• 전자공학회논문지
• /
• 제51권8호
• /
• pp.167-171
• /
• 2014

평판 디스플레이(plate panel display)가 휴대용으로 발전하면서 박막화, 고색재현성, 고휘도에 관한 연구가 활발히 이루어지고 있으며, 광원으로써 LED, OLED가 주로 이용되고 있다. 이러한 광원의 소재로 양자점에 관한 연구가 많이 이루어 지고 있는데, 양자점은 고색재현성과 유연디스플레이 구현에 있어서 주목받는 차세대 반도체 나노형광체 이다. 본 연구에서는 평판 디스플레이를 구현함에 있어서 양자점을 이용하는 방법에 관하여 제시하였다. CdSe/ZnS 양자점을 PET베리어 필름에 $100{\mu}m$ 두께로 도포하고 455nm의 파장을 갖는 청색 LED를 광원으로하여 빛을 조사하는 디바이스를 제작하고 광특성을 평가하였으며, LCD의 색변환 필름으로써 양자점의 적용 가능성을 제시하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.451-451
• /
• 2012

Instead of a highly toxic CdSe and ZnScore-shell,InP/ZnSecore-shell quantum dots [1,2] were investigated as an active material for quantum dot light emitting diode (QD-LED). In this paper, aquantum dot light-emitting diode (QDLED), consisting of a InP/ZnS core-shell type materials, with the device structure of glass/indium-tin-oxide (ITO)/PEDOT:PSS/Poly-TPD/InP-ZnS core-shell quantum dot/Cesium carbonate(CsCO3)/Al was fabricated through a simple spin coating technique. The resulting InP/ZnS core-shell QDs, emitting near blue green wavelength, were more efficient than the above CdSe QDs, and their luminescent properties were comparable to those of CdSe QDs.Thebrightness ofInP/ZnS QDLED was maximumof 179cd/m2.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.531-531
• /
• 2012

So many groups have been researching the green quantum dots such as InP, InP/ZnS for overcoming the semiconductor nanoparticles composed with heavy metals like as Cd and Pb so on. In spite of much effort to keep up CdSe quantum dots, it does not reach the good properties compared with CdSe/ZnS quantum dots. This quantum dot has improved its properties through the generation of core/shell CdSe/ZnS structure or core/multi-shell structures like as CdSe/CdS/ZnS and CdSe/CdS/ CdZnS/ZnS. In this research, we try to synthesize the InP multi-shell structure by the successiveion layer absorption reaction (SILAR) in the one pot. The synthesized multi-shell structure has improved quantum yield and photo-stability. To generate white light, highly luminescent InP multi-shell quantum dots were mixed with yellow phosphor and integrated on the blue LED chip. This InP multi-shell improved red region of the LEDs and generated high CRI.

• 한국분말재료학회지
• /
• 제19권6호
• /
• pp.451-457
• /
• 2012

Nowadays, research and development on quantum dot have been intensively and comprehensively pursued worldwide in proportion to concurrent breakthrough in the field of nanotechnology. At present, quantum dot technology forms the main interdisciplinary basis of energy, biological and photoelectric devices. More specifically, quantum dot semiconductor is quite noteworthy for its sub-micro size and possibility of photonic frequency modulation capability by controlling its size, which has not been possible with conventionally fabricated bulk or thin film devices. This could lead to realization of novel high performance devices. To further understand related background knowledge of semiconductor quantum dot at somewhat extensive level, a review paper is presently drafted to introduce basics of (semiconductor) quantum dot, its properties, applications, and present and future market trend and prospect.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2010년도 추계학술대회 논문집
• /
• pp.429-430
• /
• 2010

• 한국광학회지
• /
• 제35권3호
• /
• pp.95-106
• /
• 2024

일반 백색 LED의 연색성을 보완하기 위해 적색 양자점을 선택적으로 활용함으로써 고연색성 조명을 구현하는 연구가 최근 활발하다. 본 논문에서는 최근 이루어지고 있는 원격 양자점 부품 연구 및 이를 활용한 고연색성 조명 개발의 현황에 대해 소개한다. 특히 양자점 부품이 배치되는 조명의 광구조 최적화에 있어서 중요하게 고려해야 할 다양한 요소를 집중적으로 논의함으로써 향후 고연색성 조명 연구의 방향 및 전망까지 다루고자 했다.

