• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.12 no.7
• /
• pp.1191-1198
• /
• 2001

MMIC low noise amplifiers for millimeter-wave application using 0.15 $\mu$m pHEMT have been presented in this paper. The design emphasis is on active device model and EM simulation. The deficiency of conventional device models is identified. A distributed device model has been adapted to circumvent the scaling problems and, thus, to predict small signal and noise parameters accurately. Two single-ended low noise amplifier are designed using distributed active device model for Q-band(40 ∼ 44 GHz) and V-band(58 ∼65 GHz) application. The Q-band amplifier achieved a average noise figure of 2.2 dB with 18.3 dB average gain. The V-band amplifier achieved a average noise figure of 2.9 dB with 14.7 dB average gain. The design technique and model employed provides good agreement between measured and predicted results. Compared with the published data, this work also represents state-of-the-art performance in terms of gain and noise figure.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.41 no.4
• /
• pp.45-50
• /
• 2004

In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.

• ETRI Journal
• /
• v.24 no.3
• /
• pp.190-196
• /
• 2002

This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low noise amplifiers using a $0.15{\mu}m$ commercial pHEMT process. After carefully investigating design considerations for millimeter-wave applications, with emphasis on the active device model and electomagnetic (EM) simulation, we designed two single-ended low noise amplifiers, one for Q-band and one for V-band. The Q-band two stage amplifier showed an average noise figure of 2.2 dB with an 18.3 dB average gain at 44 GHz. The V-band two stage amplifier showed an average noise figure of 2.9 dB with a 14.7 dB average gain at 65 GHz. Our design technique and model demonstrates good agreement between measured and predicted results. Compared with the published data, this work also presents state-of-the-art performance in terms of the gain and noise figure.

• International Journal of Aeronautical and Space Sciences
• /
• v.16 no.3
• /
• pp.445-450
• /
• 2015

Generally, Low Earth Orbit (LEO) satellites are used to collect image or video from earth's surface. The collected data are stored on-board and/or transmitted to the main ground station directly or via polar ground station using terrestrial line. Today, an intersatellite link between a LEO and a GEO satellite allows transmission of the collected data to the main ground station through the GEO satellite. In this study, an approach for a continuous communication starting from LEO through GEO to ground station is proposed by determining the optimum ground station locations. In doing so, diverse ground stations help to determine the GEO orbit as well. Cross-correlation of the long term daily rainfall averages are multiplied with the logarithmic correlation of the sites to calculate the joint correlation of the diverse ground station locations. The minimum values of this joint correlation yield the optimum locations of the ground stations for Q/V-band communication and satellite control operations. Results for several case studies are listed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.183-186
• /
• 1999

A 900 71Hz RF band-pass amplifier for wireless communication systems is designed and fabricated. HSPICE simulation results show that the amplifier can achieve a tunable center frequency between 880 MHz and 920 MHz. The gain of designed amplifier is 19 dB at Q=88, and the power dissipation is about 61 mW under 3 V power supply by using the spiral inductor with negative-7m circuit and center frequency tunning circuit. The designed band-pass amplifier is implemented by using 0.6 um 2-poly-3-metal standard CMOS process.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.4
• /
• pp.173-178
• /
• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.9
• /
• pp.62-66
• /
• 2016

This paper presents a MedRadio-band low power low noise amplifier for Medical Devices. A proposed MedRadio-band low power low noise amplifier adopts a current-reuse resistive feedback topology to increase overall gm and reduce power consumption. The gain of the LNA increases by the Q-factor of the additional series RLC input matching network, and its noise figure is minimized by the similar factor. Furthermore, it consumes low power because of low supply voltage and current reuse technique. By exploiting the $g_m$-booting and matching network property, the proposed MedRadio-band low noise amplifier achieves a noise figure of 0.85 dB, a voltage gain of 30 dB, and IIP3 of -7.9 dBm while consuming 0.18 mA from a 1 V supply voltage in $0.13{\mu}m$ CMOS technology.

• Proceedings of the KIEE Conference
• /
• 2005.07b
• /
• pp.1506-1508
• /
• 2005

VCO(voltage controlled oscillator) using mobile communication device decides direct characteristics as parts that affect important in stable oscillation and distortion characteristics of system. VCO used 900 MHz band was designed by the transformation of Colpitts circuit form use ADS that consider Q-factor to minimize phase noise. VCO manufactured together evaluation board and voltage control oscillator to FR-4 PCB. VCO experimented chracteristics after control through resonance department tuning. In our research, the designed VCO has 15.5 dBm output level at the bias condition of 6V and 10mA and the operating frequency range of 917 MHz$\sim$937 MHz band. Phase noise is -98.28 dBc/Hz at 1 MHz frequency offset from the carrier.

• Bulletin of the Korean Chemical Society
• /
• v.25 no.2
• /
• pp.298-300
• /
• 2004

An alternative molecular porphyrin-phthalocyanine aggregate was prepared and characterized with UV-visible and X-ray absorption spectroscopies. UV-visible experiments evidence 1-dimensional porphyrin-phthalo-cyanine array formed by mixing $SnTPPCl_2 ({\lambda}_{max}=429,\;{\varepsilon}=2.4{\times10^ 5 /M{\cdot}cm)\;and\;NiPc(OBu)_8({\lambda}_{max}=744 nm,\;{\varepsilon}= 2.0{\times}10^ 5 /M{\cdot}cm)$ in solution. In the UV-visible spectrum of the porphyrin-phthalocyanine array, $(SnPNiPc)_n$, a new Q-band appeared at 844 nm with decrease of the Q-band peak of $NiPc(OBu)_8$ at 744 nm. The red-shift of Q-band evidences an alternative porphyrin-phthalocyanine array formed in solution through metal-halide interaction rather than ${\pi}-{\pi}$ facial interaction, in which nickel of $NiPc(OBu)_8$ coordinates with chloride of $SnTPPCl_2$ through self assembly. Ni K-edge XANES (X-ray absorption near edge structure) spectra also support the axial ligation of nickel to chloride. The square planar structure of $NiPc(OBu)_8$ turns to an octahedral structure in (SnPNiPcSnP) by axial ligation. A higher energy-shift (0.2 eV) of the preedge peak of (SnPNiPcSnP) indicaties partial oxidation of nickel by charge transfer from NiPc$(OBu)_8$ to SnTPPCl$_2$.

• Proceedings of the IEEK Conference
• /
• 2002.07a
• /
• pp.86-89
• /
• 2002

A new design approach for realising low-power low-voltage high-Q high-order RE bandpass filter is proposed. Based on the gyrator-C inductor topology, a 2$\^$nd/-order biquadratic bandpass filter can be realised by adding a series capacitor to the input port of the gyrator. High-Q 2$\^$nd/-order and 4$\^$th/-order fully differential RF bandpass filters operating in the 2.4-㎓ ISM (Industrial, scientific and medical) frequency band under a 2-V single power supply voltage with low power dissipation are reported.