Electrical Characteristics of PZT Thin film Deposited by Rf-magnetron Sputtering as Pb Excess Content of Target |
Lee, Kyu-Il
(성균관대학교 전기전자 및 컴퓨터공학과)
Kang, Hyun-Il (성균관대학교 전기전자 및 컴퓨터공학과) Park, Young (성균관대학교 전기전자 및 컴퓨터공학과) Park, Ki-Yub (부산정보대학 전기전자공학과) Song, Joon-Tae (성균관대학교 전기전자 및 컴퓨터공학과) |
1 |
Analysis of sputter process on a new ZrTi + PBO target system and its application to low - temperature deposition of ferroelectric Pb(Zr,Ti)O₃films
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2 |
The effect of excess Pb content on the crystallization and electrical properties in sol-gel derived <TEX>$Pb(Zr_{0.4}Ti_{0.6})O_3$</TEX> thin films
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DOI ScienceOn |
3 |
FRAM 응용을 위한 강유전체 박막의 형성 기술
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과학기술학회마을 |
4 |
Influence buffer layers and excess <TEX>$Pb/Zr^+Ti$</TEX> rations on fatigue characteristic of sol-gel derived Pb(Zr,Ti)O₃ thin film
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DOI |
5 |
강유전체 메모리 기술과 멀티미디어에의 응용
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과학기술학회마을 |
6 |
강유전체 메모리 소자의 IC 카드 응용
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과학기술학회마을 |
7 |
Effect of net PbO content on mechanical and electro mechanical properties of lead zirconate titanate ceramics
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8 |
Surface morphology of lead based thin films and their properties
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DOI |
9 |
Crystallization and ferroelectric behavior of sputter deposited PZT using a target containing excess Pb and O contents
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DOI ScienceOn |