• Korean Journal of Materials Research
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• v.9 no.5
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• pp.484-490
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• 1999

$(Pb,La)TiO_3$(PLT) thin films were prepared on Pt/SiO$_2$/Si substrates by the sol-gel method and investigated the crystalline and electrical properties according to La concentration and post-annealing temperatures. The PLT films annealed at above $600^{\circ}C$ were exhibited the typical perovskite structures regardless of La contents. When the $(Pb,La)TiO_3$(PT) films were doped with La concentration up to 10mol%(PLT-10), the degree of z-axis orientation was greatly decreased from 63% to 26%. From AES depth profiles for the PLT-10 samples, no remarkable inter-reaction between PLT film and lower Pt electrode was found. The remanent polarization$(2Pr,Pr_+-Pr_-)$ were increased from $4\muC\textrm{cm}^2 to 16\muC\textrm{cm}^2$ as the annealing temperature increased from $600^{\circ}C to 700^{\circ}C$. This result may be ascribed to the improvement of crystallinity by the high temperature post-annealing. The dielectric constant$({\varepsilon}r)$ and tangent loss(tan$\delta$) of the PLT-10 films annealed at $650^{\circ}C$ were about 193 and 0.02, respectively with the pyroelectric coefficient($\gamma$) of around $4.0nC/\textrm{cm}^2{\cdot}^{\circ}C at 30^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.46-51
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• 2003

Ferroelectric $Sr_{0.7}Bi_{2.1}Ta_{2.0}O_9$ thin films with 200 nm thicknesses were deposited on $Pt/Ti/SiO_2/Si$ substrate by liquid delivery MOCVD process. In these experiments, $Sr(TMHD)_2{\cdot}pmdeta,\; Bi(ph)_3$ and $Ta(O^i/Pr)_4(TMHD)$ were used as precursors, which were dissolved in n-butyl acetate and pentamethyldiethylenetriamine. Substrate temperature and reactor pressure of this experiment was $570^{\circ}C$and 5 Torr, respectively. The remanent polarization value (2Pr) of SBT thin film with annealed at $780^{\circ}C$was$7.247{\mu}C/cm^2$and$8.485 {\mu}C/cm^2$by applying 3 V and 5 V, respectively.

• Journal of the Korean Magnetics Society
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• v.20 no.6
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• pp.222-227
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• 2010

$BiFeO_3$ (BFO) thin films were deposited on Pt/Ti/$SiO_2$/Si(100) substrates by RF magnetron sputtering method at room temperature. The influence of the flow rate of $O_2$ gas on the preparation of $BiFeO_3$ thin films was studied. XRD results indicate that the $BiFeO_3$ thin films were crystallized to the perovskite structure with the presence of small amount of impurity phases. The flow rate of $O_2$ gas has great affect on the microstructures and magnetic properties of $BiFeO_3$ thin films. As flow rate of $O_2$ gas increased, roughness and grain size of the thin films increased. $BiFeO_3$ thin films exhibited weak ferromagnetic behavior at room temperature. The PFM images revealed correlation between the surface morphology and the piezoresponse, indicating that the piezoelectric coefficient is related to microstructure.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.18-21
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• 2007

The hexagonal $HoMn_{1-x}-Fe_xO_3$(x=0.00, 0.05) thin films were prepared using pulsed laser deposition(PLD) method on $Pt/Ti/SiO_2/Si$ substrate. The microstructure and magnetic properties have been studied by x-ray diffraction(XRD), atomic force microscopy (AFH), scanning electron microscope(SEM:), x-ray photoelectron spectroscopy(XPS), and conversion electron $M\"{o}ssbauer$ spectroscopy(CEMS). From the analysis of the x-ray diffraction patterns, the crystal structure for all films was found to be a hexagonal($P6_3cm$), which was preferentially grown along(110) direction. The lattice constant $c_0$ of the film with x=0.05 was close to that of single crystal, whereas lattice constant $a_0$ with respect to single crystal shows a slight decrease. This difference of lattice parameters between film and single crystal was caused by the lattice mismatch between the film and $Pt/Ti/SiO_2/Si$ substrate. Conversion electron $M\"{o}ssbauer$ spectrum of $HoMn_{0.95}Fe_{0.05}O_3$ thin film shows an asymmetry doublet absorption ratio at room temperature, which is due to the oriented direction of crystallographic domains. This is corresponding with analysis of x-ray diffraction. The quadrupole splitting(${\Delta}E_Q$) at room temperature is found to be $1.62{\pm}0.01mm/s$. This large ${\Delta}E_Q$ was caused by asymmetry environment surrounding Fe ion.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.803-810
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• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1030-1035
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• 2001

Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1434-1436
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• 1996

In this study, ferroelectric $PbTiO_3$ thin films were deposited on the Pt/$SiO_2$/Si substrate by Sol-Gel method. $PbTiO_3$ stock solution was made and spin-cooled at 4000[rpm] for 30[sec.]. Coated specimens were dried at $400[^{\circ}C]$ for 10[min.] and then annealed at $500{\sim}800[^{\circ}C]$ for 1 hour. Annealing temperature were examined to optimize micro structural and dielectric properties of the films. The ferroelectric perovskite phase was observed in the file annealed at $700[^{\circ}C]$ for 1 hour. In the case of $PbTiO_3$ thin films annealed at $700[^{\circ}C]$ for hour, dielectric constant and dielectric loss showed the good value of 324, 2.0[%], respectively.