• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.432.2-432.2
• /
• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.

• 반도체디스플레이기술학회지
• /
• 제3권3호
• /
• pp.31-35
• /
• 2004

A blue light emitting diode with 8 periods InGaN/GaN multi-quantum well structure grown by metal-organic chemical vapor deposition was fabricated with the inclusion of the metal-interconnection process in order to integrate the chips for light lamp. The quantum well structure provides the blue light photoluminescence peaked at 479.2 nm at room temperature. As decreasing the temperature to 20 K, the main peak was shifted to 469.7 nm and a minor peak at 441.9 nm appeared indicating the quantum dot formation in quantum wells. The current-voltage measurement for the fabricated LED chips shows that the metal-interconnection provides good current path with ohmic resistance of 41 $\Omega$.

• 식물병연구
• /
• 제25권3호
• /
• pp.114-123
• /
• 2019

Quantum Dot LED (QD LED) 조명은 소형의 크기, 좁은 대역파장, 긴 수명, 전자 시스템을 통한 제어가 용이하여 현재 시설재배에 이용되는 형광등, 할로겐램프, HID, HSP 램프의 단점을 보완할 수 있는 작물생육에 이상적인 광원으로서 잠재력을 가지고 있다. QD LED 조명을 이용하여 식물 병원성 미생물의 방제가 가능하다면 작물재배에 사용되는 인력 및 비용을 절감하고 화학적 방제제를 사용하지 않은 안전성 높은 생산물을 얻을 수 있다는 장점이 있다. 본 연구에서는 식물공장 및 온실에서 많이 재배되고 있는 상추에 큰 피해를 입히는 주요 식물 병원성 곰팡이에 대한 QD LED 조명의 영향과 생장억제효과를 확인하기 위해 시행하였다. 상추에 주로 발생하여 작물에 피해를 입히는 Rhizoctonia solani, Phytophthora drechsleri, Sclerotinia sclerotiorum, Sclerotinia minor, Botrytis cinerea, Fusarium oxysporum, Pectobacterium carotovorum, Xanthomonas campestris균을대상으로 QD LED 조명에 의한 균사생장억제 효과를 조사하였으며 처리한 6종류의 조명 중 BLUE (450 nm) 조명은 Sclerotinia sclerotiorum는 50 cm 거리에서 16.7%의 억제율을 보였으며 30 cm 거리에서 94.1%의 균사생장억제율을 보였다. S. minor는 50 cm 거리에서 80.4%, B. cinerea는 50 cm 거리에서 36.3%의 균사생장이 억제되었으며 30 cm 거리에서 S. minor와 B. cinerea는 100%의 균사생장억제율을 보였다. 15 cm 거리에서는 3종의 병원균 모두 100%의 억제율을 보였다. QD RED (M1), QD RED (M2)조명은 30 cm와 15 cm 거리에서 Sclerotinia minor와 Botrytis cinerea의 균사생장을 100% 억제했으며 Sclerotinia sclerotiorum의 경우 30 cm 거리에서 QD RED (M1)과 QD RED (M2)조명에 대해 각각 75.2%, 100%의 억제율을 보였으나 15 cm 거리에서는 각각 5.8%, 36.3%의 억제율을 보였다. 상추에 병원균을 접종하여 LED 광원 하에 생장을 확인한 결과 QD RED (M2)광원에서 S. sclerotiorum의 감염을 59.9% 억제하였고 S. minor는 BLUE (450 nm), QD RED (M1), QD RED (M2) 광원에서 59.9%의 억제율을 보였다. B. cinerea의 경우 BLUE (450 nm) 광원에서 84%의 높은 억제율을 보였다.

• 한국전기전자재료학회논문지
• /
• 제29권12호
• /
• pp.737-749
• /
• 2016

Recently perovskite materials with much cheaper cost and marvellous optoelectronic properties have been studied for next generation LED display devices overseas. Technology development trends of inorganic $CsPbX_3$(X=halogen) based LEDs (PeLEDs) with assumed high stability were investigated on literature worldwide. It was found that syntheses methods of these nanocrystals (NCs, mainly quantum dots, QDs) made great progress. A new room temperature synthesis method showed outstanding PL (photoluminescence) properties such as high quantum yield (QY), narrow emission width, storage stability comparable with, or often exceeding those of conventional hot injection method and CdSe@ZnS type inorganic colloidal QDs. PeLEDs with shell layers might be more promising, indicating urgent real research start of this solution processing technology for small businesses in Korea.

