• Title/Summary/Keyword: Pulsed DC

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Thickness Dependent Properties of Al-doped ZnO Film Prepared by Using the Pulsed DC Magnetron Sputtering with Cylindrical Target (원통형 타겟 타입 Pulsed DC Magnetron Sputtering에서 두께 변화에 따른 Al-doped ZnO 박막의 특성 변화)

  • Shin, Beom-Ki;Lee, Tae-Il;Park, Kang-Il;Ahn, Kyoung-Jun;Myoung, Jae-Min
    • Korean Journal of Materials Research
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    • v.20 no.1
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    • pp.47-50
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    • 2010
  • Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

Development of a High Voltage Pulsed Power System for Electrostatic Precipitators (500MW 화력 발전소 전기 집진기용 고압 펄스 전원 장치 개발)

  • Kim, Won-Ho;Gang, Yu-Ri;Lee, Gwang-Hak;Kim, Jong-Su;Im, Geun-Hui;Kim, Cheol-U
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.49 no.12
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    • pp.807-812
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    • 2000
  • With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. One of the key technologies in the electrostatic precipitator (EP) is high voltage pulsed power supply, which affects the performance of the overall system. In this study, a high voltage microsecond pulse power supply for the EP is developed for 500MW coal power plants. The power supply has dc source and a pulsed one. The ratings of the dc and the pulse source are 60kV, 800mA and 70kV, 400mA, respectively. The width of pulse voltage is 140us and the max. pulse repetition frequency is 200Hz.

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Development of 140kV, 20mA Rated High Voltage Pulsed Power System for Pilot EP (140kV, 20mA급 Pilot 집진기용 고압 펄스 전원장치 개발)

  • Kim, Won-Ho;Kang, Iou-Ri;Lee, Kwang-Hak;Kim, Jong-Soo;Rim, Geun-Hie;Kim, Chul-U
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.2
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    • pp.73-78
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    • 2001
  • With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. One of the key technologies in the electrostatic precipitator(EP) is high voltage pulsed power supply, which affects the performance of the overall system. In this study, a high voltage microsecond pulse power supply for the pilot EP is developed. The power supply has a dc source and a pulsed one. The ratings of the dc and the pulse source are 60kV and 70kV respectively. The width of pulse voltage is 140us and the maximum pulse repetition frequency is 200Hz.

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High voltage pulse circuit based on current source for Pulsed Electric Field method (펄스 전기장 방식을 위한 전류원 기반의 고전압 펄스 발생 회로)

  • OH, Hyun Jun;kang, Yoonsu;Hwang, Hoonha;Roh, Chung Wook
    • Proceedings of the KIPE Conference
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    • 2020.08a
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    • pp.230-232
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    • 2020
  • 식품을 보다 신선하고 오래 보관하기 위하여 처리 및 보존에 관한 여러 방법들이 연구되고 있다. 특히 열에 민감한 유제품 또는 액체 식품들에 대하여 열을 가하지 않는 비열처리 방식의 기술들이 연구되고 있다. 그 중 식품 내 미생물의 활성화와 고유한 속성의 변화를 최소화하는 방법으로 Pulsed Electric Field 방식에 대한 연구가 활발히 진행되고 있다. 하지만 해당방식은 기존의 열처리 방식에 비해 경제적인 면에서 단점을 가지고 있다. 이에 본 논문에서는 기존 Pulsed Electric Filed 방식의 효율을 높이고 비용을 저감할 수 있는 회로를 제안한다. 전압제어 방식의 DC/DC Power stage 부를 전류제어 방식으로 바꾸어 기존 회로의 Charging resistor를 사용하지 않음으로써 전력손실을 줄이고 비용 및 전기요금을 줄이고자 하였다. 본 논문에서는 시뮬레이션을 통해 제안회로를 검증하였다.

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The Digital Controlled Implementation of the Resonant DC-DC Converter with High Voltage, High Frequency For Pulsed Nd:YAG Laser (고전압과 고주파수형 공진형 DC-DC 콘버터를 이용한 펄스형 Nd:YAG 레이저의 디지틸제어 구현)

  • Kim, Whi-Young
    • Proceedings of the IEEK Conference
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    • 2001.09a
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    • pp.777-783
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    • 2001
  • This paper is mainly concerned with the state of the practical developments of a constants PWM bridge type resonants DC-DC suitable converter for Nd:YAG Laser with a Microprocessor. (PIC16C54 & 8051) The use of IGBT power supply with feedback control of flashLamp currents imparts a advantages to Nd:YAG Laser for materials processing. these include the alility to tailor the pulseshape and modify pulse parameters on a pulse- by pulse basis. And Correct choice of pulseshape can enhance the repeatability of the process. as higher power IGBT became available, act ive pulseforming power supplies will find greater user in deep hole drilling machine By Using certain control tecniques, utililized in designing Pic16c54 from Microchip technology and Intel 8051, also Mornitoring from Microsoft Visual Basic 5, And it allowed us to designed and fabricate ahigh repel it ion rate and high power(HRHP) pulsed Nd:YAG laser system, As a result of that, the current pulsewidth could be contort led 200s to 350s(step 50s) , and the pulse repetition rate could be adjusted 500pps to 1150pps. In addition, in the case of one laser head consisting of a Nd:YAG laser rod and two flashlamps , the maximum laser output of 240w was produced at the condition of 350s and 1150pps, and that of about 480w was generated at the same condition when two laser heads were arranged in cascade.

