• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.140-142
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• 2003

We have designed a SFQ (Single Flux Quantum) D2 Cell and Inverter(NOT) for a superconducting ALU (Arithmetic Logic Unit). To optimize the circuit, we have used Julia, XIC and Lmeter for simulations and layouts. We obtained the circuit margin of larger than $\pm$25%. After layout, we drew chip for fabrication of SFQ D2 Cell and Inverter. We connected D2 Cell and Inverter to jtl, DC/SFQ, SFQ/DC and RS flip-flop for measurement.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.298-299
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• 2009

Use of a DLP-beam projector is proposed to measure solar cell quantum efficiency distribution. The measurement requires a good spatial uniformity of the beam from the projector. We measured the spectral power distribution of the beam projector and the spatial uniformity of the white beam. By changing the gray level of the white beam at the measured spatial points, we improved the spatial illuminance uniformity to be about 2 % which was otherwise as much as 400 %.

• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.452-456
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• 1993

The quantum efficiencies of photomultiplier tubes were measured by counting the coincidence photon pairs generated in the process of spontaneous parametric down-conversion. They were measured within 3% accuracy over the range of wavelength from 560 to 850 nm without any standard light source or detector. The values for 633 nm correspond to those obtained with a calibrated laser power meter within the measurement error.

• Korean Journal of Materials Research
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• v.12 no.4
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• pp.296-303
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• 2002

For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.169-170
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• 2009

• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.36-36
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• 1996

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.272-273
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• 2005

• Rapid Communication in Photoscience
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• v.3 no.4
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• pp.81-84
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• 2014

To examine the microenvironmental effect of DNA on the photosensitized reaction, the electron-donor-connecting porphyrin, meso-(9-phenanthryl)-tris(N-methyl-p-pyridinio) porphyrin (Phen-TMPyP), was synthesized. Phen-TMPyP can bind to oligonucleotides with two binding modes, depending on the DNA concentration. The fluorescence lifetime measurement of Phen-TMPyP shows a shorter component than that of the reference porphyrin without the phenanthryl moiety. However, the observed value is much longer than those of previously reported similar types of electron-donor-connecting porphyrins, suggesting that electron-transfer quenching by the phenanthryl moiety is not sufficient. The fluorescence quantum yield of Phen-TMPyP ($5{\mu}M$) decreased with an increase in DNA concentration of up to $5{\mu}M$ base pair (bp), possibly due to self-quenching through an aggregation along the DNA strand, increased with an increase in DNA concentration of more than $5{\mu}M$ bp and reached a plateau. The fluorescence quantum yield of Phen-TMPyP with a sufficient concentration of DNA was larger than that of the reference porphyrin. The singlet oxygen ($^1O_2$) generating activity of Phen-TMPyP was confirmed by the near-infrared emission spectrum measurement. The quantum yield of $^1O_2$ generation was decreased by a relatively small concentration of DNA, possibly due to the aggregation of Phen-TMPyP, and recovered with a sufficient concentration of DNA. The recovered quantum yield was rather smaller than that without DNA, indicating the quenching of $^1O_2$ by DNA. These results show that a DNA strand can stabilize the photoexcited state of a photosensitizer and, in a certain case, suppresses the $^1O_2$ generation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.185-185
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• 2011

ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

• Nuclear Engineering and Technology
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• v.48 no.1
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• pp.153-163
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• 2016

Environments in nuclear power plants (NPPs) are changing as the design of instrumentation and control systems for NPPs is rapidly moving toward fully digital instrumentation and control, and modern computer techniques are gradually introduced into main control rooms (MCRs). Within the context of these environmental changes, the level of performance of operators in a digital MCR is a major concern. Situation awareness (SA), which is used within human factors research to explain to what extent operators of safety-critical systems know what is transpiring in the system and the environment, is considered a prerequisite factor to guarantee the safe operation of NPPs. However, the safe operation of NPPs can be guaranteed through a team effort. In this regard, the operating team's SA in a conventional and digital MCR should be measured in order to assess whether the new design features implemented in a digital MCR affect this parameter. This paper explains the team SA measurement method used in this study and the results of applying this measurement method to operating teams in different MCR environments. The paper also discusses several empirical lessons learned from the results.