• Proceedings of the Korean Society of Precision Engineering Conference
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• 1994.10a
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• pp.156-160
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• 1994

Use of engineering ceramics has been increasing due to the outstanding physical and chemical properties. Conventional machining processes, however, are not applicable due to their hardness and brittleness. Laser cutting is a promising alternative for these ceramics. In this study, experimental data of CO $_{2}$ laser cutting of $Al_{2}$ $O_{3}$ and Si $_{3}$ N $_{4}$ are obtained to give a guide in the industry. Results of $Al_{2}$ $O_{3}$ cutting showed extreme weakness to thermal crack and it was found that pulsed beam has to be used for thick $Al_{2}$ $O_{3}$ specimen. Si $_{3}$ N $_{4}$ showed good results for both CW and pulsed beams. Using pulsed beam resulted narrower kerf width with increased surface roughness a nd reduced cutting speed. It was also found that a parameter call path energy is useful for representing minimum threshold value for possible cutting range with pulsed beam.

• Journal of Surface Science and Engineering
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• v.44 no.5
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• pp.179-184
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• 2011

This work investigated the effect of duty cycle and pulse frequency on the microstructures and properties of titanium nitride thin films deposited by asymmetric bipolar pulsed DC sputtering system. Oscilloscope traces of the I-V waveforms indicate high power and high current density outputs during the asymmetric bipolar pulsed mode. The grain size decreases with decreasing duty cycle. The duty cycle has a strong influence not only on the microstructural properties but also on the mechanical properties of titanium nitride films. Comparing with the continuous DC sputtering, the titanium nitride films prepared by pulsed DC asymmetric bipolar process exhibit better properties.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.297-300
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• 1988

The ultrasound Doppler effect is used for measuring the velocity of the bloodflow in an artry. Because of the range information, the pulsed doppler system is most commonly used. In this paper, we propose a new pulsed doppler system which uses a quadrature sampling method in R.F. range in order to detect the bloodflow direction and to simplify the compexity of hardware. The pulsed doppler system using quadrature sampling method in R.F. range eliminates In-phase, Quadrature phase channel balancing problem at demodulator. In addition, the improved pulsed Doppler system shows the possibility of serial processing.

• Journal of Welding and Joining
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• v.15 no.5
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• pp.84-91
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• 1997

The metal transfer phenomenon of the pulsed-GMAW is simulated by formulating the electromagnetic force incorporated with the Volume of Fluid algorithm. The free surface profiles, pressure and velocity distributions within the drop are computed numerically. Axial velocity and acceleration generated during peak current period are found to have a significant effect on drop detachment. Therefore, the accelerated inertia force becomes one of important factors affecting metal transfer in the pulsed-GMAW. When the pulse current parameters are selected properly, the molten drop is detached just after current pulse, and the operating range of the pulsing frequency increases with higher peak current and duty cycle. Calculated operating ranges show reasonably good agreements with the available experimental data.

• Journal of Surface Science and Engineering
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• v.47 no.2
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• pp.86-92
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• 2014

The purpose of this comparative study was to investigate the properties of chromium nitride coatings deposited by asymmetric bipolar pulsed DC sputtering and DC sputtering system. Oscilloscope traces of the I-V waveforms indicate high power and high current density outputs during the asymmetric bipolar pulsed mode. The grain size decreases with decreasing duty cycle. The duty cycle has a strong influence not only on the microstructural properties but also on the mechanical properties of chromium nitride coatings. Comparing with the continuous DC sputtering, the chromium nitride coatings prepared by pulsed DC asymmetric bipolar process also exhibit better surface roughness.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.79-99
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• 2010

Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.139-139
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• 2011

DC magnetron sputtering과 DC pulsed magnetron sputtering을 이용하여 공정 압력별, $O_2$ 분압별, 온도등의 증착조건에 따른 IGZO 박막의 특성을 조사하였다. Working pressure 따른 deposition rate 측정한 결과 동일 파워 적용 시 DC magnetron sputtering 대비하여 DC pulsed magnetron sputtering 은 약 84% 수준에 머물렀으며, IGZO 박막 내에 $O_2$의 분압비가 증가함에 따라 투과도는 단파장 영역에서 장파장 영역으로 갈수록 상승 경향을 보였다. 캐리어 농도와 이동도 등 전기적 특성도 증가하는 경향을 보였다. 온도에 따른 전기적 특성을 비교 해 본 결과 상온과 $150^{\circ}C$ 영역에서는 유의차가 없었으며, DC pulsed magnetron sputtering의 경우 $50^{\circ}C$ 영역에서 변곡점이 형성됨을 알수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.123.1-123.1
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• 2013

반도체 공정에서는 사용하는 power source의 형태는 pulse-DC이다. Pulse-DC는 DC power에 비해 증착율이 좋고, 박막의 특성도 우수한 특성을 가진다. 이러한 장점에도 불구하고 pulse-DC나 DC power는 플라즈마 내 이온이 가지는 에너지가 크고, 이온화율도 낮다. 이러한 단점을 극복하기 위해 등장한 power source가 modulated pulsed power이다. Modulated pulsed power는 이온이 가지는 에너지가 DC power의 1/2 수준이며, 이온화율은 4배 이상 높은 특징을 가진다. 본 연구에서는 modulated pulsed power를 사용하여 Cr 박막을 Si wafer 위에 증착하여 박막의 특성을 관찰하였다. 연구에 사용된 power는 5 kV (800 V, 12.5 A), 20~120 KHz, 3 step까지 설정이 가능한 장비이며, base pressure $1.5{\times}10^{-6}$ Torr에서 실험이 진행되었고, 실험에 사용된 불활성 기체는 Ar을 사용하였다.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.98-100
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• 2018

This paper describes design of the 40-kV, 300-A solid-state pulsed power modulator for environmental applications. The modulator has been modified based on a solid-state pulsed power modulator with 150-A current capacity. To improve the pulsed power modulator, the discharge IGBT was changed. In addition, the gate driver was tuned according to the characteristics of the switch. Finally, experimental results proved the reliability of the modified solid-state pulsed power modulator.

• Journal of IKEEE
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• v.23 no.1
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• pp.230-234
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• 2019

This paper shows the development of current sensor for the measurement of hundreds of nanoseconds large current in pulsed power and its characteristics evaluation. The developed current sensor was designed for measuring induced voltage from magnetic flux under the operation of pulsed power. Output characteristics of developed current sensor was good consistent with commercial one, and the realistic current of fast pulsed power was detected easily with the calibration curve using output voltage of developed sensor. Therefore, the developed current sensor is possible to apply the realistic system.