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Effect of process parameter of DC pulsed sputtering on optical reflectance of multi-layer thin films (DC펄스 스퍼터링 공정 변수가 다층 박막의 광 반사율에 미치는 영향)

  • Chung, Youn-Gil;Park, Hyun-Sik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.10
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    • pp.9-12
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    • 2016
  • The process parameters of DC pulsed sputtering to produce a multi-layer thin film with light reflectance at a specific wavelength region were studied. The optical simulation of multi-layer thin films of the silicon dioxide ($SiO_2$) films with a low refractive index and the titanium dioxide ($TiO_2$) films with a high refractive index was done. Under a DC pulsed sputtering power of 2kW and 200 sccm(standard cubic centimeter per minute) argon gas, the silicon dioxide films with a refractive index of 1.46 in the range of oxygen gas ratios of 12% and a titanium dioxide film with a refractive index of 2.27 in the range of oxygen gas ratios of 1% were produced. The multi-layer structure of high refractive index/low refractive index/high refractive index was designed and fabricated. The characteristics of the fabricated multi-layer thin film structure showed a reflectance of more than 45% in the range, 780 to 1200nm. This multi-layer structure is expected to be used to block the near infrared wavelength light.

Structural, electrical and optical properties of Al-doped ZnO thin films by pulsed DC magnetron sputtering

  • Ko, Hyung-Duk;Lee, Choong-Sun;Kim, Ki-Chul;Lee, Jae-Seok;Tai, Weon-Pil;Suh, Su-Jeong;Kim, Young-Sung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.4
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    • pp.145-150
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    • 2004
  • We have investigated the structural, electrical and optical properties of Al-doped ZnO (AZO) thin films grown on glass substrate by pulsed DC magnetron sputtering as functions of pulse frequency and substrate temperature. A highly c-axis oriented AZO thin film is grown in perpendicular to the substrate when pulse frequency of 30 kHz and substrate temperature of $400^{\circ}C$ was applied. Under this optimized growth condition, the resistivity of AZO thin films exhibited $7.40\times 10^{-4}\Omega \textrm{cm}$. This indicated that the decrease of film resistivity resulted from the improvement of film crystallinity. The optical transmittance spectra of the films showed a very high transmittance of 85∼90 % in the visible wavelength region and exhibited the absorption edge of about 350 nm. The results show the potential application for transparent conductivity oxide (TCO) thin films.

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

  • Kang, Junyoung;Le, Anh Huy Tuan;Park, Hyeongsik;Kim, Yongjun;Yi, Junsin;Kim, Sunbo
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.6
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    • pp.351-354
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    • 2016
  • The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of $2.68{\times}10^{-4}{\Omega}{\cdot}cm$, high hall mobility of $46.89cm^2/V.s$, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

Rat Hindlimb Allotransplantation with Short-term Immune Suppressants and Dendritic Cell Pretreatment (단기간 면역억제제와 수지상 세포주의 전처치를 이용한 복합조직 동종이식)

  • Eun, Seok-Chan;Baek, Rong-Min
    • Archives of Reconstructive Microsurgery
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    • v.21 no.1
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    • pp.34-40
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    • 2012
  • Prevention of acute rejection in composite tissue allotransplantation without continuous immunosuppression lacks reports in worldwide literature. Recently dendritic cells (DC) gained considerble attention as antigen presenting cells that are also capable of immunologic tolerance induction. This study assesses the effect of alloantigen-pulsed dendritic cells in induction of survival in a rat hindlimb allograft. We performed hindlimb allotransplantation between donor Sprague-Dawley and recipient Fischer344 rats. Recipient derived dendritic cells were harvested from rat whole blood and cultured with anti-inflammatory cytokine IL-10. Then donor-specific alloantigen pulsed dendritic cells were reinjected into subcutaneous tissue before limb transplantation. Groups: I) untreated (n=6), II) DC injected (n=6), III) Immunosuppressant (FK-506, 2 mg/Kg) injected (n=6), IV) DC and immunouppressant injected (n=6). Graft appearance challenges were assessed postoperatively. Observation of graft appearance, H-E staning, immunohistochemical (IHC) study, and confocal immunofluoreiscece were performed postoperatively. Donor antigen pulsed host dendritic cell combined with short-term immunosuppression showed minimal mononuclear cell infiltration, regulator T cell presence, and could prolong limb allograft survival.

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Ferromagnetic Resonance and X-Ray Reflectivity Studies of Pulsed DC Magnetron Sputtered NiFe/IrMn/CoFe Exchange Bias

  • Oksuzoglu, Ramis Mustafa;Akman, Ozlem;Yildirim, Mustafa;Aktas, Bekir
    • Journal of Magnetics
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    • v.17 no.4
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    • pp.245-250
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    • 2012
  • Ferromagnetic resonance and X-ray specular reflectivity measurements were performed on $Ni_{81}Fe_{19}/Ir_{20}Mn_{80}/Co_{90}Fe_{10}$ exchange bias trilayers, which were grown using the pulsed-DC magnetron sputtering technique on Si(100)/$SiO_2$(1000 nm) substrates, to investigate the evolution of the interface roughness and exchange bias and their dependence on the NiFe layer thickness. The interface roughness values of the samples decrease with increasing NiFe thickness. The in-plane ferromagnetic resonance measurements indicate that the exchange bias field and the peak-to-peak line widths of the resonance curves are inversely proportional to the NiFe thickness. Furthermore, both the exchange bias field and the interface roughness show almost the same dependence on the NiFe layer thickness. The out-of plane angular dependent measurements indicate that the exchange bias arises predominantly from a variation of exchange anisotropy due to changes in interfacial structure. The correlation between the exchange bias and the interface roughness is discussed.