• 한국컴퓨터산업학회논문지
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• 제2권4호
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• pp.565-572
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• 2001

최근 고체 레이저 출력측에 비선형 광학재료를 설치하여 적외선에서 자외선에 이르기까지 넓은 대역의 파장을 가진 레이저광이 요구된다. 비선형 광학소자는 고조파발생기와 파라메터 발생기와 같은 레이저원을 이용한 주파수 전 영역까지 확장 할 수가 있다. 주파수 변환은 고전력 레이저를 이용한 확장기술에 많이 이용하고있다. 새로운 각 주파수 대역에서 광학 매개체의 비선형 광학의 응답 등을 이용할 수가 있다. 이러한 과정들은 자외선영역에서 적외선까지 고전력 방사발생을 이용할 수가 있다. 광학 파라메터발생기와 증폭기는 저주파수에서 2가지 파장 등을 발생한다. 싱글 주파수원으로부터 발생하여 몇몇의 경우에는 가시광선 영역에서 거의 자외선 영역까지 이용할 수가 있다. 결과적으로 녹색광을 얻기 위해서, 펄스형Nd:YAG 레이저는 다단펄스 포밍회로를 이용하였고 비선형광학(KTP)소자를 채택하여 적용하였다. 따라서 본 연구에서는 펄스 중첩법을 이용하여 기본파로서 직접 설계 제작 후 SHG 장치를 장착하여 녹색광을 얻고 각 중첩 메쉬에 같은 에너지를 인가했을 때의 레이저 출력과 녹색광 출력간의 상관관계와 메쉬 수에 따른 변환효율을 조사하였다.

• Current Optics and Photonics
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• 제3권3호
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• pp.243-247
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• 2019

We have developed a compact, wavelength-selectable, Q-switched Nd:YAG laser at mid ultraviolet for chemical warfare agent detection. The fundamental wave at 1064 nm is delivered by a pulsed solid state laser incorporating with a square-type Nd:YAG rod in a resonator closed by two crossed Porro prisms for environmental reliability. The output energy at 213 nm ($5{\omega}$) and 266 nm ($4{\omega}$) by ${\chi}^{(2)}$ process in the sequentially disposed BBO crystals are measured to be 6.8 mJ and 15.1 mJ, respectively. The output wavelength is selected for $5{\omega}$ and $4{\omega}$ by a motorized wavelength switch. The energy ratio of the $5{\omega}$ to the $4{\omega}$ is varied from 0.05 to 0.85 by controlling the phase matching temperature of the nonlinear crystal for sum-frequency generation without change of the output pulse parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.355-357
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• 2001

ZnO thin films were deposited on (001) sapphire substrate at various ambient gas pressure by pulsed laser deposition(PLD). Oxygen was used as ambient gas, and oxygen gas pressure was varied from 1.0${\times}$10$\^$-6/ Torr to 500 mTorr during the film deposition. As oxygen gas pressure increase in the region below critical pressure photoluminescence(PL) intensity in UV and green region increase. As oxygen gas pressure increase in the region above critical pressure photoluminescence(PL) intensity in UV and green region decrease. Each of critical ambient gas Pressures was 350 mTorr for UV emission and 200 mTorr for green emission.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• 한국결정학회:학술대회논문집
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• 한국결정학회 2003년도 춘계학술연구발표회
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• pp.6-6
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• 2003

Highly crystalline 5H-polytypic form of sp3-bonded boron nitride (BN) was grown by pulsed-laser-vaporization of BN, where synchronous reactive-plasma packets assisted the crystal growth in the vapor phase. The structure of the product crystallites (˙5 micrometers) was confirmed by using transmission electron diffraction and electron energy loss spectroscopy. This material proved to have a sharp and dominant band at 225 nm by cathode luminescence at room temperatures and corresponding monochromatic images revealed that they uniformly emitted the ultraviolet light. Considering that cubic BN has already been doped as p- and n- type semiconductors, this material may be applied to the light-emitting devices working at almost the deepest limit of the UV region that is functional without vacuum.

