• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.94-98
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• 2020

The core/shell of nanowires (NWs) with Cu-doped CdSe quantum dots were fabricated as an electron transport layer (ETL) for perovskite solar cells, based on ZnO/TiO2 arrays. We presented CdSe with Cu2+ dopants that were synthesized by a colloidal process. An improvement of the recombination barrier, due to shell supplementation with Cu-doped CdSe quantum dots. The enhanced cell steady state was attributable to TiO2 with Cu-doped CdSe QD supplementation. The mechanism of the recombination and electron transport in the perovskite solar cells becoming the basis of ZnO/TiO2 arrays was investigated to represent the merit of core/shell as an electron transport layer in effective devices.

• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1502-1505
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• 2018

We present a design for hybrid circular Bragg gratings (hCBGs) for efficiently extracting single-photons emitted by InAs quantum dots (QDs) embedded in GaAs. Finite-difference time-domain simulations show that a very high photon collection efficiency (PCE) up to 96% over a 50 nm bandwidth and pronounced Purcell factors up to 19 at cavity resonance are obtained. We also systematically investigate the geometry parameters, including the $SiO_2$ thickness, grating period, gap width and the central disk radius, to improve the device performances. Finally, the PCEs and the Purcell factors of QDs located at different positions of the hCBG are studied, and the results show great robustness against uncertainties in the location of the QD.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• International Journal of Industrial Entomology and Biomaterials
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• v.43 no.2
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• pp.99-103
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• 2021

In the present study, twelve bivoltine silkworm races were evaluated for its performance based on quantitative and qualitative traits. Seven oval and five peanut cocoon shaped races were reared in different seasons of the year. By using evaluation index method, the results showed that six races were identified as potential parental races. Among oval races, 75xin, KoC, KoZ and among peanut races An 902, 7532 and QD7 were selected as base material. The identified high yielding races will be used in various breeding programs as initial parents for the production of superior bivoltine breeds/hybrids in Vietnam

• Prospectives of Industrial Chemistry
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• v.23 no.6
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• pp.14-24
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• 2020

최근 우수한 발광 특성을 갖는 양자점을 고해상도 디스플레이의 발광 소재로 도입하고자 하는 노력이 활발하다. 양자점을 활용한 디스플레이의 실현을 위해서는 콜로이드 상태인 다색의 양자점을 고해상도로 패터닝하는 기술의 확립이 필요하다. 본 연구에서는 ethane-1,2-diyl bis(4-azido-2,3,5,6-tetrafluorobenzoate)를 양자점용 가교제로 활용하여 용액공정을 기반으로 형성된 양자점 박막을 고해상도로 패터닝한 기술을 소개하고자 한다. 위 양자점용 가교제의 양 말단에는 아지드 그룹을 포함한 작용기가 존재한다. 아지드 기는 자외선에 의해 광 활성화되어 양자점 표면의 알킬 리간드와 가교 결합을 형성함으로써, 양자점 박막에 화학적 내구성을 부여한다. 본 기술을 기반으로, 적색, 녹색, 청색의 카드뮴 기반 양자점을 고해상도로 패터닝하고 정밀하게 배열하여 인치 당 화소 수 1400 이상의 픽셀 형성에 성공하였다. 또한 가교 반응 후에도 성능 저하가 없는 양자점 박막 및 자발광 양자점 다이오드를 개발하였다.

• Journal of Powder Materials
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• v.31 no.3
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• pp.226-235
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• 2024

InP quantum dots (QDs) have attracted researchers' interest due to their applicability in quantum dot light-emitting displays (QLED) or biomarkers for detecting cancers or viruses. The surface or interface control of InP QD core/ shell has substantially increased quantum efficiency, with a quantum yield of 100% reached by introducing HF to inhibit oxide generation. In this study, we focused on the control of bandgap energy of quantum dots by changing the Zn/(In+Zn) ratio in the In(Zn)P core. Zinc incorporation can change the photoluminescent light colors of green, yellow, orange, and red. Diluting a solution of as-synthesized QDs by more than 100 times did not show any quenching effects by the Förster resonance energy transfer phenomenon between neighboring QDs.

• Radiation Oncology Journal
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• v.19 no.4
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• pp.345-352
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• 2001

Purpose : To evaluate the treatment results and prognostic factors after radiotherapy in stage IIB uterine cervix cancer. Materials and methods : We retrospectively analyzed the records of 90 patients with stage IIB uterine cervix cancer who received radiotherapy between 9/94 and 12/99. Age was ranged from 28 to 79 years (median 57). Tumor size was $\geq4\;cm$ in 64 patients. Preteatment SCC level was measured in 75 patients. Twenty nine patients received conventional radiotherapy (QD) and the others received modified hyper-fractionated radiotherapy (BID). Only 7 patients in BID had tumor size <4 cm. All patients received high dose rate brachytherapy $(4\;Gy\times7\;or\;5\;Gy\times6)$. No Patient received concurrent chemotherapy during radiotherapy. Follow up period was ranging from 9 to 76 months (median 38). Results : The 5-year overall and disease free survival rates were $73.4\%\;and\;71.6\%$, respectively. Local recurrences occurred in $10\%$ of patients, and distant metastasis in $18.9\%$. There was a significant correlation between OS/DFS and tumor size $(<4cm;\;OS\;95.2\%,\;DFS\;91.4\%,\;\geq4cm;\;OS\;63.4\%,\;DFS\;63.4\%)$. Pretreatment SCC level was one of prognostic factors only in univariate analysis. Conclusion : With modified hyperfractionated radiotherapy, there was very low local recurrence rate $(6.6\%)$ and high 5-year overall and disease free survival rate $(75.4\%\;and\;70.5\%)$, which is comparable to results after concurrent chemoradiotherapy in bulky, locally advanced stage IIB uterine cervix cancer.

• Journal of Physiology & Pathology in Korean Medicine
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• v.27 no.3
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• pp.318-326
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• 2013

This study was performed to investigate relationship between each pattern identification and heart rate variability(HRV) indices. We analyzed 201 subjects who participated in stroke check up. We classified the subjects into four groups of pattern identifications; Fire-Heat pattern(FH), Yin Deficiency pattern(YD), Qi Deficiency pattern(QD) and Dampness-Phlegm pattern(DP) that based on Korean Standard Pattern Identifications for Stroke-III. We investigated significance of HRV indices between each pattern identification and heart rate variability indices. The total number of the subject group was 201, whereas the groups were divided into four groups; Fire-Heat pattern group(n=47), Yin Deficiency pattern(n=65), Qi Deficiency pattern(n=33), and Dampness-Phlegm pattern(n=56). SDNN, TP, Ln(TP), VLF, Ln(VLF), LF, Ln(LF) and HF were significantly higher in the Fire-Heat pattern(FH) group than other groups of pattern identifications, but there was no differences among the Yin Deficiency group, the Qi Deficiency group and the Dampness-Phlegm group. Ln(HF), LF(NORM), HF(NORM) and LF/HF ratio were significantly higher in the Fire-Heat group than in the Qi Deficiency group. However, there was no significant differences among the Dampness-Phlegm group, the Yin Deficiency group, Fire-Heat group and the Qi Deficiency group. Through this study, we found out some significant relationships between each pattern identification group and HRV indices. The result of this study demonstrates that sympathetic nerve was more active in the Fire-Heat group than other groups.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.474-480
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• 2009

We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.