• Resources Recycling
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• v.32 no.3
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• pp.3-8
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• 2023

This study discussed production, demand, and future prospects of rubidium, which is an alkali group metal that is highly reactive to various media and requires carefulness in handling, but no significant environmental hazard of rubidium has been reported yet. Rubidium is used in various fields such as optoelectronic equipment, biomedical, and chemical industries. Because of difficulty in production as well as limited demand, the transaction price of rubidium is relatively high, but its detail information such as market status and potential growth is uncertain. However, if the mass production of versatile ultra-high-performance equipment such as quantum computers and the necessity of rubidium use in the equipment are confirmed, there is a possibility that the rubidium market will expand in the future. Rubidium is often found together with lithium, beryllium, and cesium, and may be present in granite containing minerals such as lepidolite and pollucite, as well as in seawater and industrial waste. Several technologies such as acid leaching, roasting, solvent extraction, and adsorption are used to recover rubidium. The maximum recovery efficiency of the rubidium from the sources and the processing above is generally high, but, in many practices, rubidium is not the main recovery target, and therefore the actual recovery effects should depend on presence of other valuable components or impurities, together with recovery costs, energy consumption, environmental issues, etc. In conclusion, although the current production and consumption of rubidium are limited, with consideration of the possible market fluctuations according to the emergence of large-scale demand sources, etc., further investigations by related institutions should be necessary.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.775-782
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• 2014

The importance of including spin-orbit interactions for the correct description of structures and vibrational frequencies of haloiodomethanes is demonstrated by density functional theory calculations with spin-orbit relativistic effective core potentials (SO-DFT). The vibrational frequencies and the molecular geometries obtained by SO-DFT calculations do not match with the experimental results as well as for other cations without significant relativistic effects. In this sense, the present data can be considered as a guideline in the development of the relativistic quantum chemical methods. The influence of spin-orbit effects on the bending frequency of the cation could well be recognized by comparing the experimental and calculated results for $CH_2BrI$ and $CH_2ClI$ cations. Spin-orbit effects on the geometries and vibrational frequencies of $CH_2XI$ (X=F, Cl, Br, and I) neutral are negligible except that C-I bond lengths of haloiodomethane neutral is slightly increased by the inclusion of spin-orbit effects. The $^2A^{\prime}$ and $^2A^{{\prime}{\prime}}$ states were found in the cations of haloiodomethanes and mix due to the spin-orbit interactions and generate two $^2E_{1/2}$ fine-structure states. The geometries of $CH_2XI^+$ (X=F and Cl) from SO-DFT calculations are roughly in the middle of two cation geometries from DFT calculations since two cation states of $CH_2XI$ (X=F and Cl) from DFT calculations are energetically close enough to mix two cation states. The geometries of $CH_2XI^+$ (X=Br and I) from SO-DFT calculations are close to that of the most stable cation from DFT calculations since two cation states of $CH_2XI$(X=Br and I) from DFT calculations are energetically well separated near the fine-structure state minimum.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.449-455
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• 1993

In order to investigate the improvements of relatively poor characteristics of short wave length AlGaAs/GaAs laser diodes which are useful as a light source for short distance communication systems, the low temperature $(<680^{\circ}C)$ grown AlGaAs/GaAs GRINSCH-QW laser diodes by molecular beam epitaxy have been studied by photoluminescence as a function of rapid thermal annealing (RTA) temperature. It is shown that guantum well photoluminescence intensity increased substantially by a factor of 10 after RAT at $950^{\circ}C$ for 10 sec. This is related to the reduction of non-radiative recombination in the guantum well region. The threshold current of annealed laser diode is reduced by a factor, of 4, confirming the improvement of laser diode quality by rapid thermal annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.300.2-300.2
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• 2014

테라헤르쯔(terahertz : THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지(meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한(low-temperature grown : LT) InGaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 LT-InGaAs:Be/InAlAs multi quantum well (MQW)를 well과 barrier를 가각 $10{\mu}m$ 씩 100주기 성장을 하였고 Ti와 Au를 각각 30, $200{\mu}m$로 dipole antenna를 제작 하였다. 이 때 Ti:sapphire femto-pulse laser (30 fs/90 MHz)를 excitation source로 사용하였을 때 9000 pA로 LT-InGaAs epilayer (180 pA)보다 50배 이상 큰 전류 신호를 얻을 수 있었다. THz 발생과 검출을 초소형, 초경량, 고효율로 하기 위해서는 fiber-optic를 이용해야 하는데 이때 분산과 산란 손실이 가장 적은 1550 nm 대역에서 많은 연구가 이루어 졌다. 780, 1560 nm의 mode-locking laser (90 fs/100 MHz)를 사용하여 현재 많이 이용되고 있는 Ti:sapphire femto-pulse laser와 비교하여 THz 특성 변화를 확인하는 연구를 진행 하고 있다.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.119-122
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• 1995

