• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.597-600
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• 2006

When the energy of the nanoseconds high voltage pulse with hundreds picoseconds of the pulse rise time is emitted into the free space via an antenna, an ultra wide band electromagnetic wave is generated. This electromagnetic wave is expected to be used in transmitting vast amount of informations to far distance, high performance radars, post-packaging pasteurization of food, the detection of underground buried objects, searching of underground water veins or caves, the treatment of waste water or polluted gases and so forth. Additionally, this technology can be used in EMI(electromagnetic interference) evaluation of measuring instruments or printed circuit boards.

• Journal of electromagnetic engineering and science
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• 제18권1호
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• pp.20-28
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• 2018

The time synchronization of each sub-unit of a pulsed generator is important to generate an output high-power radio frequency (RF) signal. To obtain the time synchronization between an input RF signal fed by an external source and an electron beam produced by an electric pulse generator, the influence of different charging voltages on a delay and a rise time of the output pulse waveform in the electric pulse generator should be carefully considered. This paper aims to study the timing characteristics of the delay and the rise time as a function of different charging voltages with a peak value of less than -35 kV in the high-voltage pulse generator, including a trigger generator (TG) and a pulse-forming line (PFL). The simulation has been carried out to estimate characteristics in the time domain, in addition to their output high-voltage amplitude. Experimental results compared with those obtained by simulation indicate that the delay of the output pulses of the TG and PFL, which are made by controlling the external triggering signal with respect to different charging voltages, is getting longer as the charging voltage is increasing, and their rise times are inversely proportional to the amplitude of the charging voltage.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제48권8호
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• pp.391-399
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• 1999

We have designed the backward wave oscillator, a power-pulsed generator oscillated at 20 GHz has higher frequency than current one. An absolute instability linear analysis was used for the purpose of designing the slow wave structure. A large diameter (D/$\lambda$=4.8) of the slow wave structure was adopted to prevent the breakdown brought about by the increase of power density. We have fabricated a marx generator, pulse forming line and diode. And the development of a compact pulsed power generator with short period and low amplitude is expected.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 F
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• pp.2067-2069
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• 1998

A prototype semiconductor switch for the command resonant charging system has been developed for a line type modulator, which charges parallel pulse forming network(PFN) up to voltage of 5 kV at repetition rates of 60 Hz. A phase controlled power supply provides charging of the 4.7 ${\mu}s$ filter capacitor bank to voltage up to 5 kV. A solid state module of series stack array of sixe matched SCRs(1.6 kV, 50 A) is used as a command charging switch to initiate the resonant charging cycle. Both resistive and RC snubber network are used across each stage of the switch assembly in order to ensure proper voltage division during both steady state and transient condition. A master trigger signal is generated to trigger circuits which are transmitted through pulse transformer to each of the 6 series switch stages. A pulse transformer is required for high voltage trigger or power isolation. This paper will discuss trigger method, protection scheme, circuit simulation, and test result.

• 한국표면공학회지
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• 제23권1호
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• pp.1-7
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• 1990

Ion implantation is a well established superior superior surface modification technique for the improvement of wear resistance, hardenece, hardness, corrosion resistance, biocompaibity, surface friction, as well as for the modification of surface electric conductance. Conventional ion implantaion is a line-of-sight process witch ues the ion beam accelerator techniques. Plasma sheath ion implantation (PSII), as a new technique, is described in this paper. In PSII high voltage pulse is applied to a target material placed directly in a plasma, forming a think ion-matrix sheath around the target. Ions accelerate through the sheath drop and bombard the traget from all sides simultaneosuslyregardless of the target shape. This paper describes the principle of PSII, which has non-line-of sight characteristics, as well as the experimental appratus.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.818-819
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• 2015

