• Journal of the Korean institute of surface engineering
• /
• v.48 no.4
• /
• pp.179-184
• /
• 2015

Quadrupole Mass Spectrometers (QMS) is a very useful tool in vacuum process diagnosis. Tungsten filament based ion sources are vulnerable to contamination from process gas monitoring. Common symptoms of quadrupole mass spectrometer malfunction is appearance of unwanted contaminant mass peaks or no detection of any ion peaks. We disassembled used quadrupole mass spectrometer and found out black insulating deposits on inside of ion source parts. Five steps of cleaning procedure were applied and almost full restoration of functions were confirmed in two types of closed ion source quadrupole mass spectrometer. By using a numerical modeling (CFD-ACE+) technique, the electric potential profile of ion source with/without insulating deposit was calculated and showed the possibility of quadrupole mass spectrometer malfunction by the deterioration of designed potential profile inside the ion source.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2014.11a
• /
• pp.169-170
• /
• 2014

반도체, 디스플레이 산업 등의 진공공정이 사용되면서 공정 중에 내부기체 종류와 양을 정확한 측정하기 위해서 QMS (Quadrupole Mass Spectrometer)가 사용되고 있다. 이온전류 변화로 공정분석을 진행하므로 필라멘트로 인한 오염과 이온소스의 오염은 치명적으로 작용한다.

• Journal of the Korean Vacuum Society
• /
• v.16 no.2
• /
• pp.91-98
• /
• 2007

The Korea Research Institute of Standards and Science (KRISS) has developed a residual gas analyzer (RGA) calibration system and measured gas sensitivities for two different types QMSs using nitrogen, argon, and helium. Different gas sensitivities were identified according to mass and pressure, so it was revealed that the gas sensitivity correction is necessary for proper use of mass spectrometers.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.02a
• /
• pp.374-374
• /
• 2008

• Applied Science and Convergence Technology
• /
• v.24 no.5
• /
• pp.142-150
• /
• 2015

A failure analysis of tungsten filaments used in quadrupole mass spectrometer for plasma process monitoring was carried by using SEM and EDS. Failed at high temperature, filaments showed two kinds of failure modes. The one is that diameter of filament became thinner gradually and finally snapped. The other is that filament abruptly snapped almost at a right angle. The EDS analysis showed Fe and C, including W and Fe, on the surface of failed filament. when failed filaments were treated with plasma in mixture of Ar and $CF_4$, the amount of Fe and C decreased. The failure analysis of filament showed that the cause of filament failure is thermal evaporation and grain growth of tungsten at high temperature.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.55 no.4
• /
• pp.204-208
• /
• 2006

In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as $BCl_3/Ar$ gas mixing ratio, RF power, and process pressure. As the $BCl_3/Ar$ gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between $BCl_3$ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.7
• /
• pp.563-567
• /
• 2000

We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

• Bulletin of the Korean Chemical Society
• /
• v.22 no.8
• /
• pp.883-888
• /
• 2001

We describe an ion-surface scattering apparatus newly developed to investigate the reactive scattering process of low-energy alkali-metal ions at surfaces. The apparatus consists of an alkali-metal ion gun that is rotatable by 360°, a quadrupole mass spectrometer (QMS) with an ion energy analyzer, a sample manipulator with a heating-and-cooling stage, and an ultrahigh vacuum (UHV) chamber that houses these components. Preliminary experimental results obtained from the apparatus are presented on angular and energy distributions of the ions scattered from clean Pt(111) and water-adsorbed Pt surfaces.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.104-104
• /
• 2011

사중극 질량분석기(Quadrupole Mass Spectrometer, QMS)의 신뢰성을 향상시키기 위해 이온소스를 개선하고 평가하였다. 공정가스에 의한 오염 및 charging 효과로 인해 이온전류가 감소하는 현상을 발견하였고 이를 개선하기 위해 이온소스의 표면 거칠기를 줄여서 신뢰성을 향상시켰다. 또한 이온소스를 평가하는 방법으로 희석된 혼합가스를 이용하여 MDPP (Minimum Detectable Partial Pressure)를 측정하였고 이를 위해 희석된 가스의 이온 전류와 배경 노이즈의 비율(Signal/Noise)을 극대화시키면서 QMS를 튜닝하였다. 이 평가방법을 이용하여 상용 이온소스와 한국표준과학연구원에서 제작한 두 종류의 이온소스를 평가 비교하였다. QMS에 대한 국제표준안(ISO/TC 112 CD14291) 제정을 위한 진행상황도 소개하려고 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.187-190
• /
• 2004

In this study, PST thin films were etched with inductively coupled $Cl_2/(Cl_2+Ar)$ plasmas. The etch characteristics of PST thin films as a function of $Cl_2/(Cl_2+Ar)$ gasmixtures were analyzed by using quadrupole mass spectrometer (QMS). Systematic studies were carried out as a function of the etching parameters, including the RF power and the working pressure. The maximum PST film etch rate is 56.2 nm/min, because a small addition of $Cl_2$ to the $Cl_2/Ar$ mixture increased the chemical effect. It was proposed that sputter etching is the dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.