We have measured the magnetic susceptibilities of a CuF/sub 2/ .center dot. 2H/sub 2/O sample by means of the SQUID(superconducting quantum interference device) at the magnetic fields of 0.5 T and 1 mT, in the temperature range 5-300 K. The sample was found to contain some nonmagnetic calcium and magnesium impurities by the elemental analysis. Our measurements differ from known results for pure Cu F/sub 2/ .center dot. 2H/sub 2/O and are well explained by the effect of the nonmagnetic impurities in our sample. The purity of our sample derived from the temperature dependence of the susceptibilities was compared with that from the elemental analysis.

• Journal of Information Display
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• v.9 no.3
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• pp.23-27
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• 2008

This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.

• Korean Journal of Optics and Photonics
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• v.23 no.1
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• pp.42-51
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• 2012

In this paper, injection-locking characteristics versus active layer structures in Fabry-Perot laser diodes (FP-LD) are compared. TE and TM gain spectra and peak gains versus carrier density in polarized and unpolarized multiple quantum well structures and in an unpolarized bulk structure are calculated. The calculated gain parameters are applied to a time-domain large-signal model to simulate the injection-locking characteristics. The results show that RIN in unpolarized FD-LDs is about 3 dB lower than that in a polarized FP-LD and that the eye characteristics of the unpolarized FP-LD are much better than those of the polarized FP-LD.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2737-2740
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• 2013

The layered $KTiNbO_5$ was successfully synthesized with titanium(IV) isopropoxide and niobium oxalate by a novel polymerized complex (PC) method. The morphology and structure of the as-prepared sample was characterized by means of High-Resolution Transmission Electron Microscope, powder X-ray diffraction, and Laser Raman Spectroscopy. The spectral response characteristic was recorded by using UV-vis Diffuse Reflectance Spectroscopy. Results show that $KTiNbO_5$ as-prepared by PC method presents an uniform morphology of nano-particles, the mean particle sizes is ca. 28 nm corresponding to the (002), and the crystal structure can be well indexed to the orthorhombic phase. The sample as-prepared by PC method has higher band gap energy than that of the sample prepared by a solid-state reaction method due to the quantum size effect.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.228-239
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• 2004

In this paper, an analytical model accounting for the quantum effects in MOSFETs has been developed to study the behaviour of $high-{\kappa}$ dielectrics and to calculate the threshold voltage of the device considering two dielectrics gate stack. The effect of variation in gate stack thickness and permittivity on surface potential, inversion layer charge density, threshold voltage, and $I_D-V_D$ characteristics have also been studied. This work aims at presenting a relation between the physical gate dielectric thickness, dielectric constant and substrate doping concentration to achieve targeted threshold voltage, together with minimizing the effect of gate tunneling current. The results so obtained are compared with the available simulated data and the other models available in the literature and show good agreement.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.85.2-85.2
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• 2016

With the advent of ultra-short high-intense XFEL (X-ray Free Electron Laser), time-resolved dynamics has become of great importance in exploring femtosecond real-world phenomena of nanoscience and biology. These include studying the response of materials to femtosecond laser excitation and investigating the interaction of XFEL itself with condensed matter. A variety of dynamic phenomena have been investigated such as radiation damage, ultrafast melting process, non-equilibrium phase transitions caused by orbital-lattice-spin couplings. As far as bulk materials are concerned, the sample size has no effect on the following dynamic process. As a result, imaging information is not required by and large. If the sample size is of tens of nanometers, however, sample starts to experience quantum confinement effect which, in turn, affects the following dynamic process. Therefore, to understand the fundamental dynamic phenomena in nano-science, time-resolved imaging information is essential. In this talk, we will briefly introduce scientific highlights achieved in XFEL-based dynamics. In case of bio-imaging, recent scientific topics will be mentioned as well. Finally, we will aim to present feasible topics in ultrafast time-resolved imaging and to discuss the future plan of CXI beamline at PAL-XFEL.