• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.2
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• pp.174-180
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• 2008

The pulsed amplifier which switches the main supply voltage of RF amplifier according to input pulse signal has good efficiency and low noise level between pulses. And it has simple structure because it doesn't need a pulse modulator at input port. The pulsed amplifier using the conventional switching circuit has slow fall time compared to rise time. We proposed the novel switching circuit for improving the fall time of pulsed amplifier The proposed switching circuit is implemented by replacing FET of conventional circuit with BJT. As a result of appling this circuit to RF pulsed amplifier, the rise and fall time are 5.7 ns and 21.9 ns at 27 dBm output power, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.380-388
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• 2011

In this paper, we developed the X-band 63 watt pulsed SSPA(Solid State Power Amplifier) by using HMIC(Hybrid Microwave Integrated Circuits). The pulsed SSPA consists of power supply and 3-stage amplifier modules : pre-amplifier stage, driver-amplifier stage, final-amplifier stage. The developed pulsed SSPA provides more than 63 watts of output power with a short pulse width and the duty cycle of up to 1.2 % at $70^{\circ}C$. The fabricated module offers great than 37 dB of saturated gain across the operating band. Input and output VSWR is <1.5:1. This module has an average current of 400 mA typical and operates at a +28 $V_{dc}$ supply. The developed SSPA in this paper can apply to pulsed Doppler radar with high speed operation.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.91-96
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• 2005

In this paper, describes the design and performance of a 1.5 kW solid-state pulsed power amplifier, operating over 2.7-2.9 GHz at a duty of 10% and with a pulse width of 100 us for radar application. The solid-state pulsed power amplifier configures a series of 8-stage cascaded power amplifier with different RF output power levels. Low loss Wilkinson combiners are used to combine output powers of six 300W high power solid state modules. Tests show peak output power of 1.61 kW, corresponding to PAE of 26.2% over 2.7-2.9 GHz with pulse width of 100 us and a PRF of 1 kHz.

• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.162-168
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• 1999

A new design of four-pass dye laser amplifier affording a narrow-bandwidth pulsed output is demonstrated to suppress the amplified spontaneous emission(ASE) carried by the amplifier output and reduce the possibility of parasitic oscillation in the amplifier. By the direct pulsed amplification of a cw 100 mW dye laser under a Q-switched doubled Nd:YAG laser pumping with energy of 5.6 mJ/pulse, high-peak-power pulsed output with 1.5-mJ energy in 130-MHz bandwidth is obtained corresponding to a power gain greater than $2{\times}10^6$ and an energy efficiency of 27%. The ASE ratio in the four-pass amplifier output is dramatically reduced by using a diffraction grating in the amplifier. Compared with the results obtained from the normal operation of the amplifier with no frequency-selective device, the ASE ratio is reduced by a factor in excess of 10 to remain under 1.5% of the amplifier output whereas the total output energy is slightly increased by ~4%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.440-446
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• 2011

In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.92-95
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• 2016

In this paper, an UHF-band 1 kW solid-state pulsed power amplifier was designed and implemented for the thermoacoustic imaging(TAI) at 900 MHz. The designed power amplifier has a pulse width of $80{\mu}s$ and a duty cycle of 1 % for short-pulse operation. The overall amplifier was implemented by combining of 16 single-power amplifiers adopting MRFE6P9220HR3 LDMOSFET using wilkinson power dividers. The solid-state pulsed power amplifier shows 25 % drain efficiency with a gain of 76.2 dB when the output power is 60.2 dBm for a -16 dBm input power at center frequency.

• 한국ITS학회:학술대회논문집
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• 2004.11a
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• pp.323-327
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• 2004

• ETRI Journal
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• v.33 no.5
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• pp.679-688
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• 2011

A new discrete-amplitude pulse width modulation (DAPWM) scheme for a high-efficiency linear power amplifier is proposed. A radio frequency (RF) input signal is divided into an envelope and a phase modulated carrier. The low-frequency envelope is modulated so that it can be represented by a pulse whose area is proportional to its amplitude. The modulated pulse has at least two different pulse amplitude levels in order that the duty ratios of the pulse are kept large for small input. Then, an RF pulse train is generated by mixing the modulated envelope with the phase modulated carrier. The RF pulse train is amplified by a switching-mode power amplifier, and the original RF input signal is restored by a band pass filter. Because duty ratios of the RF pulse train are kept large in spite of a small input envelope, the DAPWM technique can reduce loss from harmonic components. Furthermore, it reduces filtering efforts required to suppress harmonic components. Simulations show that the overall efficiency of the pulsed power amplifier with DAPWM is about 60.3% for a mobile WiMax signal. This is approximately a 73% increase compared to a pulsed power amplifier with PWM.

• Journal of Satellite, Information and Communications
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• v.11 no.1
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• pp.1-5
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• 2016

In this paper, High Power Pulsed Amplifier with wide-band characteristic is implemented for L-band Navigational Aid(NAVAID). Due to the characteristics of L-Band NAVAID, implemented SSPA is demanded characteristics of high RF power, high linearity and high efficiency. Therefore, in this paper, efficiency characteristic is improved by modified class F technique. And linearity characteristic is improved by balance structure using hybrid coupler, $2^{nd}$ & $3^{rd}$ harmonic trap and anti-phase technique using non-linear characteristics of drive amplifier. Implemented SSPA shows that bandwidth of 300MHz, RF Output power of 1.5KW and efficiency of 55%.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.4
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• pp.484-491
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• 2008

In this paper, we design and fabricate the L-band high speed pulsed HPA using LDMOS FET. And we propose the high voltage and high speed switching circuit for LDMOS FET. The pulsed HPA using LDMOS FET is simpler than using GaAs FET because it has a high gain, high output power and sin81e voltage supply. LDMOS FET is suitable for pulsed HPA using switching method because it has $2{\sim}3$ times higher maximum drain-source voltage(65 V) than operating drain-source voltage($V_{ds}=26{\sim}28\;V$). As results of test, the output peak power is 100 W at 1.2 GHz, the rise/fall time of output RF pulse are 28.1 ns/26.6 ns at 2 us pulse width with 40 kHz PRF, respectively.