• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.208-212
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• 2009

The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging $1.1{\sim}1.4\;eV$ was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from $450^{\circ}C$ to $750^{\circ}C$, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

• Journal of KIISE:Software and Applications
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• v.26 no.9
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• pp.1085-1094
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• 1999

이동 분산 환경에서는 무선 데이타 전송 기법을 통하여 사용자들에게 다양한 정보들을 전달하게 된다. 본 논문은 균등 무선 데이타 방송 환경에서, 빠른 시간에 방송데이타를 접근할 수 있는 방법에 대하여 기술한다. 이를 위하여 무선 방송 데이타의 스케쥴링 문제를 정의하고, 어떤 질의가 접근하는 데이타들의 응집 정도를 나타내는 `질의 거리(Query Distance: QD)'라는 측정 기준을 제시한다. 제안한 질의 거리를 사용하여 각 질의의 우선 순위에 따라 해당 질의가 접근하는 데이타 집합을 방송 스케쥴에 추가하면서 스케쥴을 구성하는 데이타 스케쥴링 기법을 제시한다. 데이타 집합의 스케쥴 구성 과정에서 우선 순위가 높은 질의의 질의 거리를 최소화하면서 낮은 우선 순위 질의들의 질의 거리를 줄이는 스케쥴 확장 규칙들을 사용한다. 예를 이용하여 제안하는 방법에 대하여 설명한 후, 실험을 통해 제안한 방법의 성능을 평가한다.Abstract In mobile distributed systems the data on the air can be accessed by a lot of clients. This paper describes the way clients access the broadcast data in short latency in uniform wireless broadcasting environment. We define the problem of wireless data scheduling and propose a measure, named Query Distance(QD), which represents the coherence degree of data set accessed by a query. By using the measure, we give a data scheduling method that constructs the broadcast schedule by appending each query's data set in greedy way. When constructing the schedule, we use schedule expansion rules that reduce the QD's of lower-frequency queries while minimizing the QD's of the higher-frequency ones. With the use of examples we illustrate the mechanism of the proposed method and we test the performance of our method.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.207-207
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• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Current Optics and Photonics
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• v.4 no.3
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• pp.161-173
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• 2020

Colloidal quantum dots (QDs) have gained tremendous attention as a key material for highly advanced display technologies. The performance of QD light-emitting diodes (QLEDs) has improved significantly over the past two decades, owing to notable progress in both material development and device engineering. The brightness of QLEDs has improved by more than three orders of magnitude from that of early-stage devices, and has attained a value in the range of traditional inorganic LEDs. The emergence of high-luminance (HL) QLEDs has induced fresh demands to incorporate the unique features of QDs into a wide range of display applications, beyond indoor and mobile displays. Therefore it is necessary to assess the present status and prospects of HL-QLEDs, to expand the application domain of QD-based light sources. As part of this study, we review recent advances in HL-QLEDs. In particular, based on reports of brightness exceeding 10⁵ cd/㎡, we have summarized the major approaches toward achieving high brightness in QLEDs, in terms of material development and device engineering. Furthermore, we briefly introduce the recent progress achieved toward QD laser diodes, being the next step in the development of HL-QLEDs. This review provides general guidelines for achieving HL-QLEDs, and reveals the high potential of QDs as a universal material solution that can enable realization of a wide range of display applications.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1555-1560
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• 2010

Quantum dots (QDs) are extensively employed for biomedical research as a fluorescence reporter and their use for various labeling applications will continue to increase as they are preferred over conventional labeling methods for various reasons. However, concerns have been raised over the toxicity of these particles in the biological system. Till date no thorough investigation has been carried out to identify the molecular signatures of QD mediated toxicity. In this study we evaluated the toxicity of CdSe, $Cd_{1-x}Zn_xS$/ZnS and CdSe/ZnS quantum dots having different spectral properties (red, blue, green) using human embryonic kidney fibroblast cells (HEK293). Cell viability assay for both short and long duration exposure show concentration material dependent toxicity, in the order of CdSe > $Cd_{1-x}Zn_xS$/ZnS > CdSe/ZnS. Genome wide changes in the expression of genes upon QD exposure was also analyzed by wholegenome microarray. All the three QDs show increase in the expression of genes related to apoptosis, inflammation and response towards stress and wounding. Further comparison of coated versus uncoated CdSe QD-mediated cell death and molecular changes suggests that ZnS coating could reduce QD mediated cytotoxicity to some extent only.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.2
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• pp.1100-1123
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• 2019

