• Title/Summary/Keyword: Quantum Dot

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Effect of Carboxylic Acid on Optical Properties of CuInS2/ZnS Semiconductor Nanocrystals (Carboxylic acid가 CuInS2/ZnS 반도체 나노입자의 광학적 특성에 미치는 영향)

  • Ahn, Si-Hyun;Choi, Gyu-Che;Beak, Yeun-Kyung;Kim, Young-Kuk;Kim, Yang-Do
    • Journal of Powder Materials
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    • v.19 no.5
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    • pp.362-366
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    • 2012
  • We report the effect of the chain length of carboxylic acid on the photoluminescence(PL) of $CuInS_2$/ZnS nanocrystals. $CuInS_2$/ZnS nanocrystals with emission wavelength ranging from 566 nm through 583 nm were synthesized with zinc acetate and carboxylic acids with various chain length. In this study, $CuInS_2$/ZnS nanocrystals prepared using long chain carboxylic acid showed more improved PL intensity. The origin of strong photoluminescence of the nanocrystals prepared with zinc acetate and long chain carboxylic acid was ascribed to improved size distribution due to strong reactivity between long chain carboxylic acid and zinc acetate.

Optical characteristic of 1.5{\mu}m$ InGaAs/InGaAsP/InP QD Superluminescent Diode ($1.5{\mu}m$ InGaAs/InGaAsP/InP 양자점 Superluminescent Diode의 광 특성)

  • Yoo, Young-Chae;Lee, Jung-Il;Kim, Kyoung-Chan;Kim, Eun-Kyu;Kim, Gil-Ho;Han, Il-Ki
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.493-498
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    • 2006
  • Superluminescent diodes (SLD) with the emitting wavelength of $1.55{\mu}m$ was fabricated on InGaAs quantum dot structure grown by MOCVD. The output power and 3-dB bandwidth at room temperature and continuous wave operation were 3 mw and 55 nm, respectively.

A Study on Correcting Korean Pronunciation Error of Foreign Learners by Using Supporting Vector Machine Algorithm

  • Jang, Kyungnam;You, Kwang-Bock;Park, Hyungwoo
    • International Journal of Advanced Culture Technology
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    • v.8 no.3
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    • pp.316-324
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    • 2020
  • It has experienced how difficult People with foreign language learning, it is to pronounce a new language different from the native language. The goal of various foreigners who want to learn Korean is to speak Korean as well as their native language to communicate smoothly. However, each native language's vocal habits also appear in Korean pronunciation, which prevents accurate information transmission. In this paper, the pronunciation of Chinese learners was compared with that of Korean. For comparison, the fundamental frequency and its variation of the speech signal were examined and the spectrogram was analyzed. The Formant frequencies known as the resonant frequency of the vocal tract were calculated. Based on these characteristics parameters, the classifier of the Supporting Vector Machine was found to classify the pronunciation of Koreans and the pronunciation of Chinese learners. In particular, the linguistic proposition was scientifically proved by examining the Korean pronunciation of /ㄹ/ that the Chinese people were not good at pronouncing.

Visualization of Gene Transfer into Live Cells Using Fluorescent Semiconductor Nanocrystals

  • Kim Jung Kyung;Lim Sun Hee;Lee Yongku;Shin Young Shik;Chung Chanil;Chang Jun Keun;Yoo Jung Yul
    • 한국가시화정보학회:학술대회논문집
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    • 2003.11a
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    • pp.81-82
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    • 2003
  • We have developed the method for the conjugation of biotinylated DNA to streptavidin-coated QDs. QD-DNA conjugates and a high-sensitive fluorescence imaging technique are adopted to visualize gene transport across the membrane of the live cell in real time. Endocytotic cellular uptake of oligonucleotide and electrically-mediated plasmid DNA transfer into the live cell are monitored by a quantitative microscopic imaging system. Long-term kinetic study enables us to reveal the unknown mechanisms and rate-limiting steps of extracellular and intracellular transport of biomolecules. We designed experimental protocols to conjugate the oligonucleotide or the plasmid DNA to commercially available streptavidin-coated QDs. Gel electrophoresis is used to verify the effect of incubation time and the molar ratio of QDs and DNA on the conjugation efficiency. It is possible to fractionate the QD-DNA conjugates according to the DNA concentration and obtain the purified conjugates by a gel extraction technique.

