• 세라미스트
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• 제21권2호
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• pp.29-37
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• 2018

In order to overcome the problems of existing low-dimensional materials (carbon nanotubes, graphene, transition metal dichalcogenides, etc) researches on new 1D materials have been studied. In the case of $LiMo_3Se_3$ and $Mo_6S_{9-x}I_x$, continuous researches have been carried out for 3D bulk synthesis and atomic scale dispersion. Recently, quantum confinement effect of $LiMo_3Se_3$ and bio-stability of $Mo_6S_{9-x}I_x$ have been proven and various applications have started to be studied. In addition, device application results using new 1D materials such as $Sb_2Se_3$ (optoelectronic devices using the property of effectively reducing exciton decay due to no dangling bond) and $VS_4$ (electrochemical energy storage using the space between 1-D nanostructures) have been reported very importantly. Therefore, it can be claimed that it has reached a very important time to find and synthesize new 1D materials and to report various characteristics not existing.

• 한국세라믹학회지
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• 제35권12호
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• pp.1337-1342
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• 1998

To investigate an effect of phase separation on precipitation characteristics of ZnS microcrystals in ma-trix glass ZnS doped borosilicate glasses for nonlinear optical applications were prepared by melting and pre-cipitation process. ZnS dopant contributed to phase separation promotion which increased the phase separa-tion of the matrix glass within immiscibility region. It was also found that ZnS as phase separation promoter showed a similar contribution for some selected glass compositions in miscibility region. The precipitation of ZnS microcrystals occurred in thephase separable glass compoitions. The radius of ZnS microcrystals in-creased with increasing the heat treatment temperature and Na2O contents of matrix glass composition. The ZnS particle sizes estimated by effective mass approximation ranged from about 30 to 80${\AA}$ It was suf-ficiently small to show quantum confinement effect.

• Advances in materials Research
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• 제1권1호
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• pp.37-49
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• 2012

In this paper, we present modeling and characterization of CNT-based TSVs to be used in high-frequency RF applications. We have developed an integrated model of CNT-based TSVs by incorporating the quantum confinement effects of CNTs with the kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as a monolithic microwave capacitor with the resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine the optimized configuration for CNT-based TSVs for high frequency RF applications.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.53-56
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• 2009

At room-temperature, a facile, seedless, and environmentally benign green route for the synthesis of star like PbS nanoclusters at 7 min in aqueous solution of 1-ethyl-3-methylimidazolium ethyl sulfate, [EMIM] [$EtSO_{4}$], room-temperature ionic liquid (RTIL), via ultrasonic irradiation is proposed. The X-ray diffraction studies display that the products are excellently crystallized in the form of cubic structure. An energy dispersive X-ray spectroscopy (EDX) investigation reveals the products are extremely pure. The absorption spectra of the product exhibit band gap energy of about 4.27 eV which shows an enormous blue shift of 3.86 eV that can be attributed to very small size of PbS nanoparticles produced and quantum confinement effect. A possible formation mechanism of the PbS nanoparticles using ultrasonic irradiation in aqueous solution of the RTIL is presented.

• 한국재료학회지
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• 제14권2호
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• pp.83-89
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• 2004

SiC nanotubes were synthesized by SLS growth mechanism using various metal catalysts. Synthesized nanotubes had mean diameters of 20~50 nm and several $\mu\textrm{m}$ length. The kind of catalysts affected microstructures of SiC nanotubes by different diffusion routes. These differences are attributed to catalysts' physical properties and relative activities to the graphite substrate. Fe acted as a good catalyst of SLS growth mechanism. But in case of Ni, SiC nanotubes grew slowly. Optical property was measured by photoluminescence measurement. Relatively broad peak was obtained and mean peak positioned at about 430 nm. This result was the same as other nanocrystalline SiC materials, but was different from the results of bulk SiC probably due to quantum confinement effect and defect in the grown SiC nanotube.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.75-78
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• 2002

Si thin films on p-type (100) Si substrate have been prepared by a pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, Si thin film has been annealed again at 400-840$^{\circ}C$ in nitrogen ambient. Strong blue photoluminescence (PL) have been observed at room temperature. We report the PL properties of Si thin films with the variation of the annealing temperature.

• Advances in nano research
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• 제1권3호
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• pp.125-131
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• 2013

This study is aimed to calculate the radiative lifetime of Wannier-Mott excitons in nanoclusters of a narrow-bandgap semiconductor embedded in a wide-bandgap one. The nanocluster linear dimensions are assumed to be much larger than the radius of the exciton so that the latter is not destructed by the confinement potential as it takes place in small quantum dots. The calculations were carried out for an example of InAs nanoclusters put into the GaAs matrix. It is shown that the radiative lifetime of Wannier-Mott excitons in such clusters increases with the decrease of the cluster dimensions, this tendency being more pronounced at low temperatures. So, the creation of excitons in nanoclusters of a narrow-bandgap material embedded in a wide-bandgap one can be used to significantly prolong their radiative lifetime in comparison with that of excitons in a bulk semiconductor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.162-164
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• 2004

Nanocrystalline silicon(nc-Si) thin films on the silicon substrates have been prepared by pulsed laser deposition(PLD). The optical and structural properties of films have been investigated depending on deposition temperature, annealing, and oxidation process. When the deposition temperature increased, photoluminescence(PL) intensity abruptly decreased and peaks showed red shift. Annealing process could reduce the number of defect centers. Oxidation had a considerable effect upon the formation and isolation of the nanocrystals. These results indicate that the formation mechanism of Si nanocrystals grown by PLD can be explained by three steps of growth, passivating defect centers, and isolation, sequentially.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.