• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.64-64
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• 2004

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.131-131
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• 2010

The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.219-220
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• 2004

Superparamagnetic regions and magnetic anisotropic properties in randomly orientated Co nano dots(NDs) were investigated as a function of dot diameter, spacing, and density. The Co NDs were fabricated by intentionally exposing a laser source on ultra thin film. Various dot sizes are ultimately realized by changing laser power, scan condition, and intial film thickness. Magnetic hysteresis loops, angle-dependent magnetization, and temperature dependence magnetization of the Co NDs were measured with a superconducting quantum interference device. The analysis of magnetization and hysteresis loops was effectively used to determine superparamagnetic regions of the Co NDs. Up to now, the experimentally observed results repeal that room temperature superparamagnetic limit of our Co NDs was about 30 nm in diameter, with the confirmation of high resolution transmission electron microscope.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.40-40
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• 2010

CdSe nanocrystals (NCs) have been decorated on singlewalled carbon nanotubes (SWCNTs) by combining a method of chemically modified substrate along with gate-bias control. CdSe/ZnS core/shell quantum dots were negatively charged by adding mercaptoacetic acid (MAA). The silicon oxide substrate was decorated by octadecyltrichlorosilane (OTS) and converted to hydrophobic surface. The negatively charged CdSe NCs were adsorbed on the SWCNT surface by applying the negative gate bias. The selective adsorption of CdSe quantum dots on SWCNTs was confirmed by confocal laser scanning microscope. The measured photocurrent clearly demonstrates that CdSe NCs decorated SWCNT can be used for photodetector and solar cell that are operable over a wide range of wavelengths.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.387-391
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• 2014

Self-assembled InAlAs/AlGaAs quantum dots (QDs) on GaAs substrates were grown by using modified molecular epitaxy beam in Stranski-Krastanov method. In order to study the structural and optical properties of InAlAs/AlGaAs QDs, atomic force microscopy (AFM) and photoluminescence (PL) measurements are conducted. The size and uniformity of QDs have been observed from the AFM images. The average widths and heights of QDs are increased as the deposition time increases. The PL spectra of QDs are composed of two peaks. The PL spectra of QDs were analyzed by the excitation laser power- and temperature-dependent PL, in which two PL peaks are attributed to two predominant sizes of QDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.489-489
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• 2011

The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.130-130
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• 2010

고출력 레이저 다이오드는 광 디스크, 고체 레이저 여기, 광섬유 증폭기, 레이저 프린터, 위성 간 통신 등의 여러분야에 응용되고 있고. 고효율, 저가격, 초소형등과 같은 장점으로 수요가 점점 증가하고 있다. 최근 레이저 다이오드의 광출력 향상 및 열적 안성성를 위해 양자점(Quantum Dot) 응용에 대해 많은 연구가 진행되고 있다. 양자점 기반 레이저 다이오드는 전자가 3차원으로 구속되어 있어 열적 안정성이 우수할 뿐만 아니라 낮은 문턱전류밀도로 인해 열 발생이 적어 광출력 감소 현상을 지연시킬 수 있다. 또한 발광면에서의 재결합 확률이 낮아 표면재결합에 의한 신뢰성 열화 문제를 해결할 수 있어 고신뢰성의 레이저 다이오드를 개발할 수 있다. 고출럭 808 nm 양자점 레이저 다이오드 개발을 위해서는 레이저 다이오드의 활성 영역인 양자점 구조에 대한 연구가 필수적이다. 본 연구에서는 최적화된 고출력 808 nm 양자점 레이저 다이오드 에피 성장을 위해 에피 구조에 대한 2D 시뮬레이션을 수행하였고, 양자점 밀도 및 에피층 변화에 따른 최적 양자점 구조에 대한 연구를 수행하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.1
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• pp.30-34
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• 2005

This study shows the lasing characteristics of InGaAs/InGaAsP multiple-quantum-well waveguide-type depleted optical thyristor (DOT) using the vertical window. The measured switching voltage and current are 3.36 V and 10 ㎂, respectively. The lasing threshold current is 131 mA at 25 ℃. The output peak wavelength is 1570 nm at a bias current of 1.22 Ith and there is not input signal anymore in the output port. The vertical injection depleted optical thyristor - laser diode (VIDOT-LD) using the vertical-injection structure shows very good isolation between input and output signal.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.152-153
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• 2003

최근 양자점 (Quantum Dot-QD)에 대한 관심이 기초 물리학뿐만 아니라 광전소자 응용 측면에서 많은 주목을 끌고 있다. 특히, 자발 형성방법으로 성장시킨 양자점 (Self-assembled QD)을 이용하여 Laser Diode와 같은 광소자에 응용한 결과가 발표되고 있다. 이러한 자발형성 방법으로 성장한 양자점을 광통신에 응용하기 위해서는 발광파장을 제어할 필요성이 있다. 따라서 본 연구에서는 단거리 광통신에 응용 될 수 있는 1.3 $\mu$m 영역과 장거리 광통신에 사용하는 1.55 $\mu$m 영역으로 InAs 양자점의 발광 파장을 변조한 결과에 대하여 분석하였다. (중략)

• Journal of Microbiology and Biotechnology
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• v.16 no.11
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• pp.1713-1719
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• 2006

A method for the simple, rapid, specific, and accurate detection of Bacillus anthracis spores was developed by employing specific capture peptides conjugated with fluorescent quantum dots (QDs). It was possible to distinguish B. anthracis spores from the spores of B. thuringiensis and B. cereus using these peptide-QD conjugates by flow cytometric and confocal laser scanning microscopic analyses. For more convenient high-throughput detection of B. anthracis spores, spectrofluorometric analysis of spore-peptide-QD conjugates was performed. B. anthracis spores could be detected in less than 1 h using this method. In order to avoid any minor yet false-positive signal caused by the presence of B. thuringiensis spores, the B-Negative peptide, which can only bind to B. thuringiensis, conjugated with another type of QD that fluoresces at different wavelength was also developed. In the presence of mixed B. anthracis and B. thuringiensis spores, the BABA peptide conjugated with QD525 and the B-Negative peptide conjugated with QD585 were able to bind to the former and the latter, specifically and respectively, thus allowing the clear detection of B. anthracis spores against B. thuringiensis spores by using two QD-labeling systems. This capture peptide-conjugated QD system should be useful for the detection of B. anthracis spores.