• 융복합기술연구소 논문집
• /
• 제4권1호
• /
• pp.21-27
• /
• 2014

White LEDs (light-emitting diodes) are promising new-generation light sources which can replace conventional lamps due to their high reliability, low energy consumption and eco-friendly effects. This paper briefly reviews recent progress of oxy/nitride host phosphor and quantum dot materials with broad excitation band characteristics for phosphor-converted white LEDs. Among oxy/nitride host materials, $M_2Si_5N_8:Eu^{2+}$, $MAlSiN_3:Eu^{2+}$ M-SiON(M=Ca, Sr, Ba), ${\alpha}/{\beta}-SiAlON:Eu^{2+}$ are excellent phosphors for white LED using blue-emitting chip. They have very broad excitation bands in the range of 440-460 nm and exhibit emission from green to red. In this paper, In this review we focus on recent developments in the crystal structure, luminescence and applications of the oxy/nitride phosphors for white LEDs. In addition, the application prospects and current trends of research and development of quantum dot phosphors are also discussed.

• 한국재료학회지
• /
• 제20권11호
• /
• pp.606-610
• /
• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• 생물환경조절학회지
• /
• 제28권3호
• /
• pp.265-272
• /
• 2019

본 연구는 적무 새싹 재배시 LED와 QD-LED(Quantum Dot) 광조사가 종자 발아율, 항산화능, 그리고 미생물에 미치는 영향에 대해 알아보고자 수행되었다. 조사한 광은 청색(Blue), 적색(Red), 청색+적색(Blue+Red) 그리고 청색+적색+원적색 혼합광(QD-LED)광이며, 대조구로 명조건(형광등-FL)과 암조건(Dark)을 두었다. 발아율은 암조건에서 가장 높았다. 암조건에서 7일간 재배한 후 1일간 광처리한 적무 새싹의 초장과 생체중은 모든 처리구에서 통계적으로 유의한 차이는 보이지 않았다. 광조사후 자엽의 녹색은 청색+적색, 배축의 적색은 청색과 QD-LED의 색발현이 우수하였다. DPPH와 페놀은 암조건과 청색+적색, 안토시아닌은 청색과 QD-LED가 높은 수치를 나타내었다. 총 세균은 모든 처리구 유사하며 살균 효과는 나타나지 않았다. 대장균은 QD-LED의 수치가 가장 낮았으며, 총 곰팡이 수는 형광등에서 가장 낮았다. 위의 결과를 종합해보면, 적무새싹 생산를 위해 암조건에서 발아시켜 7일간 새싹으로 재배한 후, 수확전 24시간 동안 청색광 또는 QD-LED광을 조사하는 것이 색발현에 적합하며 안토시아닌 함량을 증가시키며 대장균 살균에 적합하다고 판단된다.

• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.167-171
• /
• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.627-627
• /
• 2013

Recently, most studies concerning inorganic CdSe/ZnS quantum dot (QD)-polymer hybrid LEDs have been concentrated on the structure with multiple layers [1,2]. The QD LEDs used almost CdSe materials for color reproduction such as blue, green and red from the light source until current. However, since Cd is one of six substances banned by the Restriction on Hazardous Substances (RoHS) directive and classified into a hazardous substance for utilization and commercialization as well as for use in life, it was reported that the use of CdSe is not suitable to fabricate a photoelectronic device. In this work, we demonstrate a novel, simple and facile technique for the synthesis of ZnO-graphene quasi-core.shell quantum dots utilizing graphene nanodot in order to overcome Cd material including RoHS materials. Also, We investigate the optical and structural properties of the quantum dots using a number of techniques. In result, At the applied bias 10 V, the device produced bluish-white color of the maximum brightness 1118 cd/$m^2$ with CIE coordinates (0.31, 0.26) at the bias 10 V.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.97-97
• /
• 2010

We demonstrate the hybrid polymer-quantum dot based multi-functional device (Organic bistable devices, Light-emitting diode, and Photovoltaic cell) with a single active-layer structure consisting of CdSe/ZnS semiconductor quantum-dots (QDs) dispersed in a poly N-vinylcarbazole (PVK) and 1,3,5-tirs- (N-phenylbenzimidazol-2-yl) benzene (TPBi) fabricated on indium-tin-oxide (ITO)/glass substrate by using a simple spin coating technique. The multi-functionality of the device as Organic bistable device (OBD), Light Emitting Diode (LED), and Photovoltaic cell can be successfully achieved by adding an electron transport layer (ETL) TPBi to OBD for attaining the functions of LED and Photovoltaic cell in which the lowest unoccupied molecular orbital (LUMO) level of TPBi is positioned at the energy level between the conduction band of CdSe/ZnS and LiF/Al electrode (band-gap engineering). Through transmission electron microscopy (TEM) study, the active layer of the device has a p-i-n structure of a consolidated core-shell structure in which semiconductor QDs are uniformly and isotropically adsorbed on the surface of a p-type polymer core and the n-type small molecular organic materials surround the semiconductor QDs.