• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1077-1082
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• 2008

To fabricate a multi-layered piezoelectrics/electrodes structure, the piezoelectrics should be sintered at the temperature lower than $950^{\circ}C$ to use the silver electrode, which is cheaper than the electrodes containing noble metals such as Pd and Pt. Therefore, in this study, we modified the composition of $Pb(Zr,Ti)O_3$-based material as $(Pb_{0.98}Cd_{0.02})(Ni_{1/3}Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}O_3$ to lower the sintering temperature and to improve the piezoelectric properties. Small amount of $MnCO_3$, $SiO_2$, and $Pb_3O_4$ were also added to lower the sintering temperature of the ceramic. The prepared raw powders were mixed by using a ball mill for 24 hours. And then the mixed powders were calcinated for 2 hours at $800^{\circ}C$. The calcinated powders were again crushed with the ball mill for 72 hours. The final powders were pressed for making the shape of ${\emptyset}15\;mm$ disk. The disk-type samples were sintered at temperature range of $850{\sim}950^{\circ}C$. The crystal phases of the sintered specimens were perovskite structure without secondary phases. All of the measured electrical properties such as electromechanical coupling coefficients ($k_p$), mechanical quality factors ($Q_m$), and piezoelectric charge constants ($d_{33}$) were decreased with decreasing the sintering temperatures. The electrical properties measured at the sample sintered at $950^{\circ}C$ were 54% of $k_p$, 503 of $Q_m$, and 390 pC/N of $d_{33}$, respectively. These properties were considered to be fairly good for the application of multi-layered piezoelectric generators or actuators.

• Transactions on Electrical and Electronic Materials
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• v.4 no.2
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• pp.20-23
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• 2003

Piezoelectric powder with the composition of PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3/)O$_3$ and small particle size of 0.3 $\mu\textrm{m}$ was investigated for low-temperature firing of PZT thick films. PbTiO$_3$-PbZrO$_3$-Pb(Mn$\_$1/3/Nb$\_$2/3)O$_3$ ceramics showed dense microstructure and superior piezoelectric properties, electromechanical coupling factor (k$\_$p/) of 0.501 and piezoelectric constant (d$\_$33/) of 224. The PZT paste was made of the powder and organic vehicles, and screen-printed on Pt(450nm)/YSZ(110nm)/SiO$_2$(300nm)/Si substrates and fired at 800∼900$^{\circ}C$. Any interface reaction between the PZT thick film and the bottom electrode was not observed in the PZT thick films. The PZT thick film fired at 800$^{\circ}C$ showed moderate electrical properties, the remanent polarization(p$\_$r/) of 16.0 ${\mu}$C/$\textrm{cm}^2$, the coercive field(E$\_$c/) of 36.7 ㎸/cm, and dielectric constant ($\varepsilon$$\_$r/) of 531. Low-temperature sinterable piezoelectric composition and high activity of fine particles reduced the sintering temperature of the thick film. This PZT thick film could be utilized for piezoelectric microactuators or microsensors that require Si micromachining technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.965-968
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• 2004

Effective transverse Piezoelectric Coefficients $(e_{31,f})$ of thick PZT $(Pb(Zr_{0.52}Ti{0.48}Ti_{0.48})O_3)$ films on $SiN_x/Si$ substrates were measured with PZT thicknesses and top electrode dimensions. $e_{31,f}$ is one of important Parameters characterizing Piezoelectricity of PZT films. Thick PZT films have been used as various sensors and actuators because of their high driving force and high breakdown voltage. Thick PZT films were fabricated on Pt/Ta/$SiN_x$/Si substrates using sol-gel method. Thicknesses of PZT films were $1{\mu}m$ and $1.8{\mu}m$. $|e_{31,f}|$ values of $1.8{\mu}m$-thick-PZT films were higher than those of $1{\mu}$-thick-PZT films. Maximum $|e_{31,f}|$ of $1.8{\mu}$-thick-PZT films was about $50^{\circ}C/m^2$.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.241-245
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• 2007

