• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.535-538
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• 2011

The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs selfassembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of lnAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.503-508
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• 2008

In order to reduce the piezoelectric field originated from the well layer which resides in InGaN/GaN light emitting diode, InGaN/GaN superlattice buffer layers were grown at the bottom and the top of the active layer. Measuring the photoluminescence spectra with different reverse bias voltages clearly revealed the condition of the flat band under which the transition energy is maximized and the linewidth is minimized. Accordingly, the piezoelectric field of $In_{0.15}Ga_{0.85}N$ in our sample was estimated as -1.08 MV/cm. It is less than half the value reported in the previous studies, and it is evidenced that the strain has reduced due to the superlattice buffer layers.

• Tribology and Lubricants
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• v.26 no.3
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• pp.167-174
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• 2010

An apparatus for measuring oil oxidation was developed, which is capable of being mounted to mechanical devices for detecting power of fluorescent light reflected from oil in real time as an indication of the oil oxidation. This device has an advantage over conventional fluorescence spectrometers where the thin film is required for the measurement. Clean and used oil samples (mineral and synthetic oils) were tested by the developed apparatus that calculates a fluorescence quantum yield and a light absorption coefficient of the oil based upon the signals from the two light-receiving members and evaluates the degree of oil oxidation of test oils based on the fluorescence quantum yield. Results generally show that the developed device is able to effectively evaluate oil oxidation characteristics on-site in the field.

• Journal of Integrative Natural Science
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• v.3 no.2
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• pp.112-116
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• 2010

Prepared CdSe nanoparticles were systems, one of the most studied and useful nanostructures. Semiconductor quantum dots (QDs) have been the subject of much interest for both fundamental reseach and technical applications in recent years, due mainly to their strong size dependent properties and excellent chemical processibility. CdSe nanocrystals were synthesized by using sol-gel process. Synthesized CdSe quantum dots were studied to evaluate the optical, electronic and structural properties using UV-absorption, and photoluminescence (PL) measurement. Prepared CdSe nanoparticles were subjected to sense hydrofluoric acid. Photoluminescence was quenched upon adding of hydrofluoric acid.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.307-308
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• 2008

본 논문에서는 장거리 양자암호 전송에 있어서 광섬유 전송 거리에 따른 오류율을 측정한 연구 결과를 소개한다. 특히 외부 환경에 안정된 양방향 양자 암호 전송 기술의 하나인 plug-and-play 방식의 구도에서 전송 거리를 극대화하는 노력에 있어서 가장 문제시되는 Raleigh-backscattering의 효과에 의한 양자비트 전송에서의 오류를 측정하였다. 아울러 이러한 오류를 최소화하면서 70 km 단일모드 광섬유 전송을 구현한 양자통신 결과를 소개하고자 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.457-458
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• 2007

We investigated a resistor network model for the horizontal AlInGaN LED. Adding the proposed current density dependent relative quantum efficiency, the power simulation can be also obtained. Comparing the simulation and the measurement results for the LED with the size of $350{\mu}m$, the model is reasonable to simulate the forward voltage and the light output power. Using this model we investigated the optimization of the position and the number of the finger electrodes in a given chip area. It shows that the center disposition of the p-finger electrode in p-area is optimal for the voltage and best for the power. And the minimum number of the n-finger electrodes is best for the power.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.62-68
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• 2012

The conversion efficiency of solar cells depending on incident angle of light is important for building-integrated photovoltaics (BIPV) applications. The quantum efficiency is the ratio of the number of charge carriers collected by the solar cell to the number of photons of a given energy shining on the solar cell. The analysis of angle dependence of quantum efficiencies give more information upon the variation of power output of a solar cell by the incident angle of light. The variations in power output of solar cells with increasing angle of incidence is different for the type of cell structures. In this study we present the results of the quantum efficiency measurement of single-crystalline silicon solar cells and a-Si:H thin-film solar cells with the angle of incidence of light. As a result, as the angle of incidence increases in single-crystalline silicon solar cells, quantum efficiency at all wavelength (300~1,100 nm) of light were reduced. But in case of a-Si:H thin-film solar cells, quantum efficiency was increased or maintained at the angle of incidence from 0 degree to about 40 degrees and dramatically decrease at more than 40 degrees in the range of visible light. This results of quantum efficiency with increasing incident angle were caused by haze and interference effects in thin-film structure. Thus, the structural optimization considering incident angle dependence of solar cells is expected to benefit BIPV.

• Journal of Korean Society on Water Environment
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• v.23 no.5
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• pp.705-711
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• 2007

Green quantum-dot nanocrystal (QD525) with anti-microcystin monoclonal antibody was applied for detection of microcystin, a monocyclic peptide hepatotoxin, extracted from the culture of Microcystis aeruginosa. The presence of microcystin in the cell lysate was verified by HPLC analysis with UV absorbance at 238 nm. Microcystis cell extract exhibited fluorescence emission spectra, which peak was around 460 nm because of their complex organic substances. When a spherical QD525 antibody conjugates (10~20 nm in diameter) were bound to the microcystins in the Microcystis cell lysate, the fluorescence intensity of the primary peak at 525 nm diminished while the secondary emission peak at 460 nm slightly increased intensities. It is due to energy transfer from the primary (major) to the secondary (minor) peak, resulting from physical deformation of QD525 and different environmental factors. On the other hand, other cell extracts did not show any fluorescence emission change. This study is very available for detecting and monitoring the microcystin because it is one step assay without washing step and portable spectrophotometer makes on-site measurement possible. For health risk assessment of the microcystin, the reliable and rapid system to detect and quantify microcystin is seriously required.

• Journal of Convergence for Information Technology
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• v.10 no.6
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• pp.28-34
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• 2020

A structure in which GaAs and AlGaAs epilayers are formed with a metal organic chemical vapor deposition equipment on a GaAs wafer similar to the structure of making a vertical cavity surface emitting laser is used. Photonic Quantum Ring (PQR) devices that are naturally generated by 3D resonance are manufactured by chemically assisted ion beam etching technology, which is a dry etching method. A new technology that can be fabricated has been studied, and as a result, the possibility of wet etching of a solution containing phosphoric acid, hydrogen peroxide and methanol was investigated, and the device fabrication by applying this method are also discussed. In addition, the spectrum of the fabricated optical device was measured, and the results were theoretically analyzed and compared with the wavelength value obtained by the measurement. It is expected that the PQR device will be able to model cells in a three-dimensional shape or be applied to the display field.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.208-208
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• 2010

Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.