• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.297-297
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• 2008

Buffer layers play an important role in the development of high critical current density coated conductor. $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ buffer layers were compatible with MgO surfaces and also provide a good template for growing high current density REBCO(RE=Rare earth) films. Systematic studies on the influences of pulsed laser deposition parameters (deposition temperature, deposition pressure, processing gas, laser energy density, etc.) on microstructure and texture properties of $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ films as buffer layer deposited on ion-beam assisted deposition MgO (IBAD_MgO) template by pulse laser deposition method, were carried out. These results will be presented together with the discussion on the possible use of this material in HTS coated conductor as buffer.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.358-364
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• 2009

We investigated the growth of ZnO thin films with prominent emission characteristics through minimizing the formation of defects by using pulsed laser deposition (PLD). To do so, the ZnO films were deposited on sapphire(0001) substrates at the substrate temperature of $400-850^{\circ}C$ and then the variation of their structural and optical properties were analyzed by x-ray diffraction, atomic force microscope and photoluminescence. As a result, all ZnO films were grown with c-axis preferential orientation irrespective of the substrate temperature. However, the crystallinity and stress state were dependent on the substrate temperature and the ZnO film deposited at $600^{\circ}C$ showed the best surface morphology and crystallinity with nearly no strain. And also this film exhibited outstanding emission characteristics from the viewpoint of full width half maximum of UV emission peak as well as visible emission due to defects. These results indicate that the emission characteristics of the ZnO films are strongly related to their structural characteristics influenced by substrate temperature. Consequently, ZnO films with strong UV emission and nearly no visible emission, which are applicable to UV emission devices, could be grown at the substrate temperature of $600^{\circ}C$ by PLD.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.271-274
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• 2005

We investigated the crystalline and electrical properties of ZnO thin films for transparent electrode as a function of the oxygen pressures during the deposition. The ZnO thin films were deposited on a flexible teflon substrates by the pulsed laser deposition. From the X-ray diffraction, ZnO films showed c axis oriented ZnO(0002) crystal structure. The FWHM (full width at half maximum) values decreased from $0.51^{\circ}\;to\;0.34^{\circ}$ as the oxygen pressure increased from 0.1 mTorr to 10.0 mTorr showing the improvement of crystallinity. The resistivity and hall mobility of ZnO film deposited at the oxgen pressure of 0.1 mTorr at $200^{\circ}C$ was about $5\times10^{-4}\Omega{\cdot}cm\;and\;20cm^2/V{\cdot}s$, respectively. The optical transmittance of the ZnO films on flexible teflon substrate was found to be above $85\%$.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.179-183
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• 2000

For a ground plane in high-temperature superconducting ramp-edge junction devices, YBa$_2$Cu$_3$O$_{7-{\delta}}$/SrTiO$_3$/YBa$_2$Cu$_3$O$_{7-{\delta}}$ multilayer structures were fabricated using pulsed laser deposition and ECR ion milling. Various process parameters were adjusted to enhance the device characteristics. By etching the STO layer to form a tapered edge of about 15$^{\circ}$ and in-situ RF plasma treatment of bottom YBCO surface prior to deposition of top YBCO, the top-to-bottom YBCO showed T$_c$ of 75${\sim}$80 K and I$_c$ of about 40 mA through holes. It was found that the deposition of bottom YBCO at a reduced laser repetition rate of 1Hz increased the T$_c$ of top YBCO to 79.9 K. The resistivity of 570 layer was about 10$^6$ ${\Omega}$cm at 60 K, which ensures good electrical isolation between successive YBCO layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.66-74
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• 2000

The structural and electrical characteristics of SBT thin films, fabricated on Pt/Ti/SiO\ulcorner/Si substrates by a pulsed laser deposition(PLD), were investigated to develop ferroelectric thin films for capacitor lay-ers of FRAM. EFfects of target composition on the characteristics of SBT thin films were examined. Target were prepared by mixed oxide method, and composition of Sr/Bi/Ta on SBT was changed to 1/2/2, 1/2.4/2, 1/2.8/2, 0.8/2/2 and 1.2/2/2. SBt thin films were fabricated, as a function of substrate temperature and oxygen pressure, by PLD. The optimized ocndition, to fabricate high quality SBT thin films, was 700 $^{\circ}C$ of substrate temperature, 200 mTorr of oxygen pressure, and 2 J/$\textrm{cm}^2$ of laser energy density. Maximum remnant value(2Pr) of 9.0 $\mu$C/$\textrm{cm}^2$, coercive field value(Ec) of 50 kV/cm, dielectric constant value of 166, and leakage current densities of <10\ulcorner A/$\textrm{cm}^2$ were observed for the films with 1/2/2 composition, which was prepared at the above PLD condition.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.251-265
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• 2000

