• Advances in nano research
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• v.1 no.4
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• pp.203-210
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• 2013

So far, all reviews and control approaches of spin relaxation have been done on lateral single electron quantum dots. In such structures, many efforts have been done, in order to eliminate spin-lattice relaxation, to obtain equal Rashba and linear Dresselhaus parameters. But, ratio of these parameters can be adjustable up to 0.7 in a material like GaAs under high-electric field magnitudes. In this article we have proposed a single electron QD structure, where confinements in all of three directions are considered to be almost identical. In this case the effect of cubic Dresselhaus interaction will have a significant amount, which undermines the linear effect of Dresselhaus while it was destructive in lateral QDs. Then it enhances the ratio of the Rashba and Dresselhaus parameters in the proposed structure as much as required and decreases the spin states up and down mixing and the deviation angle from the net spin-down As a result to the least possible value.

• Information Display
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• v.18 no.1
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• pp.20-26
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• 2017

앞서 살펴본 것처럼, QLED의 풀컬러 디스플레이 적용을 위해서는 QD의 RGB 패터닝이 핵심 기술이고, 이를 위해 최근 프린팅 기반의 다양한 패터닝 기술이 연구개발 되고 있다. 아직까지 QLED 소자 기술도 완전히 성숙하지는 않은 상황이므로 풀컬러 디스플레이 실현 시기를 논하기는 조금 이를지도 모르겠다. 하지만 OLED 등의 유사 기술에 비해 발전 속도가 훨씬 빠르기에 긍정적인 시각에서 바라볼 수 있다. LCD 이후 OLED에 이르기까지 국내 디스플레이 산업은 세계 시장에서 주도권을 잃지 않고 있다. OLED의 뒤를 이을 차세대 디스플레이 기술로 QLED가 가장 유망하고, QLED에 대한 정부 및 기업도 큰 관심을 갖는 만큼, 국내 디스플레이 산업의 발전과 세계시장 주도권 유지를 위해 보다 적극적인 R&D 투자, 연구 확대 등이 필요한 상황이다. 이를 바탕으로 머지않은 미래에 QLED가 디스플레이로 활용되기를 기대해 본다.

• Journal of the Korean Mathematical Society
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• v.36 no.2
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• pp.381-402
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• 1999

Let {Rn($\chi$)}{{{{ { } atop {n=0} }}}} be a discrete Sobolev orthogonal polynomials (DSOPS) relative to a symmetric bilinear form (p,q)={{{{ INT _{ } }}}} pqd$\mu$0 +{{{{ INT _{ } }}}} p qd$\mu$1, where d$\mu$0 and d$\mu$1 are signed Borel measures on . We find necessary and sufficient conditions for {Rn($\chi$)}{{{{ { } atop {n=0} }}}} to satisfy a second order difference equation 2($\chi$) y($\chi$)+ 1($\chi$) y($\chi$)= ny($\chi$) and classify all such {Rn($\chi$)}{{{{ { } atop {n=0} }}}}. Here, and are forward and backward difference operators defined by f($\chi$) = f($\chi$+1) - f($\chi$) and f($\chi$) = f($\chi$) - f($\chi$-1).

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.117-117
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• 2007

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.183-187
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• 2006

We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.535-538
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• 2011

The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs selfassembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of lnAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.

• Bulletin of the Korean Mathematical Society
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• v.57 no.4
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• pp.1061-1073
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• 2020

In this paper, the expressions of meromorphic solutions of the following nonlinear complex differential equation of the form $$f^n+Qd(z,f)=\sum\limits_{i=1}^{3}pi(z)e^{{\alpha}_i(z)}$$ are studied by using Nevanlinna theory, where n ≥ 5 is an integer, Q_d(z, f) is a differential polynomial in f of degree d ≤ n - 4 with rational functions as its coefficients, p₁(z), p₂(z), p₃(z) are non-vanishing rational functions, and α₁(z), α₂(z), α₃(z) are nonconstant polynomials such that α'₁(z), α'₂(z), α'₃(z) are distinct each other. Moreover, examples are given to illustrate the accuracy of the condition.

• Journal of Multimedia Information System
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• v.5 no.3
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• pp.155-162
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• 2018

Nowadays, the tracking technology of Quadrant Detector will become actual by new micro devices. Based on the past filed data of the reception experiment with COMETS satellite, we have studied on new device (AD8302, phase difference detector) was acquired and suspect its abilities. In 1998, we have developed a Quadrant Detector for mobile to track a weak signal from satellite on Ka band of COMETS. The Quadrant Detector is comprised of four dedicated feed components for reception under an environment of Nakagami - Rician fading, and one transmission and reception feed component. We were successful in receiving a 23 GHz beacon signal from ICE transponder of the COMETS and succeeded in tracking the satellite from a moving vehicle at speeds of approximately 10 ~ 20 Km/h on paved roads. In 2018, with new device AD8302, we have verified new QD system and performed a simulation, based on the past filed experiment. This new device shall be improving the tracking abilities from mobile body on the earth to the multimedia satellite.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.330-330
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• 2006

The elaboration of fluorescent submicronic polymer particles exhibiting narrow particle size distribution as well as good photostability is of particular interest in various biomedical applications. In the frame of this work, labeled polystyrene latexes have been synthesized by miniemulsion polymerization using luminescent semiconductor nanoparticles (quantum dots, QD). The influence of incorporation of QDs on the polymerization kinetics as well as on the optical properties of the obtained latexes will be discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.131-135
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• 2006

High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000 $cm^2/V-s$ and 20,000 $cm^2/v-s$ can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.