[ $(Ba_{0.9-x}Sr_xCa_{0.10})TiO_3$ ] (x=0.33, 0.36) powders were prepared by sol-gel method. $(Ba,Sr,Ca)TiO_3$(BSCT) thick films, undoped and doped with $MnCO_3$ and $Yb_2O_3(0.1{\sim}0.7mol%)$, were fabricated by the screen printing method on the alumina substrate. The coating and drying procedure was repeated 6-times. The Pt bottom electrode was screen printing method on the alumina substrate. These BSCT thick films were annealed at $1420^{\circ}C$ for 2 hr in atmosphere. The upper electrodes were fabricated by screen printing the Ag paste and then firing at $590^{\circ}C$ for 10 min. And then the structured and dielectric properties as a function of the doping amount of $Yb_2O_3$ were studied. As a result of the TG-DTA, exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films showed XRD patterns of typical cubic peroveskite structure. The average thickness of BSCT thick films was about $70^{\mu}m$. The curie temperature and the dielectric constant decreased with increasing $Yb_2O_3$ doped content and the relative dielectric constant of the specimen, doped with 0.5 mol% $Yb_2O_3$ at BSCT(54/36/10), showed a best value of 5018 at curie temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.186-189
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• 2003

The role of excess Pb about the crystallization behavior and electrical properties in b(Zr$\sub$0.52/Ti$\sub$0.48/)O3(PZT) thin films has not been precisely defined. In this work, the effect of excess Pb content on the ferroelectric properties of these films was investigated. To analyze the effect, PZT films containing various amounts of excess Pb were Prepared. PZT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (111) and no pyrochlore phase was observed. As higher excess Pb was included, the films showed that value of leakage current shift from 2.03${\times}$10$\^$-6/ to 6.63 ${\times}$ 10$\^$-8/A/cm$^2$ at 100kV/cm, and value of remanent polarization shift from 8.587 ${\mu}$C /cm$^2$ to 4.256 ${\mu}$C/ cm$^2$. Electrical properties of PZT thin film affected by Pb excess content of target were explained to be caused of defect among space charges and defect grain boundaries.

• Korean Journal of Materials Research
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• v.20 no.9
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• pp.483-487
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• 2010

To fabricate $TiO_2$ nanoparticle-based dye sensitized solar cells (DSSCs) at a low-temperature, DSSCs were fabricated using hydropolymer and ZnO nanoparticles composites for the electron transport layer around a low-temperature ($200^{\circ}C$). ZnO nanoparticle with 20 nm and 60 nm diameter were used and Pt was deposited as a counter electrode on ITO/glass using an RF magnetron sputtering. We investigate the effect of ZnO nanoparticle concentration in hydropolymer and ZnO nanoparticle solution on the photoconversion performance of the low temperature fabricated ($200^{\circ}C$) DSSCs. Using cis-bis(isothiocyanato)bis(2,20 bipyridy1-4,40 dicarboxylato) ruthenium (II) bis-tetrabutylammonium (N719) dye as a sensitizer, the corresponding device performance and photo-physical characteristics are investigated through conventional physical characterization techniques. The effect of thickness of the ZnO photoelectrode and the morphology of the ZnO nanoparticles with the variations of hydropolymer to ZnO ratio on the photoconversion performance are also investigated. The morphology of the ZnO layer after sintering was examined using a field emission scanning electron microscope (FE-SEM). 60 nm ZnO nanoparticle DSSCs showed an incident photon-to-current conversion efficiency (IPCE) value of about 7% higher than that of 20 nm ZnO nanoparticle DSSCs. The maximum parameters of the short circuit current density ($J_{sc}$), the open circuit potential ($V_{oc}$), fill factor (ff), and efficiency ($\eta$) in the 60 nm ZnO nanoparticle-based DSSC devices were 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.353-353
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• 2014

