• Title/Summary/Keyword: Quantum simulation

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Quantum Bee Colony Optimization and Non-dominated Sorting Quantum Bee Colony Optimization Based Multi-relay Selection Scheme

  • Ji, Qiang;Zhang, Shifeng;Zhao, Haoguang;Zhang, Tiankui;Cao, Jinlong
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.11 no.9
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    • pp.4357-4378
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    • 2017
  • In cooperative multi-relay networks, the relay nodes which are selected are very important to the system performance. How to choose the best cooperative relay nodes is an optimization problem. In this paper, multi-relay selection schemes which consider either single objective or multi-objective are proposed based on evolutionary algorithms. Firstly, the single objective optimization problems of multi-relay selection considering signal to noise ratio (SNR) or power efficiency maximization are solved based on the quantum bee colony optimization (QBCO). Then the multi-objective optimization problems of multi-relay selection considering SNR maximization and power consumption minimization (two contradictive objectives) or SNR maximization and power efficiency maximization (also two contradictive objectives) are solved based on non-dominated sorting quantum bee colony optimization (NSQBCO), which can obtain the Pareto front solutions considering two contradictive objectives simultaneously. Simulation results show that QBCO based multi-relay selection schemes have the ability to search global optimal solution compared with other multi-relay selection schemes in literature, while NSQBCO based multi-relay selection schemes can obtain the same Pareto front solutions as exhaustive search when the number of relays is not very large. When the number of relays is very large, exhaustive search cannot be used due to complexity but NSQBCO based multi-relay selection schemes can still be used to solve the problems. All simulation results demonstrate the effectiveness of the proposed schemes.

Measurement of Neutron Production Double-differential Cross-sections on Carbon Bombarded with 430 MeV/Nucleon Carbon Ions

  • Itashiki, Yutaro;Imahayashi, Youichi;Shigyo, Nobuhiro;Uozumi, Yusuke;Satoh, Daiki;Kajimoto, Tsuyoshi;Sanami, Toshiya;Koba, Yusuke;Matsufuji, Naruhiro
    • Journal of Radiation Protection and Research
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    • v.41 no.4
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    • pp.344-349
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    • 2016
  • Background: Carbon ion therapy has achieved satisfactory results. However, patients have a risk to get a secondary cancer. In order to estimate the risk, it is essential to understand particle transportation and nuclear reactions in the patient's body. The particle transport Monte Carlo simulation code is a useful tool to understand them. Since the code validation for heavy ion incident reactions is not enough, the experimental data of the elementary reaction processes are needed. Materials and Methods: We measured neutron production double-differential cross-sections (DDXs) on a carbon bombarded with 430 MeV/nucleon carbon beam at PH2 beam line of HIMAC facility in NIRS. Neutrons produced in the target were measured with NE213 liquid organic scintillators located at six angles of 15, 30, 45, 60, 75, and $90^{\circ}$. Results and Discussion: Neutron production double-differential cross-sections for carbon bombarded with 430 MeV/nucleon carbon ions were measured by the time-of-flight method with NE213 liquid organic scintillators at six angles of 15, 30, 45, 60, 75, and $90^{\circ}$. The cross sections were obtained from 1 MeV to several hundred MeV. The experimental data were compared with calculated results obtained by Monte Carlo simulation codes PHITS, Geant4, and FLUKA. Conclusion: PHITS was able to reproduce neutron production for elementary processes of carbon-carbon reaction precisely the best of three codes.

Efficient design of a ∅2×2 inch NaI(Tl) scintillation detector coupled with a SiPM in an aquatic environment

  • Kim, Junhyeok;Park, Kyeongjin;Hwang, Jisung;Kim, Hojik;Kim, Jinhwan;Kim, Hyunduk;Jung, Sung-Hee;Kim, Youngsug;Cho, Gyuseong
    • Nuclear Engineering and Technology
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    • v.51 no.4
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    • pp.1091-1097
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    • 2019
  • After the Fukushima accident in 2011, there has been increased public concern about radioactive contamination of water resources through fallout in neighboring countries. However, there is still no available initial response system that can promptly detect radionuclides. The purpose of this research is to develop the most efficient gamma spectrometer to monitor radionuclides in an aquatic environment. We chose a thallium-doped sodium iodide (NaI(Tl)) scintillator readout with a silicon photo multiplier (SiPM) due to its compactness and low operating voltage. Three types of a scintillation detector were tested. One was composed of a scintillator and a photomultiplier tube (PMT) as a reference; another system consisted of a scintillator and an array of SiPMs with a light guide; and the other was a scintillator directly coupled with an array of SiPMs. Among the SiPM-based detectors, the direct coupling system showed the best energy resolution at all energy peaks. It achieved 9.76% energy resolution for a 662 keV gamma ray. Through additional experiments and a simulation, we proved that the light guide degraded energy resolution with increasing statistical uncertainty. The results indicated that the SiPM-based scintillation detector with no light guide is the most efficient design for monitoring radionuclides in an aquatic environment.

