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http://dx.doi.org/10.3807/KJOP.2002.13.4.319

Filamentation and α-factor of broad area laser diodes  

Han, Il-Ki (Nano Devices Research Center Korea Institute of Science and Technology)
Her, Du-Chang (Nano Devices Research Center Korea Institute of Science and Technology)
Lee, Jung-Il (Nano Devices Research Center Korea Institute of Science and Technology)
Lee, Joo-In (Nanosurface Group, Korea Research Institute of Standards and Science)
Publication Information
Korean Journal of Optics and Photonics / v.13, no.4, 2002 , pp. 319-323 More about this Journal
Abstract
1.55 ${\mu}m$multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factors ($\alpha{-factor}$) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width at half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes for which the value of the $\alpha{-factor}$ was small. As injection current increased, the FWHM of the far-field also increased regardless of the a-factor. This phenomenon was explained by reduction of filament spacing as injection current increased.
Keywords
semiconductor laser diodes; linewidth enhancement factor ($\alpha{-factor}$); filamentation;
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