• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.865-869
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• 2002

The structural and electrical properties of PZT (lead zirconate titante) thin films grown on Pt (platinum) and Ru/Ru $O_2$(ruthenium/ruthenium oxide) electrodes were investigated. Thin films of PZT were deposited on a variety of electrodes using the rf-magnetron sputtering process. PZT films exhibited polycrystalline structure with strong PZT (100) plane and weak (211) plane for an optimizied Pt electrode and (100), (101), (111), (200), (210), (211) planes for Ru/Ru $O_2$. Switching polarization versus fatigue characteristic of Pt/Ti electrodes showed 20% degradation up to 1 $\times$ 10$_{9}$ cycles. No significant fatigue was observed in the films on Ru/Ru $O_2$ electrodes up to Ix109 test cycles. The results show that the new Ru/Ru $O_2$ bottom electrodes are expected to reduce the degradation of ferroelectric fatigue.

• 한국진공학회지
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• 제16권5호
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• pp.343-347
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• 2007

Glass disk상에 대향 타겟식 스퍼터링(Facing Target Sputtering) 방식을 이용하여 $0.1\;{\AA}/s$의 낮은 증착속도로 증착시킬 경우 b.c.c. (100)면 우선배향성을 확인하였으며, 그 위에 Pt박막을 증착시킨 경우 hetero-epitaxial 성장에 의해 Pt박막이(111)의 조밀면이 아닌 (100)면이 우선배향 되었다. 이렇게 형성된 Fe (100)/Pt (100) 이층막(두께 각 3 nm)을 $600\;^{\circ}C$ 수소분위기에서 열처리함에 의해 막전체에 걸쳐서 f.c.t. (00n)면을 형성시키는 데 성공하고, 또한 Fe (100)면 상에 Pt 박막을 증착시키는 동안 열처리를 하고 증착 이후 수소분위기에서 열처리함에 의해 열처리 시간 및 온도를 크게 낮출 수 있음을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1986-1988
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• 1999

Ferroelectric lead zirconate titanate(PZT) thin films were prepared on various bottom electrodes by rf magnetron sputtering methode. The structural phase and surface morphology of the PZT thin films were largely affected by the bottom electrodes. P-E curves of PZT thin films deposited on Pt. $RuO_2$ and Ru/$RuO_2$ bottom electrode showed typical P-E hysteresis loop. The measure values of $P_r,\;E_c$ of the Ru/PZT/Ru/$RuO_2$ capacitor were $16.9{\mu}C/Cm^2$, 140kV/ cm, respectively. The Ru/PZT/Ru/$RuO_2$ capacitors were fatigue free uP to nearly $10^9$ switching cycle but Pt/PZT/Pt capacitor showed 34% degradation uP to $10^9$ switching cycle.

• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.10-13
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• 2005

$Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.341-344
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• 1999

The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.69-69
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• 2001

• 한국자기학회지
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• 제15권1호
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• pp.21-24
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• 2005

강자성, 초거대자기저항체인 $La_{0.67}Sr_{0.33}MnO_{3}$ 타겟을 이용하여 248nm의 파장을 갖는 KrF 엑시머 레이저를 사용한 PLD법으로 박막으 제작하고, 강유전체 물질인 $PbZr_{0.52}Ti_{0.48}O_{3}$ 물질을 spin coating 방법으로 제조하였다. Pt 기관(111)위에 125 mtorr의 산소분압으로 증착한 rhombohedral 구조를 갖는 LSMO 박막을 증착하고 그 위에 PZT 물질을 증착한 결과 LSMO, PZT en 물질 모두 단일상으로 [111]방향으로서의 성장하였음을 알 수 있었다. AFM(atomic force micrscope) data 및 SEM(scanning electron microscope) data를 바탕으로 매우 균질한 박막을 얻었음을 알 수 있었으며, 이때의 자기적 성질 및 전기적 성질은 각각 강자성적인 성질 및 강유전체적인 성향을 나타내었다. 이러한 결과를 가지고 박막증착에 있어서 서로간의 결정구조가 미치는 영향과 다른 경향에 대한 조절이 가능함을 알 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1771-1773
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• 1999

Ferroelectric PZT(10/90)/(90/10)heterolayered thin films were fabricated by the alkoxide-based Sol-Gel method Electric and dielectric properties of PZT(10/90)/(90/10) heterolayered thin films have been investigated, focusing on the effect of PZT/PZT and PZT/electrode interface on the heterolayered films. Dielectric constant increased with increasing the number of coatings. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered thin films deposited on Pt/Ti/$SiO_2$/Si were $7.18{\mu}C/cm$, $68.5kV/cm^2$, respectively. Leakage current, densities were increased with increasing the number of coatings, and the value of the PZT-4 film deposited on the Pt/Ti/$SiO_2$/Si substrate was about $7{\times}10^{-8}A/cm^2$ at 0.05MV/cm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.740-742
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• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.51-54
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• 2000

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin films were prepared on Pt/Ti/SiO$_2$/Si substrate by RF magnetron sputtering method. We investigated effect of deposition conditions (especially RF input power) on structural properties of BST thin films. Deposit conditions of BST films were set working gas ratio, Ar:O$_2$= 70 : 30, working pressure 10mTorr, and RF input power 25W, 50W, 75W and 100W. Post-annealing using rapid thermal annealing(RTA) performed at 45$0^{\circ}C$, 55$0^{\circ}C$, $650^{\circ}C$, and 75$0^{\circ}C$ in oxigen ambient for 60 sec, respectively. The structural properties of BST films on Pt/Ti/SiO$_2$/Si substrate analysed by X-ray diffraction(XRD).).).