• 한국전기전자재료학회논문지
• /
• 제27권3호
• /
• pp.151-155
• /
• 2014

We have developed quantum dot light emitting diodes (QD-LEDs) using a InP/ZnSe/ZnS multi-shell QD emission layer. The hybrid structure of organic hole transport layer/QD/organic electron transport layer was used for fabricating QD-LEDs. Poly(4-butylphenyl-diphenyl-amine) (poly-TPD) and tris[2,4,6-trimethyl-3-(pyridin-3-yl)phenyl]borane (3TPYMB) molecules were used as hole-transporting and electron-transporting layers, respectively. The emission, current efficiency, and driving characteristics of QD-LEDs with 50, 65 nm thick 3TPYMB layers were investigated. The QD-LED with a 50 nm thick 3TPYMB layer exhibited a maximum current efficiency of 1.3 cd/A.

• 한국재료학회지
• /
• 제30권8호
• /
• pp.421-425
• /
• 2020

A transparent quantum dot (QD)-based light-emitting diode (LED) with silver nanowire (Ag NW) and indium-tin oxide (ITO) hybrid electrode is demonstrated. The device consists of an Ag NW-ITO hybrid cathode (-), zinc oxide, poly (9-vinylcarbazole) (PVK), CdSe/CdZnS QD, tungsten trioxide, and ITO anode (+). The device shows pure green-color emission peaking at 548 nm, with a narrow spectral half width of 43 nm. Devices with hybrid cathodes show better performances, including higher luminance with higher current density, and lower threshold voltage of 5 V, compared with the reference device with a pure Ag NW cathode. It is worth noting that our transparent device with hybrid cathode exhibits a lifetime 9,300 seconds longer than that of a device with Ag NW cathode. This is the reason that the ITO overlayer can protect against oxidization of Ag NW, and the Ag NW underlayer can reduce the junction resistance and spread the current efficiently. The hybrid cathode for our transparent QD LED can applicable to other quantum structure-based optical devices.

• 전기전자학회논문지
• /
• 제27권1호
• /
• pp.30-37
• /
• 2023

양자점 발광 다이오드(QD-LED)의 효율과 안정성 향상을 위해서 QD 발광층에 주입되는 전하의 균형을 이루는 것은 필수이다. 산화 아연(ZnO)은 최신 QD-LED에서 전자수송층(electron transport layer, ETL)을 구성하기 위해 가장 많이 사용되고 있으나, ZnO의 자발적인 전자 주입은 QD-LED의 성능을 크게 열화시키는 과도한 전자 주입을 유발한다. 본 연구에서는 자기조립단분자막(self-assembled monolayer, SAM) 처리를 통해 ZnO의 전자 주입 특성을 조절하여 QD-LED의 성능을 향상시켰다. 전하 균형도를 향상시킨 결과, SAM을 처리한 QD-LED는 SAM을 처리 안한 소자와 비교하여 내부 양자 효율(external quantum efficiency, EQE)이 25%, 최대 휘도는 200% 향상되었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.135.2-135.2
• /
• 2014

Photon conversion technology for thin film solar cells is reviewed. The high-energy photons which are hardly absorbed in solar cells can be transformed the low energy photon by the photon conversion process such as down conversion or down shift, which can improve the solar cell efficiency over the material limit. CdSe-based quantum dot materials commonly used in LED can be used as the photon conversion layer for Si thin film solar cells. The photon conversion structure of CdSe-based quantum dot for Si thin film solar cells will be presented and the pros and cons for the Si thin film solar cells integrated with the photon conversion layers will be discussed.