Simulation Results of the 4 stage Single Flux Quantum Voltage Multiplier (4 stage 단자속 양자 Voltage Multiplier의 Simulation 결과)

  • Chu, Hyung-Gon;Jung, Ku-Rak;Kang, Joon-Hee
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.238-241
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    • 1999
  • Analog-to-digital converter has attracted a lot of interests as one of the most prospective area of an application of Josephson Junction technology. Recently, the development of a digital-to-analog converter has been pursued to achieved the high performance. One of the main advantage in using single flux quantum logic in a digital-to-analog converter is the low voltage drop in a single Josephson Junction and hence the resolution of the output voltage of this digital-to-analog converter can be very high. In this work, we have used a software, called WRspice, to study a voltage multiplier circuit which is the basic block in building a digital-to-analog circuit. In simulation, we operated a voltage multiplier with .4 Josephson Junctions per stage and studied the dependence on the circuit bias currents and the circuit inductors of the voltage multiplier. Our simulation results showed a fast operation and reasonable circuit margins.

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Introduction to Molecular Dynamic Simulation Employing a Reactive Force Field (ReaxFF) for Simulating Chemical Reactions of SiHx Radicals on Si Surfaces

  • Han, Sang-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.93-93
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    • 2010
  • In this talk, I will introduce a reactive force field (ReaxFF) molecular dynamics (MD) simulation. In contrast to common MD simulations with empirical FFs, we can predict chemical reactions (bond breaking and formation) in large scale systems with the ReaxFF simulation where all of the ReaxFF parameters are from quantum mechanical calculations such as density functional theory to provide high accuracy. Accordingly, the ReaxFF simulation provides both accuracy of quantum mechanical calculations and description of large scale systems of atomistic simulations at the same time. Here, I will first discuss a theory in the ReaxFF including the differences from other empirical FFs, and then show several applications for studying chemical reactions of SiHx radicals on Si surfaces, which is an important issue in Si process.

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Review on the Computer Simulation Tools for Polymeric Membrane Researches (고분자 분리막 연구를 위한 전산모사 도구 소개)

  • Choi, Chan Hee;Park, Chi Hoon
    • Membrane Journal
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    • v.30 no.4
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    • pp.242-251
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    • 2020
  • Computer simulation tools mainly used for polymer materials and polymeric membranes are divided into various fields depending on the size of the object to be simulated and the time to be simulated. The computer simulations introduced in this review are classified into three categories: Quantum mechanics (QM), molecular dynamics (MD), and mesoscale modeling, which are mainly used in computational material chemistry. The computer simulation used in polymer research has different research target for each kind of computational simulation. Quantum mechanics deals with microscopic phenomena such as molecules, atoms, and electrons to study small-sized phenomena, molecular dynamics calculates the movement of atoms and molecules calculated by Newton's equation of motion when a potential or force of is given, and mesoscale simulation is a study to determine macroscopically by reducing the computation time with large molecules by forming beads by grouping atoms together. In this review, various computer simulation programs mainly used for polymers and polymeric membranes divided into the three types classified above will be introduced according to each feature and field of use.

Simulation of Channel Dimension Dependent Conduction and Charge Distribution Characteristics of Silicon Nanowire Transistors using a Quantum Model (양자효과를 고려한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션)

  • Hwang, Min-Young;Choi, Chang-Yong;Moon, Kyoung-Sook;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.728-731
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    • 2009
  • We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.

A Study on Attack against NTRU Signature Implementation and Its Countermeasure (NTRU 서명 시스템 구현에 대한 오류 주입 공격 및 대응 방안 연구)

  • Jang, Hocheol;Oh, Soohyun;Ha, Jaecheol
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.28 no.3
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    • pp.551-561
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    • 2018
  • As the computational technology using quantum computing has been developed, several threats on cryptographic systems are recently increasing. Therefore, many researches on post-quantum cryptosystems which can withstand the analysis attacks using quantum computers are actively underway. Nevertheless, the lattice-based NTRU system, one of the post-quantum cryptosystems, is pointed out that it may be vulnerable to the fault injection attack which uses the weakness of implementation of NTRU. In this paper, we investigate the fault injection attacks and their previous countermeasures on the NTRU signature system and propose a secure and efficient countermeasure to defeat it. As a simulation result, the proposed countermeasure has high fault detection ratio and low implementation costs.

A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

  • Kim, Ji-Hyun;Sun, Woo-Kyung;Park, Seung-Hye;Lim, Hye-In;Shin, Hyung-Soon
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.4
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    • pp.278-286
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    • 2011
  • In this paper, we present a compact model of gate-voltage-dependent quantum effects in short-channel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson's equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths ($L_g$) and radii (R). Schr$\ddot{o}$dinger's equation was solved analytically for a one-dimensional (1-D) quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation.

Optimization of the InGaN/GaN quantum well structure for 470 mm RC-LED with variation of quantum well thickness and Indium composition (양자우물 두께와 인듐조성 변화에 의한 470 mm RC-LED InGaN/GaN 양자우물 구조의 최적화)

  • Im, Jae-Mun;Park, Chang-Yeong;Park, Gwang-Uk;Lee, Yong-Tak
    • Proceedings of the Optical Society of Korea Conference
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    • 2009.02a
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    • pp.509-510
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    • 2009
  • The optical gain of InGaN/GaN multi quantum well (MQW) resonant-cavity light-emitting diode (RC-LED) with different Indium composition and well width in the multi-quantum well was investigated. The optimized optical gain was obtained by simulating active region InGaN/GaN with some test values of well width and Indium composition. By simulation tool, we could simulate on several cases, and then we got exact well width and Indium composition that makes optical gain maximum due to the short wavelength of 470 nm for blue light emission.

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