. Vansuch, and T. C. Salvi, “High-Power Semiconductor Lasers: Applications and Progress,” in Advanced High-Power Lasers, SPIE, Osaka, Japan , 1999, pp. 34-44. |
2 | Z. Dai, R. Michalzik, P. Unger, and K. J. Ebeling, “Numerical simulation of broad-area high-power semiconductor laser amplifiers,” IEEE J. Quantum. Electron., vol. 33, no. 12, pp. 2240-2254, 1997. DOI ScienceOn |
3 | B. Zhao, T. R. Chen, S. Wu, Y. H. Zhuang, Y. Yamada, and A. Yariv, “Direct measurement of linewidth enhancement factors in quantum well lasers of different quantum well barrier heights,” Appl. Phys. Lett., vol. 62, no. 14, pp. 1591-1593, 1993. DOI ScienceOn |
4 | J. Stohs, D. J. Gallant, D. J. Bossert, and S. R. J. Brueck, “Epitaxial structure dependence of the linewidth enhancement factor in GaAs and inGaAs quantum well lasers,” Proc. SPIE, vol. 2994, pp. 542-551, 1997. DOI |
5 | B. W. Hakki and T. L. Paoli, “Gain spectra in GaAs double heterostructure injection lasers,” J. Appl. Phys., vol. 46, no. 3, pp. 1296-1306, 1975. DOI ScienceOn |
6 | B. W. Hakki and T. L. Paoli, “Gain spectra in GaAs double heterostructure injection lasers,” J. Appl. Phys., vol. 46, no. 3, pp. 1296-1306, 1975. DOI ScienceOn |
7 | J. R. Marciante and G. P. Agrawal, “Nonlinear mechanisms of filamentation in broad-area semiconductor lasers,” IEEE J. Quantum Electron., vol. 32, no. 4, pp. 590-596, 1996. DOI ScienceOn |