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Preparation and Characterization of CdSe nanoparticle for Solar Cell application (태양전지용 CdSe 나노입자의 합성)

  • Kim, Shin-Ho;Park, Myoung-Guk;Lee, Bo-Ram;Lee, Hyun-Ju;Kim, Yang-Do
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.11a
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    • pp.318-321
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    • 2007
  • CdSe nanoparticles were prepared by chemical solution methods using $CdCl_2{\cdot}4H_2O$ (or $Cd(NO_3)_ 2{\cdot}4H_2O$) and $Na_2SeSO_3$. The characteristics of CdSe nanoparticles were controlled by the react ion time, reaction temperature and reaction method as well as the surfactants. Cetyltrimethyl ammonium bromide(CTAB) was used as a capping agent to control the chemical reactions in aqueous solution. Polyvinylalcohol(PVA) was used as a templet in sono-chemical method. CdSe nanoparticles synthesized in aqueous solution showed homogeneous size distribution with relatively stable surface. CdSe nanoparticles synthesized in non-aqueous solution containing diethanolamine(DEA) showed the structure transformation from cubic to hexagonal as the reduction temperature increased from 80 to $160^{\circ}C$. Core shell CdSe was synthesized by sono-chemical method. Characteristics of CdSe nanoparticles were analyzed using transmission electron microscopy(TEM), x-ray photoelectron spectroscopy(XPS), x-ray diffraction(XRD), UV-Vis absorption spectra, fourier transform infrared spectroscopy(FT-IR) and photoluminescence spectra spectroscopy(PL). This paper presents simple routes to prepare CdSe nanoparticles for solar cell applications.

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Development of the Quantum Dot/ZnO Nanowire Heterostructure and Their Photoelectrochemical Application

  • Hwang, In-Seong;Seol, Min-Su;Kim, Hui-Jin;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.378-378
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    • 2011
  • ZnO 나노선 구조는 나노선 구조를 통해 입사한 빛을 산란시켜 광흡수를 촉진시키고, 바닥 전극으로 바로 이어진 수직의 1차원 구조를 통해 전자가 빠르게 이동할 수 있으며, 넓은 표면적을 가지고 있는 등의 장점을 가지고 있어 오래전부터 광전소자에 이용되었다. 하지만 ZnO 물질 자체의 밴드갭 에너지가 3.2 eV로 비교적 큰 편이라 가시광 영역의 빛을 흡수, 이용하기 위해서는 작은 밴드갭을 가지는 광감응 물질이 필요하다. 본 연구에서는 저온의 수열합성법을 통해 합성한 ZnO 나노선 구조 상에 Cd 계열의 무기물 양자점을 증착하여 이종구조를 형성하는 방법을 개발하였다. 본 연구에서 사용한 양자점인 CdS와 CdSe는 벌크 밴드갭 에너지가 각각 2.3 eV, 1.7 eV로 가시광 영역의 빛을 흡수할 수 있으며, ZnO 나노선과 type-II 밴드구조를 가지기 때문에 전자-정공 분리 및 포집에 유리하다. 합성된 구조를 이용하여 photoelectrochemical 특성을 분석하였으며, 그 결과 양자점의 증착으로 광전류 생성이 향상됨을 확인하였다. 특히 ZnO 나노선 상에 CdS 양자점 증착 후 추가적으로 CdSe 양자점을 증착하여 다중접합 나노선 구조를 형성한 경우 광전류 생성이 가장 크게 향상된 결과를 확인하였다.

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A stable solid state quantum dot sensitized solar cell with p-type CuSCN semiconductor and its dopping effect

  • Kim, Hui-Jin;Seol, Min-Su;Yong, Gi-Jung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.378-378
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    • 2011
  • 본 연구에서는 ZnO 나노선 기판을 제작하여 그 위에 밴드갭이 낮은 물질인 CdS, CdSe를 증착시킨 후 p-type 반도체 물질인 CuSCN을 증착시켜 안정성이 향상된 양자점 감응형 태양전지를 제작하였다. ZnO 나노선 기판은 투명한 FTO 기판 위에 ZnO를 진공증착시켜 seed layer를 제작하고 그 위에 $10{\mu}m$정도의 길이의 나노와이어를 성장시킨 후, 밴드갭이 낮은 CdS, CdSe 물질과의 다중접합을 이용하여 제작하고, 이러한 나노선 구조위에 chemical solution deposition을 이용하여 ${\beta}$-CuSCN을 형성시켰다. 양자점 감응형 태양전지는 ZnO 나노선을 photoanode로 이용하고 ZnO 나노선은 암모니아수와 아연염을 이용한, 비교적 저온의 수열합성법을 통해 합성하였고, sensitizer로 쓰인 CdS, CdSe 물질은 CBD방식을 통하여 합성된 나노선 위에 in-situ로 접합시켰다. 또한, 기존의 액체전해질을 이용한 양자점 감응형 태양전지의 안정성을 향상시키기 위해 p-type의 반도체 물질인 CuSCN물질을 propyl sulfide를 이용, ${\sim}80^{\circ}C$의 열을 가하여 in-situ 방식으로 다공성 구조에 효율적으로 접합이 가능하도록 deposition하였다. 일반적으로, CuSCN film은 홀 전도체로서의 장점을 지닌 반면, 전도성이 낮은 단점이 있기 때문에 이를 향상시키기 위해서 첨가제를 이용, 농도에 따라서 전도도가 향상되고 셀의 성능이 향상되는 것을 확인하였다. 이와 같이 합성된 구조는 주사전자현미경(SEM), X-선 회절(XRD), 솔라시뮬레이터 등의 분석장비를 이용하여 태양전지로서의 특성을 분석하였다. 또한 안정성 평가를 위하여 시간에 따른 셀의 특성변화도 비교하였다.