PAL-XFEL 장치에 사용 할 고전압 펄스 모듈레이터 출력파워는 수 ${\mu}s$ 범위의 짧은 고전압(400 kV), 대전류(500 A) 펄스를 요구한다. 이러한 펄스파워를 얻기 위해서 PFN(Pulse Forming Network)에 에너지를 축적하고, 플라즈마 스위치인 싸이라트론을 통하여 에너지를 신속하게 클라이스트론 쪽으로 전달한다. 클라이스트론은 모듈레이터에서 공급하는 펄스 전원을 이용하여 RF를 증폭하는 대출력 고주파 증폭장치이다. 고전압 펄스 모듈레이터 제어기는 고속펄스 신호처리 모듈(Fast Pulse Signal Conditioning Module), PLC(Programmable Logic Controller)로 구성되어 있다. 고전압 펄스 모듈레이터에 사용하는 대용량 싸이라트론은 고전력을 스위칭 할 때 발생하는 스위칭 노이즈는 매우 크다. 이러한 노이즈는 모듈레이터의 출력 시그널인 빔 전압, 빔 전류, EOLC(End of Line Clipper) 전류, DC high voltage에 섞여 있으면서 신호 왜곡 및 제어장치의 고장을 유발시킨다. 이처럼 노이즈가 많이 포함되어 있는 아닐로그 신호를 깨끗한 신호(a clean signal)로 바꾸어주는 노이즈 필터링 장치인 고속펄스 신호처리 모듈을 제작하여 실험한 결과를 알아보고 모듈레이터 인터록 시스템인 PLC에서 Dynamic Interlock의 응답시간을 빠르게 하기위한 회로 수정에 대한 결과에 관하여 기술하고자 한다.

• 한국인터넷방송통신학회논문지
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• 제11권5호
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• pp.87-93
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• 2011

근래에 EMP(electromagnetic pulse)의 위협이 증가하면서 이에 대한 방호 대책과 관련하여 전자파 보안 기술 개발의 필요성이 대두되고 있다. 그러나 해외에 비해 국내에서는 이에 관한 연구가 미진한 실정이다. 본 논문에서는 EMP에 대한 전자파 보안 기술 개발을 목적으로 EUT(equipment under test)의 EMP 내성을 시험할 수 있는 bounded-wave EMP simulator의 기본 형태인 평행판 simulator(parallel-plate simulator: PPS) 안테나를 설계하였다. 설계된 EMP simulator 안테나는 웨이브 런처, 전송 선로, 종단 테이퍼로 나누어 설계되었으며, 워킹 볼륨 내에서 가로, 세로, 높이가 30 cm 이내인 물체의 시험에 필요한 영역에 TEM 모드가 우세한 필드를 형성하여 EMP simulator로써 사용 가능할 것으로 보인다.

• 한국진공학회지
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• 제6권4호
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• pp.293-297
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• 1997

점성진공계(spinning rotor gauge, SRG)는 고진공영역인 1${\times}$10-5∼100Pa에서 전달표 준기(transfer standard gauge)로 사용되고 있는 진공게이지이다. 제조회사가 각각 Leybold-Heraeus와 MKS회사인 두 개의 SRG에 대해서 질소가스를 사용하여 장기안정성과 적응계수(accommodation coefficient, $sigma$)결정에 영향을 미치는 변수들인 측정압력, 온도, 최 대도달압력(base pressure), 신호분산(signal scattering), 영점(offset)변화에 대한 특성을 10 개월에 걸쳐 조사하였다. 이 결과 장기안정특성 및 입력변수들에 의한 영향이 SRG 고유오 차인 $pm$1.0% 이내에 있음을 확인하였다.

• Clinical and Experimental Pediatrics
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• 제64권11호
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• pp.559-572
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• 2021

The International Society for the Study of Vascular Anomalies classifies vascular anomalies into vascular tumors and vascular malformations. Vascular tumors are neoplasms of endothelial cells, among which infantile hemangiomas (IHs) are the most common, occurring in 5%-10% of infants. Glucose transporter-1 protein expression in IHs differs from that of other vascular tumors or vascular malformations. IHs are not present at birth but are usually diagnosed at 1 week to 1 month of age, rapidly proliferate between 1 and 3 months of age, mostly complete proliferation by 5 months of age, and then slowly involute to the adipose or fibrous tissue. Approximately 10% of IH cases require early treatment. The 2019 American Academy of Pediatrics clinical practice guideline for the management of IHs recommends that primary care clinicians frequently monitor infants with IHs, educate the parents about the clinical course, and refer infants with high-risk IH to IH specialists ideally at 1 month of age. High-risk IHs include those with life-threatening complications, functional impairment, ulceration, associated structural anomalies, or disfigurement. In Korea, IHs are usually treated by pediatric hematology-oncologists with the cooperation of pediatric cardiologists, radiologists, dermatologists, and plastic surgeons. Oral propranolol, a nonselective beta-adrenergic antagonist, is the first-line treatment for IHs at a dosage of 2-3 mg/kg/day divided into 2 daily doses maintained for at least 6 months and often continuing until 12 months of age. Topical timolol maleate solution, a topical nonselective beta-blocker, may be used for small superficial type IHs at a dosage of 1-2 drops of 0.5% gel-forming ophthalmic solution applied twice daily. Pulse-dye laser therapy or surgery is useful for the treatment of residual skin changes after IH involution.