• Title/Summary/Keyword: Quantum effect

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Time-Resolved Photoluminescence Measurement of Frenkel-type Excitonic Lifetimes in InGaN/GaN Multi-quantum Well Structures

  • Shin, Gwi-Su;Hwang, Sung-Won;Kim, Keun-Joo
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.5
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    • pp.19-23
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    • 2003
  • Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

Changes of Electrical Properties of Graphene upon Introduction of Structural Defects and Gas Exposure

  • Kim, Kang-Hyun;Kang, Hae-Yong;Lee, Jae-Woo;Lee, Nam-Hee;Woo, Byung-Chill;Yun, Wan-Soo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.474-474
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    • 2011
  • Graphene is considered as a potential candidate for the key material in the ideal 2D nanoelectronics. Recently, it is reported that graphene has an interesting sensitivity to molecular adsorption on it. Such properties are believed to be enhanced by the existence of disorders and ripples inside graphene as well as by the interaction with the substrate underneath. Here, we report the effect of introducing structural disorders to the graphene on its electrical properties such as conductance, transconductance, low frequency noise, which can be successfully described by a simple model of the continuum percolation. In addition, the response of the graphene device to gaseous molecular adsorption was systematically investigated and the results were discussed along with the change in Raman spectra.

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The Effect of Quantum Well Structure on the Characteristics of GaN-based Light-Emitting Diode (양자 우물 구조가 GaN 기반 LED 특성에 미치는 영향)

  • Lee, Jae-Hyun;Yeom, Keesoo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.10a
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    • pp.251-254
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    • 2012
  • In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

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Impact ionization rate of the highly-doped AlGaAs/GaAs quantum well (고준위 도핑된 AlGaAs/GaAs 양자 우물의 충돌 이온화율)

  • 윤기정;황성범;송정근;홍창희
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.4
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    • pp.121-128
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    • 1996
  • The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.

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Effect of thiophenol-based ligands on photoluminescence of quantum dot nanocrystals

  • Moon, Hyungseok;Jin, Hoseok;Kim, Bokyoung;Kang, Hyunjin;Kim, Daekyoung;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.197-197
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    • 2016
  • Quantum dot nanocrystals(QDs) have been emerged as next generation materials in the field of energy harvesting, sensor, and light emitting because of their compatibility with solution process and controllable energy band gap. Especially, characteristics of color tuning and color purity make it possible for QDs to be used photoluminescence materials. Photoluminescence devices with QDs have been researched for a long time. Photoluminescence quantum yield(PL QY) is important factor that defines the performance of Photoluminescence devices. One of the ways to achieve better PL QY is ligand modification. If ligands are changed to proper electron donating group, electrons can be confined in the core which results in enhancement of PL QY. Because of the reason, short ligands are preferred for enhancing PL QY. Thiophenol-based ligands are shorter than typical alkyl chain ligands. In this study, the effect of thiophenol-based ligands with different functional groups are investigated. Four different types of thiophenol-based organic materials are used as organic capping ligand. QDs with bare thiophenol and fluorothiophenol show better quantum yield compared to oleic acid.

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Homogeneous characteristics of CdSe quantum dots from absorption coefficient and its change (흡수 계수와 흡수 계수 변화 특성에 따른 CdSe 양자 구슬 구조의 균일성 조사)

  • Hwang, Young-Nam;Shin, Sang-Hoon;Park, Seung-han;Kim, Ung;Kim, Dong-Ho
    • Korean Journal of Optics and Photonics
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    • v.8 no.2
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    • pp.122-127
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    • 1997
  • The hexagonal wurtzite structure of CdSe quantum dots are investigated by X-ray diffraction experiment. The absorption peaks due to quantum confinement effect are observed in the linear absorption spectra. Absorption coefficient changes at the lowest transition are measured with pump wavelength at the lowest transition and at the next higher transition from which direct intraband transition is not allowed. The measured larger absorption changes at the lowest transition confirm that the selection rules of intraband transition resulting from quantum confinement effect are satisfied. From the experimental results, therefore, we concluded that the CdSe quantum dots can be described as homogeneous system.

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Quantum Confinement of Exfoliated Organic-Inorganic Hybrid Perovskite Nanocrystals (유무기 페로브스카이트 나노결정의 박리화에 의한 양자구속효과)

  • Choe, Hyeon Jeong;Choi, Jihoon
    • Korean Journal of Materials Research
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    • v.31 no.9
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    • pp.496-501
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    • 2021
  • Metal halide perovskite nanocrystals, due to their high absorption coefficient, high diffusion length, and photoluminescence quantum yield, have received significant attention in the fields of optoelectronic applications such as highly efficient photovoltaic cells and narrow-line-width light emitting diodes. Their energy band structure can be controlled via chemical exchange of the halide anion or monovalent cations in the perovskite nanocrystals. Recently, it has been demonstrated that chemical exfoliation of the halide perovskite crystal structure can be achieved by addition of organic ligands such as n-octylamine during the synthetic process. In this study, we systematically investigated the quantum confinement effect of methylammonium lead bromide (CH3NH3PbBr3, MAPbBr3) nanocrystals by precise control of the crystal thickness via chemical exfoliation using n-octylammonium bromide (OABr). We found that the crystalline thickness consistently decreases with increasing amounts of OABr, which has a larger ionic radius than that of CH3NH3+ ions. In particular, a significant quantum confinement effect is observed when the amounts of OABr are higher than 60 %, which exhibited a blue-shifted PL emission (~ 100 nm) as well as an increase of energy bandgap (~ 1.53 eV).

Research Trend of Crystalline Porous Materials for Hydrogen Isotope Separation via Kinetic Quantum Sieving (운동 양자 체(Kinetic Quantum Sieving) 효과를 가진 나노다공성 물질을 활용한 수소동위원소 분리 동향)

  • Lee, Seulji;Oh, Hyunchul
    • Korean Journal of Materials Research
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    • v.31 no.8
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    • pp.465-470
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    • 2021
  • Deuterium is a crucial clean energy source required for nuclear fusion and is a future resource needed in various industries and scientific fields. However, it is not easy to enrich deuterium because the proportion of deuterium in the hydrogen mixture is scarce, at approximately 0.016 %. Furthermore, the physical and chemical properties of the hydrogen mixture and deuterium are very similar. Therefore, the efficient separation of deuterium from hydrogen mixtures is often a significant challenge when using modern separation technologies. Recently, to effectively separate deuterium, studies utilizing the 'Kinetic Quantum Sieving Effect (KQS)' of porous materials are increasing. Therefore, in this review, two different strategies have been discussed for improving KQS efficiency for hydrogen isotope separation performance using nanoporous materials. One is the gating effect, which precisely controls the aperture locally by adjusting the temperature and pressure. The second is the breathing phenomenon, utilizing the volume change of the structure from closed system to open system. It has been reported that efficient hydrogen isotope separation is possible using these two methods, and each of these effects is described in detail in this review. In addition, a specific-isotope responsive system (e.g., 2nd breathing effect in MIL-53) has recently been discovered and is described here as well.