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Synthesis and Characterization of CuInS2 Semiconductor Nanoparticles and Evolution of Optical Properties via Surface Modification (CuInS2 나노 반도체 합성 및 표면 개질을 통한 광학적 효율 분석 연구)

  • Yang, Hee-Seung;Kim, Yoo-Jin
    • Journal of Powder Materials
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    • v.19 no.3
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    • pp.177-181
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    • 2012
  • Copper composite materials have attracted wide attention for energy applications. Especially $CuInS_2$ has a desirable direct band gap of 1.5 eV, which is well matched with the solar spectrum. $CuInS_2$ nanoparticles could make it possible to develop color-tunable $CuInS_2$ nanoparticle emitter in the near-infrared region (NIR) for energy application and bio imaging sensors. In this paper, $CuInS_2$ nanoparticles were successfully synthesized by thermo-decomposition methods. Surface modification of $CuInS_2$ nanoparticles were carried out with various semiconductor materials (CdS, ZnS) for enhanced optical properties. Surface modification and silica coating of hydrophobic nanoparticles could be dispersed in polar solvent for potential applications. Their optical properties were characterized by UV-vis spectroscopy and photoluminescence spectroscopy (PL). The structures of silica coated $CuInS_2$ were observed by transmission electron microscopy (TEM).

Multi-Valued Logic Device Technology; Overview, Status, and Its Future for Peta-Scale Information Density

  • Kim, Kyung Rok;Jeong, Jae Won;Choi, Young-Eun;Kim, Woo-Seok;Chang, Jiwon
    • Journal of Semiconductor Engineering
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    • v.1 no.1
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    • pp.57-63
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    • 2020
  • Complementary metal-oxide-semiconductor (CMOS) technology is now facing a power scaling limit to increase integration density. Since 1970s, multi-valued logic (MVL) has been considered as promising alternative to resolve power scaling challenge for increasing information density up to peta-scale level by reducing the system complexity. Over the past several decades, however, a power-scalable and mass-producible MVL technology has been absent so that MVL circuit and system implementation have been delayed. Recently, compact MVL device researches incorporating multiple-switching characteristics in a single device such as 2D heterojunction-based negative-differential resistance (NDR)/transconductance (NDT) devices and quantum-dot/superlattices-based constant intermediate current have been actively performed. Meanwhile, wafer-scale, energy-efficient and variation-tolerant ternary-CMOS (T-CMOS) technology has been demonstrated through commercial foundry. In this review paper, an overview for MVL development history including recent studies will be presented. Then, the status and its future research direction of MVL technology will be discussed focusing on the T-CMOS technology for peta-scale information processing in semiconductor chip.

InAs/GaAs 양자점 태양전지에서 양자점 크기 및 온도에 따른 Photovoltage 효과

  • Yun, Su-Jin;So, Mo-Geun;Son, Chang-Won;Han, Im-Sik;No, Sam-Gyu;Lee, Sang-Jun;Kim, Jong-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.228.1-228.1
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    • 2013
  • Photoreflectance (PR) 분광법은 비접촉, 비파괴적인 변조분광법으로서 반도체 표면 및 계면의 광학적 특성 연구에 많이 이용되고 있다. PR 신호의 Franz-Keldysh oscillation (FKO)으로부터 Molecular Beam Epitaxy (MBE) 방법으로 성장한 InAs/GaAs 양자점 태양전지 접합계면의 전기장을 조사하였다. InAs 양자점의 크기는 각각 1.7, 2.0, 2.5, 3.0 monolayer이며, p+-n-n+ 태양전지 구조의 표면으로부터 1.8 ${\mu}m$, 활성영역으로부터 약 1.1 ${\mu}m$ 위치에 삽입되어 있다. 여기광 세기가 큰 영역(1~200 $mW/cm^2$)에서 접합계면의 전기장으로부터 관측한 photovoltage 효과는 로그 스케일에서 대체로 선형적인 분포를 보였으며, 이를 계산결과와 비교 분석하였다. 또한, 양자점 크기 및 온도에 따른 photovoltage 효과는 활성영역에서 여기된 운반자의 양 및 양자점에 의한 전하트랩의 영향과 관련하여 비교 분석하였다.

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