A code-based cryptosystem can resist quantum-computing attacks. However, an original system based on the Goppa code has a large key size, which makes it unpractical in embedded devices with limited sources. Many special error-correcting codes have recently been developed to reduce the key size, and yet these systems are easily broken through side channel attacks, particularly differential power analysis (DPA) attacks, when they are applied to hardware devices. To address this problem, a higher-order masking scheme for a McEliece cryptosystem based on the quasi-dyadic moderate density parity check (QD-MDPC) code has been proposed. The proposed scheme has a small key size and is able to resist DPA attacks. In this paper, a novel McEliece cryptosystem based on the QD-MDPC code is demonstrated. The key size of this novel cryptosystem is reduced by 78 times, which meets the requirements of embedded devices. Further, based on the novel cryptosystem, a higher-order masking scheme was developed by constructing an extension Ishai-Sahai-Wagne (ISW) masking scheme. The authenticity and integrity analysis verify that the proposed scheme has higher security than conventional approaches. Finally, a side channel attack experiment was also conducted to verify that the novel masking system is able to defend against high-order DPA attacks on hardware devices. Based on the experimental validation, it can be concluded that the proposed higher-order masking scheme can be applied as an advanced protection solution for devices with limited resources.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.201-208
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• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.

• Journal of Haehwa Medicine
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• v.15 no.1
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• pp.1-9
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• 2006

For this study, we carried out dementia assessment examination of 74 patients with memory disturbance who have come to Cheongju oriental hospital of Daejeon university from April 2005 to February 2006. This study classified the patients as none-dementia(ND), questionable dementia(QD), and dementia(DA) groups and analyzed the result of examination. As a result, the following conclusion was drawn. 1. Among the 3 groups, there was no significant differences in the sex distribution. But according to age distribution, the age of QD and DA groups showed significant difference from that of ND group. 2. MMSE-K and HDS-K scores showed the significant differences among all groups, and 7 MS result showed the significant difference between ND and the other groups. 3. The DA group significantly got lower scores than ND group in the items of the MMSE-K, Orientation, Registration, Recall, Attention, Copy two pentagons and Comprehension. Especially, significant difference also was shown in the orientation item between QD and DA groups. 4. The scores in the items of 7 MS, Benton temporal orientation, Enhanced cued recall and Clock drawing showed significant difference among all groups. Category fluency score showed significant difference between ND and the other groups. 5. The results of Brain CT and clinical chemistry test didn't show significant difference among all groups.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.627-627
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• 2013

Recently, most studies concerning inorganic CdSe/ZnS quantum dot (QD)-polymer hybrid LEDs have been concentrated on the structure with multiple layers [1,2]. The QD LEDs used almost CdSe materials for color reproduction such as blue, green and red from the light source until current. However, since Cd is one of six substances banned by the Restriction on Hazardous Substances (RoHS) directive and classified into a hazardous substance for utilization and commercialization as well as for use in life, it was reported that the use of CdSe is not suitable to fabricate a photoelectronic device. In this work, we demonstrate a novel, simple and facile technique for the synthesis of ZnO-graphene quasi-core.shell quantum dots utilizing graphene nanodot in order to overcome Cd material including RoHS materials. Also, We investigate the optical and structural properties of the quantum dots using a number of techniques. In result, At the applied bias 10 V, the device produced bluish-white color of the maximum brightness 1118 cd/$m^2$ with CIE coordinates (0.31, 0.26) at the bias 10 V.