• KIEE International Transactions on Electrophysics and Applications
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• 제3C권2호
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• pp.43-47
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• 2003

Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.361-363
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• 1995

High quality $Y_1Ba_2Cu_3O_{7-x}$ thin films have been fabricated by pulsed Nd:YAG laser deposition using an unusual 'off-axis' target-substrate geometry. Various properties of superconducting $Y_1Ba_2Cu_3O_{7-x}$ thin films have been studied systematically as a function of oxygen pressure during the deposition, in both 'on-axis' and the unusual 'off-axis' target substrate geometry. In the 'off-axis' geometry, one can completely eliminate the so-called 'laser droplets' form the thin surface and thus obtain smooth high qualify films. It is found that films with optimum structural and electrical properties are obtained at a lower oxygen pressure range during the 'off-axis' deposition when compared with that required in the 'on-axis' deposition geometry.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.108-111
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• 2011

The semiconducting material of ZnO in II-VI group was well known as its good application for photo electronics, chemical sensors and field effect transistors due to the remarkable optical properties with wide energy band gap and great ionic reactivities. Up to now the growth of a good quality of ZnO film has been issued for better performances. Even though there were many deposition methods for making ZnO films, pulse laser deposition methods have been preferred for high crystalline films. In this report, the ZnO film was also created by pulsed laser deposition technique which also showed high crystalinity. By controlling several factors when deposited, it was investigated that the optimal condition for ZnO film formation. Mainly, oxygen partial pressures and growth temperatures were changed when ZnO films were synthesized and followed the characterization by HRXRD and AFM.

• 한국세라믹학회지
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• 제36권2호
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• pp.116-121
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• 1999

MgO 단결성 (100) 기판 위에 0.5 wt% Nb 첨가된 전기전도성의 SrTiO3 (Nb:STO) 박막을 Pulsed Laser Deposition 법으로 제조하였다. 산소압력, 타겟과 기판거리, 기판온도, 박막증착시간 등의 박막형성 조건을 다양하게 변화시켜 Nb:STO박막의 격자상수와 박막두께의 변화를 조사하였다. $700^{\circ}C$에서 제작한 0.5 wt% Nb doped SrTiO3 박막의 배향성은 산소분압변화에 따라(100), (110)과 (111)배향이 관찰되었고, 박막제조시의 산소분압이 79.8 Pa로 증가됨에 따라 격자상수는 감소하여 벌크값인 0.390 nm에 근접하였다. 증착시간증가에 따른 박막의 두께는 증착시간에 비례하여 증가하였고, 격자상수의 변화는 거의 없었다. 타겟과 기판사이의 거리가 멀어짐에 따라 박막의 두께는 감소하였으나, 격자상수에는 큰 변화가 없었고 박막두께분포의 균일성이 향상되었다.

• 한국전기전자재료학회논문지
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• 제13권1호
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• pp.60-65
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• 2000

The structural and electrical characteristics of PLZT thin films fabricated onto Pt/Ti/SiO\ulcorner/Si substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films were fabricated with different energy density by pulsed laser deposition. This PLZT thin films of 5000 thickness were crystallized at 600 $^{\circ}C$, 200 mTorr O\ulcorner pressure for 2 J/$\textrm{cm}^2$ laser energy density, the arain structure was transformed from planar to columnar grain. It was clearly noted from the SEM observations that oxygen pressured laser powers affect microstructures of the PLZT thin films. 14/50/50 PLZT this film showed a maximum dielectric constant value of $\varepsilon$\ulcorner=1289.9. P-E hysteresis loop of 14/50/50 PLZT thin film was flim ferro-electric. Leakage current density of 14/50/50 PLZT thin film was 10\ulcorner A/$\textrm{cm}^2$.

• Journal of Advanced Marine Engineering and Technology
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• 제20권5호
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• pp.93-102
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• 1996

Laser-induced plume and laser-target interaction during pulsed laser deposition are demonstrated for a lead zirconate titanate (PZT). A KrF excimer laser (wavelength 248nm) was used and the laser was pulsed at 20Hz, with nominal pulse width of 20ns. The laser fluence was~$16J/cm^2,$ with 100mJ per pulse. The laser-induced plasma plume for nanosecond laser irradiation on PZT target has been investigated by optical emission spectra using an optical multichannel analyzer(OMA) and by direct observation of the plume using an ICCD high speed photography. OMA analysis showed two distinct ionic species with different expansion velocities of fast or slow according to their ionization states. The ion velocity of the front surface of the developing plume was about $10^7$cm/sec and corresponding kinetic energy was about 100eV. ICCD photograph showed another kind of even slower moving particles ejected from the target. These particles considered expelled molten parts of the target. SEM morphologies of the laser irradiated targets showed drastic melting and material removal by the laser pulse, and also showed the evidence of the molten particle ejection. The physics of the plasma(plume) formation and particle ejection has been discussed.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.319-322
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• 2004

ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.617-619
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• 2001

The effect of the superconducting film thickness on the substrate temperature has been investigated. Superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition. The dependence of the orientation of YBCO film on thickness has been investigated by X-ray diffraction technique. X-ray diffraction indicated that the film orientation was changed by increasing the film thickness and by changing the substrate temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.252-255
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• 2003

The pulsed laser deposition process modeling is investigated using neural networks based on radial basis function networks and multi-layer perceptron. Two input factors are examined with respect to the PL intensity. In order to minimize the joint confidence region of fabrication process with varying the conditions, D-optimal experimental design technique is performed and photoluminescence intensity is characterized by neural networks. The statistical results were then used to verify the fitness of the nonlinear process model. Based on the results, this modeling methodology can be optimized process conditions for pulsed laser deposition process.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.105-108
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• 2005

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.