• 조명전기설비학회논문지
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• 제26권6호
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• pp.29-37
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• 2012

As the demand for the fresh non-thermal food is increased, it is required to develop the fast and perfect sterilization method. The conventional sterilization method using ultraviolet lamp has some disadvantages such as imperfect sterilization and longer process time. In this research, IPL(Intense Pulsed Light) sterilization system is introduced to overcome the drawbacks of the conventional system, and suitable power supply architecture for the system is discussed. Since the IPL sterilization system uses Zenon lamps which requires the 600~2,100[V] for the lightning and 16~30[kV] for the trigger, the converter for the system should be able to generate the high voltage and to discharge the large amount of energy instantaneously. In this research a new power system architecture which has a modified forward converter topology with two switches for generating high voltage and a capacitor bank to control the energy for the lightning by switching is introduced.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.818-824
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• 2008

The Separated Pulsed Laser Deposition (SPLD) technique uses two chambers that are separated by a conic metallic wall with a central orifice. The pressures of ablation chamber and deposition chamber were controlled by the differential vacuum system. We deposited zinc oxide (ZnO) thin films by SPLD method to obtain high quality thin films. When the bias voltage of +500 V was applied between a substrate and an orifice, the ZnO thin film was deposited efficiently. The deposited ZnO thin film at ablation chamber gas pressure of Ar 5 mTorr showed the sharpest ultraviolet absorption edge indicatory the band gap of about 3.1 eV. ZnO thin films were deposited using effect of electric and magnetic fields in the SPLD method. E${\times}$B drift happened by an electric fields and a magnetic fields, activated plasma plume, as a result the film surface became very smooth. When the bias voltage of +500 V and magnet of 0,1 T were applied the ZnO thin films surface state showed high quality. Grain size was 41.99 nm and RMS was 0.84 nm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.176.2-176.2
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• 2013

Property of optical diagnostics for pulse-discharged plasma in liquid and its biological applications to proteins are investigated by making use of high voltage Marx generator. The Marx generator has been consisted of 5 stages, where each charging capacitor is 0.5 ${\mu}F$, to generate a high voltage pulse with rising time of $1{\mu}s$. We have applied an input voltage of 6 kV to the each capacitor of 0.5 ${\mu}F$. High voltage pulsed plasma has been generated inside a polycarbonate tube by a single-shot operation, where the breakdown voltage is measured to be 7 kV, current of 1.2 kA, and pulse width of ~ 1 ${\mu}s$ between the two electrodes of anode-cathode whose material is made of tungsten pin, which are immersed into the liquids. We have investigated the emitted hydrogen lines for optical diagnostics of high voltage pulsed plasma. The emission line of 656.3 nm from $H-{\alpha}$ and 486.1 nm from $H-{\beta}$ have been measured by a monochromator. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium conditions, the electron temperature and density of the high voltage pulsed plasma in liquid could be obtained by the Stark broadening of optical emission spectroscopy. For the investigation of the influence of pulsed plasma on biological proteins, we have exposed it onto the proteins such as hemoglobin and myoglobin. The structural changes in these proteins and their analysis have also been obtained by circular dichroism (CD) and ultraviolet (UV) visible spectroscopy.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.79-85
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• 2017

The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

• 상하수도학회지
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• 제26권2호
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• pp.313-319
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• 2012

This study investigated the relative degradation of commonly known endocrine-disrupting compounds such as bisphenol A (BPA) and 17${\beta}$-estradiol (E2) using ultrasound (US) and pulsed ultraviolet (PUV) in water. The removal efficiency of BPA and E2 was determined as a function of generating power and $H_{2}O_{2}$ production. The ultrasound and PUV irradiation of the aqueous solution was performed in 3 L and 90 L stainless reactor at a constant temperature of $20^{\circ}C$ with an applied power of 200 W and 2000 W, respectively. The removal of BPA and E2 by US and PUV varied with catalysts. The experiments were conducted under the following conditions: total operating time, 30 min; initial concentration, 1 uM. In the case of E2 (10 min), % removal was 92.5/95.8/87.6/82.4, while % removal of BPA (10 min) was 62.3/82.3/91.1/67.0/64.3 in various conditions (PUV, $PUV+H_2O_2$, PUV+wire mesh, $PUV+TiO_2$ coated wire mesh), respectively.