본 연구에서는 Sputter를 이용하여 Room Temp.에서 증착된 NbOx 박막의 열처리에 따른 결정도를 분석하고, 이러한 결정도의 변화가 Metal Insulator Transition특성에 의한 Threshold switching에 어떠한 영향을 미치는 지에 대하여 연구하였다. NbOx 박막의 threshold switching 특성 분석을 위해, 1.4um의 TiN 위에 15nm의 NbOx를 증착하고 Top Electrode로 Pt를 증착하여 측정하였다. 증착된 NbOx는 Nb metal target으로 Reactive Sputter를 이용하여 Room Temp.에서 증착하였으며, 조성은 Partial Oxygen Pressure를 이용하여 조절하였다. 증착된 박막의 결정도는 TEM 및 XRD를 통하여 분석하였고 조성은 XPS를 이용하여 분석하였다. Sputter로 NbOx 증착 시 Partial Oxygen Pressure에 따른 조성을 XPS로 확인한 결과, Partial Oxygen Pressure 2%에서 NbOx의 조성을, 5%이상일 경우, Nb2O5의 조성을 가지는 것으로 확인되었다. Partial Oxygen Pressure 2%에서 증착한 NbOx 박막의 열처리에 따른 결정도를 분석한 결과, As-Dep상태에서는 amorphous상태였다가 600'C이상으로 1분간 열처리를 하였을 때 NbOx의 결정도가 증가함을 확인하였다. I-V 특성 측정 결과, 열처리 온도가 증가함에 따라 initial current가 점진적으로 증가하는 경향을 보이는데, 이는 열처리 시 amorphous상에서 poly-crystalline으로 미세구조의 변화가 일어나면서 grain boundary가 생성되며 생성된 grain boundary를 통해 leakage current가 증가하는 것으로 추측된다. 또한, 결정도가 증가함에 따라 electro-forming voltage가 감소하는 경향을 보이며 안정된 threshold switching 특성을 보이고 있다. 특히, 700'C 1분간 열처리 시에는 electro-forming 과정이 없이 threshold switching이 나타나는 현상이 관찰되었다. 이로 미루어 보아, threshold switching에서 나타나는 forming 현상은 local joule heating에 의해 박막이 결정화 되는 과정으로 추측된다. 결론적으로, 박막의 결정도가 initial current 및 Threshold switching 특성에 큰 영향을 미치는 것으로 예상된다.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.235-240
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• 2010

We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.161-171
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• 1997

Anodic regeneration of PCB enchant and cathodic deposition of copper using electrochemical method has been studied. Cu(I)/Cu(II) concentration ratio as a function of Cu(I) oxidation at the anode was measured from the potential difference between platinum and Ag/AgCl/4M KCl electrodes. Chlorine gas evolution was minimized by maintaining Cu(I) concentration above a specific concentration and using non-porous graphite electrode. Dendritic copper deposition was observed at the cathode and the optimum conditions for Cu deposition was identified as the current density of $360mA/cm^2$, and copper concentration of 12 g/l. Titanium was the most effective cathode material which showed a higher current efficiency and copper recovery. The current efficiency decreased with increasing temperature, but the highest power efficiency was achieved at $50^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.8-15
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• 2007

In this paper, we fabricated the field emitter display using oxidized porous polysilicon(OPPS). Their field emission characteristics and the brightness were investigated for each pixel. The OPPS emitter was operated to each pixel using passive matrix for application of large panel display. We set up the proper thickness and width of upper electrode. The fine structure of OPPS was analyzed and the field emission characteristics of each pixel were investigated. As a result of field emission characteristics of different upper electrode thickness and width, we confirmed that the most efficient thickness was 2nm/7nm and increased the emission efficiency over the width of 2.5 mm. Even if field emission characteristics of each pixel was a little different but we confirmed the same leakage current and emission current, emission efficiency at each pixel. The leakage current and emission current was decreased according to the time increases but all of each pixel were uniformly decreased. We confirmed that the brightness of each pixel was not different and the brightness of OPPS field emitter was 700 cd/m2 at the Vps=20 V. Accordingly, the patterned OPPS field emitter can be applied to high quality field emission display devices.