S $m_{2}$F $e_{17}$ $N_{x}$ film magnets using a S $m_{2}$F $e_{17}$ target were prepared at $N_{2}$ gas atmosphere using a Nd-YAG laser ablation technique. The effect of nitrogen pressure, deposition temperature, pulsation time and film thickness on the structure and magnetic properties of S $m_{2}$F $e_{17}$ $N_{x}$ film were studied. Increasing the nitrogen pressure up to 5 atm. was confirmed to lead the formation of complete S $m_{2}$F $e_{17}$ $N_{x}$ compound. Optimized magnetic properties with the nitrogenation temperature ranging over 500-53$0^{\circ}C$ could be obtained by extending the nitrogenation time up to 4 hours. Relatively low coercivities of 400~600 Oe were exhibited from the S $m_{2}$F $e_{17}$ $N_{x}$ films having the thickness of 50~100 nm while 4$\pi$ $M_{s}$ of 10~12 kG could be achieved. In-plane anisotropic characteristic, which was the basic goal in this study, was achieved by controlling the nitrogenation parameters.ameters.ers.ameters.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.33.1-33.1
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• 2010

BiFeO3 (BFO)는 강자성과 유전체 특성을 모두 구현할 수 있는 재료로서 연구가 활발히 진행되고 있다. BFO 박막을 제조하는 방법에는 sputtering, chemical solution deposition, pulsed laser deposition methods 등이 알려져 있으나, 이러한 방법들은 근본적으로 고 진공을 사용하거나, 고온에서의 열처리, 낮은 성막 속도 등의 문제점이 있어, 상온에서 비교적 쉽게 박막을 제조할 수 있는 Aerosol deposition에 관한 관심이 증가하고 있다. 본 연구에서는 BFO의 강자성, 강유전 특성을 향상시키기 위해 Ba(Cu1/3Nb2/3)O3 (BCN)를 첨가한 Ba(Cu1/3Nb2/3)O3 (BFO-BCN) 복합재료를 합성하였다. 합성한 마이크론 크기의 입자를 사용하여 나노 결정립 크기의 Ba(Cu1/3Nb2/3)O3 (BFO-BCN) 박막을 상온에서 진공 분말 분사 공정(Aerosol-Deposition)을 이용하여 제조하고, 강자성 및 강유전성 특성을 평가하였다. Aerosol deposition방법으로 제조된 BFO-BCN박막은 BFO박막에 비해 우수한 강자성과 강유전 특성 나타내었다.

• Journal of the Korean Electrochemical Society
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• v.15 no.4
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• pp.236-241
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• 2012

It is widely recognized that it is hard to prepare hydrophilic graphite nanoparticles because of their high crystallinity and inert characteristics. In this study, we successfully synthesized the hydrophilic graphite nanoparticles by using liquid phase pulsed laser ablation method which has been actively employed for the thin film deposition up to now. The obtained hydrophilic graphite showed an ultra-high dispersion stability in water, because the hydrophilic functional groups like carboxyl and carbonyl group was simultaneously introduced onto the graphite surface with the nanoparticle formation, as confirmed by FT-IR and zeta potential measurements. Finally, a markedly enhanced gas sensing ability for acetone was shown in comparison with the conventional carbon black for the carbon polymer composite sensor with polyethyleneglycol (PEG).

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.25-29
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• 1999

We have developed a laser molecular beam epitaxy system for the layer-by-layer growth of oxide thin films. Using this system, we could grow and control oxide thin films of LaAlO$_3$in a molecular layer epitaxy mode on the atomically flat SrTiO$_3$ substrate with a LaAlO$_3$single crystal target. Very clear RHEED oscillations were observed during to growth of a LaAlO$_3$ film for a long period under the optimized conditions of substrate temperature at $650^{\circ}C$, oxygen pressure at 1$\times$10\ulcorner torr, and an incident laser fluence of 4.6J/$\textrm{cm}^2$. The height of mono-layer-LaAlO$_3$ film grown during one period of RHEED intensity oscillation was 3.8$\AA$.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.422-424
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).