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http://dx.doi.org/10.4313/JKEM.2011.24.2.108

Investigating of the Properties of ZnO Film Synthesized by Pulsed Laser Deposition  

Choi, Jae-wan (School of Electrical Engineering, Korea University)
Ji, Hyun-jin (School of Electrical Engineering, Korea University)
Jung, Chang-Uk (Department of Physics, Hanguk University of Foreign Studies)
Lee, Bo-Hwa (Department of Physics, Hanguk University of Foreign Studies)
Kim, Gyu-Tae (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.2, 2011 , pp. 108-111 More about this Journal
Abstract
The semiconducting material of ZnO in II-VI group was well known as its good application for photo electronics, chemical sensors and field effect transistors due to the remarkable optical properties with wide energy band gap and great ionic reactivities. Up to now the growth of a good quality of ZnO film has been issued for better performances. Even though there were many deposition methods for making ZnO films, pulse laser deposition methods have been preferred for high crystalline films. In this report, the ZnO film was also created by pulsed laser deposition technique which also showed high crystalinity. By controlling several factors when deposited, it was investigated that the optimal condition for ZnO film formation. Mainly, oxygen partial pressures and growth temperatures were changed when ZnO films were synthesized and followed the characterization by HRXRD and AFM.
Keywords
ZnO film; PLD (pulsed laser deposition); Oxygen partial pressure; Growth temperature; HRXRD;
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